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    RQA0009TXDQS#H1 Renesas Electronics Corporation N-Channel MOSFET Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RQA0009TXDQS#H1

    MOSFET N-CH 16V 3.2A UPAK
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    RQA0009TXDQS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RQA0009TXDQS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0009TXDQS#H1 Renesas Electronics MOSFET N-CH 16V 3.2A UPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


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    PDF RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A

    RQA0009TXDQS

    Abstract: RQA0009 RQA0009TXTL-E REJ03G1520-0100
    Text: RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting


    Original
    PDF RQA0009TXDQS REJ03G1520-0100 PLZZ0004CA-A RQA0009TXDQS RQA0009 RQA0009TXTL-E REJ03G1520-0100

    RQA0009

    Abstract: 17-33 0952
    Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original
    PDF RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A RQA0009 17-33 0952

    RQA0009

    Abstract: RQA0009TXDQS RQA0009TXTL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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