MBR2030CTLG
Abstract: No abstract text available
Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBR2030CTL
MBR2030CTL
2N2222
2N6277
1N5817
MBR2030CTLG
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ss56 diode
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM520 THRU FM5100 Silicon epitaxial planer type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.283 7.2 0.260(6.6) For surface mounted applications.
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FM520
FM5100
MIL-S-19500
DO-214AB
MIL-STD-750,
300us
ss56 diode
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ss56
Abstract: No abstract text available
Text: Spec. NO.:FM520~FM5100 Issued Date:2007/12/11 Revised Date: Page NO.:1/2 Formosa MS Chip Schottky Barrier Diodes FM520 THRU FM5100 Silicon epitaxial planer type SMC Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame
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FM520
FM5100
MIL-S-19500
DO-214AB
300us
ss56
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DIN 46247 A2.8
Abstract: 32381400 semikron 32769900 semikron skkt snubber B2,8-1 DIN 46247 DIN 46330 32020200 semikron skkt 31 160 32769800 skkt 31
Text: 6 0,3$&. 7K\ULVWRU'LRGH 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 8/ UHFRJQL]HG ILOH QR ( 6RIW VWDUWHUV IRU LQGXFWLRQ PRWRUV 6(0,3$&. DQG ZLWKRXW SUHVVXUH FRQWDFW +HDW WUDQVIHU WKURXJK DOXPLQLXP R[LGH FHUDPLF LVRODWHG PHWDO EDVHSODWH
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Untitled
Abstract: No abstract text available
Text: MAXIM UM RATINGS Unit Symbol Value R e verse V o lta g e VR 70 V dc F o rw a rd C u rre n t if 150 m Adc iF M su rq e 500 m Adc Rating P eak F o rw a rd S u rg e C u rre n t BAV99LT1* CASE 318-07, STYLE 11 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic
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BAV99LT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MMBD914LT1* MAXIM UM RATINGS Rating Symbol Value Unit R e ve rse V o lta g e Vr 70 V dc F o rw a rd C u rre n t if 2 00 m Adc iF M su rq e 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W 'cC R# j a 556 -C 'W pd 300 mW 2.4 m W 'C RtfJA 417 T -W T J ' T stq
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MMBD914LT1*
OT-23
O-236AB)
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MPU231
Abstract: PROGRAMMABLE UJT MPU131 MPU232 2N6118
Text: MOTOROLA SC -CDIODES/OPTOJ- 6 3 6 7 2 5 5 M O T O R O L A SC 34 D E | b3t.7aSS Q03fllSfi DIODES/OPTO 3^C 3 8 1 5 8 *SILICO • * N T H Y R IS T O R D IE (continued) D T~ ¿S'o 7f ' ^ ' 2C6116 DIE NO. LINE SOURCE — DTL72 Device assembled from this die type are similar to the fol
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Q03fllSfi
DTL72
2C6116
2N6116
2N6117
2N6118
MPU131
MPU132
MPU133
MPU231
PROGRAMMABLE UJT
MPU232
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TLP541g
Abstract: Photo-Thyristor tlp541
Text: GaAs IRED a PHOTO-THYRISTOR X I H T A r A A A - TLP541G, 542G PROGRAMMABLE CONTROLLERS. AC-OUTPUT MODULE. SOLID STATE RELAY. The TOSHIBA TLP541G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP541G,
TLP541G
TLP542G
150mA
2500Vrms
E67349
TLP542G
-200V
Photo-Thyristor
tlp541
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P 7N 60E D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IG B T & D IODE IN T 0 -2 2 0 7.0 A @ 90CC 10 A @ 25°C 600 VOLTS S HORT C IR C U IT RATED
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Untitled
Abstract: No abstract text available
Text: rz 7 SCS-THOMSON Ä T # mwm H I * ! B Y T 3 0 -10 00 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPA BILITY . VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING SUITABLE APPLICATIO N S ■ FREE W HEELING DIODE IN CONVERTERS
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GD120DN2E3226
Abstract: BSM 50 GD120DN2E3226 BSM50GD120DN2E3226
Text: SIEMENS BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal BSM 50 GD120DN2E3226 LU Type #c
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GD120DN2E3226
E3226:
GD120DN2E3226
C67070-A2514-A67
BSM 50 GD120DN2E3226
BSM50GD120DN2E3226
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BSM 15 GB
Abstract: No abstract text available
Text: SIEMENS BSM 35 GB 120 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insulated metal base plate Type ^CE BSM 35 G B 1 2 0 D N 2 1200V 50A 1c Package Ordering Code HALF-BRIDGE 1
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C67070-A2111-A70
Insula35
SIS00026
BSM 15 GB
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1N1199A
Abstract: 1N1200A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N3670A 10-32UMF-2A 1N3670A Series
Text: Data Sheet No. PD-2.084 IN T E R N A T IO N A L R E C T IF I E R 1N 1 1 9 9 A , 1N 3 B 7 a A lion I S E R IE S I E A m p M edium P o w er Silicon R e c t if ie r Diodes Major Ratings and Characteristics @ 50 HZ @ 60 Hj Description/Features • Voltage rati ngs from 50 to 1,000 volts
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1N11S9A,
1N3670A
MIL-S-19500/260
10-32UMF-2A
1N1199A,
1N1199A
1N1200A
1N1202A
1N1203A
1N1204A
1N1205A
1N1206A
10-32UMF-2A
1N3670A Series
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Untitled
Abstract: No abstract text available
Text: ' > 3 7 Schottky Barrier Diode i — K f y i - A Diode Module O U T L IN E D IM E N S IO N S D240SC7M C ase : Modules 70V 240A ¥ • fiV F • ®<D e jc f t V l'S i/ i ffl Ü • * 5 ï ! S R f f lg • D C /D C D V .K -? • I C x X i'- • Æ fê ü
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D240SC7M
00033bÃ
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IRGMVC50UD
Abstract: No abstract text available
Text: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes
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IRGMVC50U
20kHz
IRGMVC50UD
IRGMVC50UU
O-258
4ASS452
MIL-S-19500
IRGMVC50UD
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N mosfet 100v 200A
Abstract: No abstract text available
Text: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz
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IRGMIC50U
20kHz
IRGMIC50UD
IRGMIC50UU
O-259
G-114
N mosfet 100v 200A
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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IXSK35N120AU1
O-26re
IXSK35N120AU1
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 35 GD 120DLE3224 IGBT Power Module Preliminary data • Low Loss IGBT • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120DLE3224 Ordering Code Package
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120DLE3224
120DLE3224
0ct-30-1997
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 75 GD 60 DL IGBT Power Module Target data sheet • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 60 DL VbE 600V h 100A Package
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Oct-23-1997
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Untitled
Abstract: No abstract text available
Text: Eü SGS-THOMSON BYT 261 PI V -1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPA BILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING INSULATED : Capacitance 45pF Ki A-| K2 A2 In s u la tin g v o lta g e : 2 5 0 0 V rms
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bsm 75 gd 120 dn2
Abstract: GD 150 R 1200
Text: euoec F BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67
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0ct-20-1997
GM105876
bsm 75 gd 120 dn2
GD 150 R 1200
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Untitled
Abstract: No abstract text available
Text: euoec BSM 35 GB 120 DL F IGBT Power Module Preliminary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 35 GB 120 DL 1200V 65A Package h Ordering Code HALF BRIDGE 1 Maximum Ratings
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1200Vp.
0ct-30-1997
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Untitled
Abstract: No abstract text available
Text: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM
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50N60AU1
125-C
O-264
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vqe 24 e
Abstract: vqe 24 d
Text: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70
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Oct-23-1997
vqe 24 e
vqe 24 d
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