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    RP 4170 Search Results

    RP 4170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HD6417032VF12V Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), QFP, /Tray Visit Renesas Electronics Corporation
    HD6417040AVF16V Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    HD6417040AF28V Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    HD6417034BVXW20 Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    HD6417011VX20V Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
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    RP 4170 Price and Stock

    JAE Electronics DR-PC24-1-7000

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    Mouser Electronics DR-PC24-1-7000 11,604
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    Pop Rivets RP4-170

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    RP 4170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM51

    Abstract: HM514170C HM514170CJ-7 HM514170CJ-8 HM514170CLJ-7 HM514170CLJ-8 HM51S4170C HM51S4170CJ-7 HM51S4170CJ-8 HM514170CJ7
    Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51 S 4170C are CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process


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    PDF HM514170C HM51S4170C 144-word 16-bit 4170C 16-bit. 4170C HM51 HM514170CJ-7 HM514170CJ-8 HM514170CLJ-7 HM514170CLJ-8 HM51S4170CJ-7 HM51S4170CJ-8 HM514170CJ7

    HM51

    Abstract: HM514170C HM514170CJ-7 HM514170CJ-8 HM514170CLJ-7 HM514170CLJ-8 HM51S4170C HM51S4170CJ-7 HM51S4170CJ-8 Hitachi DSA0015
    Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51 S 4170C are CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8


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    PDF HM514170C HM51S4170C 144-word 16-bit 4170C 16-bit. 4170C HM51 HM514170CJ-7 HM514170CJ-8 HM514170CLJ-7 HM514170CLJ-8 HM51S4170CJ-7 HM51S4170CJ-8 Hitachi DSA0015

    4170A

    Abstract: HM514170AJ7 HM514170AJ8 hm514170aj-7 hm514170alj8 HM514170CLJ8 HM514170ALJ7 HM514170AJ-8 HM514170ATT7 rpc series
    Text: HM51 S 4170A/AL Series HM51(S)4170C/CL Series 262,144-word x 16-bit Dynamic Random Access Memory The Hitachi HM514170A/AL, HM514170C/CL are CMOS dynamic RAM organized as 262,144word × 16-bit. HM514170A/AL, HM514170C/CL have realized higher density, higher performance


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    PDF 170A/AL 4170C/CL 144-word 16-bit HM514170A/AL, HM514170C/CL 144word 16-bit. 4170A HM514170AJ7 HM514170AJ8 hm514170aj-7 hm514170alj8 HM514170CLJ8 HM514170ALJ7 HM514170AJ-8 HM514170ATT7 rpc series

    4270d

    Abstract: Hitachi DSA00164
    Text: HM514170D, HM514270D Series HM51S4170D, HM51S4270D Series 262,144-word x 16-bit Dynamic RAM ADE-203-672A Z Rev. 1.0 Jul. 10, 1997 Description The Hitachi HM51(S)4170D Series, HM51(S)4270D Series are CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4170D Series, HM51(S)4270D Series have realized higher density, higher


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    PDF HM514170D, HM514270D HM51S4170D, HM51S4270D 144-word 16-bit ADE-203-672A 4170D 4270D Hitachi DSA00164

    4270d

    Abstract: HM51 HM514170D HM514170DJ-6 HM514270D HM51S4170D HM51S4270D Hitachi DSA0015
    Text: HM514170D, HM514270D Series HM51S4170D, HM51S4270D Series 262,144-word x 16-bit Dynamic RAM ADE-203-672 Z Preliminary Rev. 0.0 Oct. 18, 1996 Description The Hitachi HM51(S)4170D, HM51(S)4270D Series are CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4170D, HM51(S)4270D Series have realized higher density, higher performance and various


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    PDF HM514170D, HM514270D HM51S4170D, HM51S4270D 144-word 16-bit ADE-203-672 4170D, 4270D HM51 HM514170D HM514170DJ-6 HM51S4170D Hitachi DSA0015

    1794-VHSC

    Abstract: 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual
    Text: Technical Data FLEX I/O and FLEX Integra 1794 Series and 1793 Series Flexible, Inexpensive, / ; ,270 DQG )/(; ,QWHJUD70 DUH IOH[LEOH ORZFRVW PRGXODU ,2 V\VWHPV and Compact IRU GLVWULEXWHG DSSOLFDWLRQV WKDW RIIHU DOO WKH IXQFWLRQV RI ODUJHU UDFNEDVHG ,


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    PDF QWHJUD70 1794-VHSC 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual

    78xx series

    Abstract: 4747a C 4747 transistor d 364-y 79XX E3400 LA 4127 20 pin
    Text: MARC4 4-bit Microcontrollers . Programmer's Guide Table of Contents Section 1 Hardware Description . 1-1


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    1N4448

    Abstract: TR909 ericsson slic transistor D 649 E96 Series
    Text: October 1998 PBL 386 20/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 20/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in PBX,Terminal adapters and other telecommunications equipment. The PBL 386 20/1 has been optimized for low total line interface cost and a high


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    PDF 1522-PBL S-164 1N4448 TR909 ericsson slic transistor D 649 E96 Series

    SO DO CHAN IC 8873 64 pin

    Abstract: one chip tv ic 8873 intel 2816 eeprom one chip tv ic 8823 IC 8823 copy circuit Diagrams INTEL 2764 EPROM upd 2816 intel 2716 eprom lm 758 n 7841 pin DIAGRAM OF IC 7474 d flip flop
    Text: intei E2PROM FAMILY APPLICATIONS HANDBOOK BOOK II NOVEMBER 1981 In te l C o rp o ra tio n m a kes n o w a rra n ty fo r th e use o f its p ro d u c ts a n d a s s u m e s n o r e s p o n s ib ility fo r a n y e rro rs w h ic h m ay a p p e a r in th is d o c u m e n t n o r d o e s it m a k e a c o m m itm e n t to u p d a te th e in fo rm a tio n c o n ta in e d h e re in .


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    29044

    Abstract: No abstract text available
    Text: 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V ■ Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in


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    PDF 28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB 29044

    Untitled

    Abstract: No abstract text available
    Text: 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V or 5 V Read Operation ■ Very High-Performance Read — 5 V: 60 ns Access Time


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    PDF 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B x8/x16-Selectable 28F400 32-bit 28F004B 16-KB

    Untitled

    Abstract: No abstract text available
    Text: INTEL CORP {MEMORY/PLD/ in tc J L7E I> • 4fl2fal7fci D 0 f l n t , 2 WSEOBSIOIiflM' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V


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    PDF 28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB

    Untitled

    Abstract: No abstract text available
    Text: in t û l PBEyaSIOKlÄIR' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F200BX-TL, 28F200BX-BL


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    PDF 28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB

    Untitled

    Abstract: No abstract text available
    Text: P R iy if flD I iO M Ÿ in te i EXTENDED TEMPERATURE 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Extended Temperature Operation 40°C to +85°C User-Selectable 3.3V or 5V Vcc , „ , . „ User-Configurable x8 or x16 Operation 100 ns Maximum Access Time at 5V


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    PDF 28F016SA 16-MBIT 56-Lead 28F008SA 28F016SA 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: HM51W4170A/AL Series Preliminary 262,144-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION HM 51W 4170ATT/ALTT/ARR/ALRR Series The Hitachi H M 51 W 4 1 7 0A /A L are C M O S dynamic RAM organized as 262,144-word x 16-bit. H M 51W 4170A /A L have realized higher density, higher performance and various


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    PDF HM51W4170A/AL 144-Word 16-Bit 4170ATT/ALTT/ARR/ALRR 16-bit. 40-pin

    Lm338 power supply circuit

    Abstract: a338 LT338AK LM338 LM338K STEEL 10MF LM138 LT138A LT338A lm338 current regulator
    Text: LT138A/LT338A _ LM138/LM338 5 Amp Positive Adjustable Voltage Regulator F€flfTUR€S DCSCRIPTIOfl • ■ ■ ■ ■ The LT138A series of adjustable regulators provide 5 amps output current over an output voltage range of 1.2 volts to 32 volts. The internal voltage reference is


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    PDF LT138A/LT338A LM138/LM338 LT138A V-25V Lm338 power supply circuit a338 LT338AK LM338 LM338K STEEL 10MF LM138 LT338A lm338 current regulator

    IC lf 412

    Abstract: lp 121s2 Lm338 power supply circuit
    Text: LT138A/LT338A _LM 138/LM338 5 Amp Positive Adjustable Voltage Regulator DCSCfllPTlOn F C flT U R C S • ■ ■ ■ ■ Guaranteed 1% Initial Tolerance Guaranteed 0.3% Load Regulation Guaranteed 5 Amp Output Current 100% Thermal Limit Burn-in


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    PDF LT138A/LT338A 138/LM338 LT138A /LT338A IC lf 412 lp 121s2 Lm338 power supply circuit

    Application silicon bilateral switch light Dimmer

    Abstract: LM2893 equivalent se 047 equivalent 707VX-A043YUK LM1893N car amp toroidal core LM339 HOW IT WORKS plc car alarm IRF11DQ05 zener de 5.1V
    Text: LM1893/LM2893 N a t i o n a l S e m i c o n d u c t o r < ß LM1893/LM2893 Carrier-Current Transceivert General Description Carrier-current systems use the power mains to transfer in­ formation between remote locations. This bipolar carriercurrent chip performs as a power line interface for half-du­


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    PDF LM1893/LM2893 LM1893/LM2893 LM1893, 10-fold SC-17; LM1893 CE-28; LM1893) b50112M Application silicon bilateral switch light Dimmer LM2893 equivalent se 047 equivalent 707VX-A043YUK LM1893N car amp toroidal core LM339 HOW IT WORKS plc car alarm IRF11DQ05 zener de 5.1V

    ic 330 e6d

    Abstract: 330 e6d
    Text: ERICSSON $ October 1998 PBL 386 20/1 Subscriber Line Interface Circuit Key Features Description The PBL 386 20/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in PBX,Terminal adapters and other telecommunications equipment.


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    PDF 1522-PBL S-164 ic 330 e6d 330 e6d

    PD7811

    Abstract: capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210
    Text: ¿/PD78PG11 HIGH-END, 8-BIT, SIN G LE -C H IP N M 0 S m ic r o c o m p u t e r W ITH P IG G Y B A C K EPRO M W ML W NEC Electronics Inc. Description Pin Configuration The NEC /UPD78PG11 is a prototyping device used to emulate the masked-ROM //PD7811. The user can


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    PDF uPD78PG11 /UPD78PG11 //PD7811. f/PD78PG11. /PD7811. 16-bit 256-byte PD7811 capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210

    Untitled

    Abstract: No abstract text available
    Text: NJM2902 QUAD SINGLE-SUPPLY OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2902 consists o f four independent high-gain operational amplifiers that are designed for single-suppiy operation. Operation from split power supplies is also possible and the low


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    PDF NJM2902 NJM2902 NJM2902,

    UTM RESISTOR 214-0

    Abstract: Avalanche diod lm2893 161XN-A207YUK
    Text: LM1893/LM2893 N a t i o n a l S e m i c o n d u c t o r & LM1893/LM2893 Carrier-Current Transceiver G eneral Description Carrier-current system s use the pow er m ains to transfer in­ form ation between rem ote locations. This bipolar carriercurrent chip perform s as a pow er line interlace for half-du­


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    PDF LM1893/LM2893 LM1893/LM2893 CE-28; UTM RESISTOR 214-0 Avalanche diod lm2893 161XN-A207YUK

    Untitled

    Abstract: No abstract text available
    Text: H I T A C H I / LOGIC/ARRAYS/PI b7E • 44TL,203 [1024573 ■ HM51W4170A/AL S e rie s - Preliminary 262,144-Word x 16-Bit Dynamic Random A c ce s s Memory ■ DESCRIPTION HM5 J W 4170ATT/ALTT/ARR/ALRR Series The Hitachi H M 51W 4170A/AL are C M O S dynamic RAM


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    PDF HM51W4170A/AL 144-Word 16-Bit 4170ATT/ALTT/ARR/ALRR 170A/AL 16-bit. 170A/AL

    TL3020C

    Abstract: ugn3020 hall effect device TL302 TL3020 UGN3020
    Text: TL3020C SILICON HALL-EFFECT SWITCH D2903, OCTOBER 1985-REVISED APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • I o l . . . 20 mA Min at V O L ” 0 .4 V


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    PDF TL3020C D2903, 1985-REVISED UGN3020 ugn3020 hall effect device TL302 TL3020 UGN3020