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    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114 PDF

    Q2SD1733

    Abstract: 2SD1733 40498
    Text: SPICE PARAMETER 2SD1733 by ROHM TR Div. * Q2SD1733 NPN BJT model * Date: 2006/11/28 .MODEL Q2SD1733 NPN + IS=280.00E-15 + BF=199.80 + VAF=40 + IKF=4.6752 + ISE=280.00E-15 + NE=1.5882 + BR=404.98 + VAR=100 + IKR=.40942 + ISC=4.9564E-12 + NC=1.2884 + NK=.97272


    Original     		2SD1733 Q2SD1733 00E-15 9564E-12 000E-3 971E-3 85E-12 583E-12 2SD1733 40498 PDF

    2SA1576UB

    Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
    Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.


    Original     		R0039A 51P6029E 2SA1576UB 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703 PDF

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


    Original     		R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114 PDF

    2SD1758 equivalent

    Abstract: SOT-89 F inverter mpt 2SD1760 equivalent IMH3 N 2SB1181F5 equivalent
    Text: ~äi ROHM CORP DE | 7 0 2 0 1 ^ □□□1155 □ | wm • IMD Isolated Mini Mold Device Type (New Products^ (6-pin Type with 2 Independent Built-in Circuits) k - ' .F— - . ; ; - • . '••Tvnp • ' ' -f-'' . ' ' y P e : . ■ . IMB1 Inverter Driver


    OCR Scan     		DTA124EKX2 DTA144EKX2 DTA143TKX2 DTA114TKX2 DTA144 DTA14po 2SB1181 2SB1182 2SB1184 2SD1758 equivalent SOT-89 F inverter mpt 2SD1760 equivalent IMH3 N 2SB1181F5 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD MOE 5 n 7 0 2 0 = ^ 0005^45 T • RHM h*-7 > y Z. $ / I ransistors 2SD1733/2SD1733F5 T-ZZ-07 2SD1 733 0 9 ^ 4 • w i l l NPN y ‘J = l > i S J U j M ^ l f f l / L o w Freq. P ow er Amp. Epitaxial Planar NPN S ilico n Transistors 7 ^ ^ ^ ^ / w ilF S


    OCR Scan     		2SD1733/2SD1733F5 T-ZZ-07 2SB1181 2SB1181. PDF

    2SC3082K

    Abstract: BCX53 Rohm RF Transistors sot-23 RXT-A76 2SA1037KLN 2SA1455K 2SC2059K 2SC2412KLN 1100 SOT-89 2SC3802K
    Text: ROHM CORP ‘ •fi * Other Popular JapSnGSS SOT-23 Types t - F u n ctio n Type - D E |7fl2flT= H QD01D7fl 7 7 ~ - 2 .? -< ? / _ V c E O ÌV : ' Jtìim A ) - *N e w P rodu cts P c im W ) C o b p F ) . . . F ife o U n der D evelopm ent


    OCR Scan     		QG01G7Ã OT-23 2SC3082K 2SC3802K 2SC3837K 2SC3838K BCX53 Rohm RF Transistors sot-23 RXT-A76 2SA1037KLN 2SA1455K 2SC2059K 2SC2412KLN 1100 SOT-89 PDF

    2sd198

    Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
    Text: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)


    OCR Scan     		2SB1132 2S81184 2S81182 2S81189 2SB1260 2SB1181 2S81275 2SC4132 2sd198 MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zDimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1241 2SB1181 SC-62 2SD1733 2SB1181 2SD1863 SC-72 PDF

    2sd1733

    Abstract: No abstract text available
    Text: 2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE sat)


    Original     		2SD1898 2SD1733 2SB1260 2SB1181 500mA/20mA) 2SD1898 SC-62) OT-89> SC-63) 2sd1733 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE sat)


    Original     		2SB1260 2SB1181 2SD1898 2SD1733 -500mA/ -50mA) 2SB1260 SC-62) OT-89> PDF

    2SD1898

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 1.5 ±0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SB1260 2SB1241 2SB1181 2SD1898 SC-62 2SD1733 PDF

    2SD1898

    Abstract: 2SD1768 2SB1181 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 SC-72 DASF002499
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1241 2SB1181 SC-62 2SD1733 2SD1768 2SB1181 2SD1863 SC-72 DASF002499 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A PDF

    2SD1898

    Abstract: 2SD1863 B1241 D1733
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) High V ceo. V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 3) Good hFE linearity. 4) 1.6 ± 0 1 r— 1 -m Low VcE(sat).


    OCR Scan     		2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S SC-62 2SD1768S 2SD1898 2SD1863 B1241 D1733 PDF

    2SD1733

    Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1181 2SB1241 2SD1863 SC-72 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1


    OCR Scan     		2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F) PDF

    2SD1863

    Abstract: ROHM 2SD1733 2SB1181 2SB1241 2SB1260 2SD1381F 2SD1733 2SD1768S 2SD1898
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !External dimensions (Units : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1)


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F ROHM 2SD1733 2SB1181 2SB1241 2SB1260 2SD1381F PDF

    2SD1863

    Abstract: 2sd1733 2SD1898
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),


    OCR Scan     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SD1898 2SB12 /2SB1241 SC-62 PDF

    2SD1863R

    Abstract: 2SD1898 SC-72 2SB1181 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 NPN transistor 2sd1863
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Units : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SD1863R SC-72 2SB1181 2SB1241 2SD1863 NPN transistor 2sd1863 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zExternal dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1181 2SB1241 2SD1863 SC-72 PDF

    NPN Transistor VCEO 80V 100V

    Abstract: hfe 2500 PW 1.5 transistor Ic 1A datasheet Vceo 100V Ic 0.5A 2SD1863 npn transistor 100v min 2SD1898 SC-72 2SB1181
    Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 NPN Transistor VCEO 80V 100V hfe 2500 PW 1.5 transistor Ic 1A datasheet Vceo 100V Ic 0.5A 2SD1863 npn transistor 100v min SC-72 2SB1181 PDF

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27 PDF