RO4350B
Abstract: RO4350 Thermagon Rogers RO4350B 62NCLR-A Solder Paste, Indium 5.1, Type 3 RO4350 properties pcb fabrication process of multilayer pcb pcb layout computer motherboard
Text: AMMP-6408 Thermal Application Examples Application Note 5351 Introduction Typical Application The AMMP-6408 is a 1 watt power amplifier operating over the 6 to 18 GHz frequency range and is housed in a 5 x 5 mm surface mount package. The AMMP-6408 is the packaged version of Avago’s AMMC-6408 PHEMT MMIC.
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AMMP-6408
AMMP-6408
AMMC-6408
mus350
10mil
T2905C
RO4350B
RO4350
Thermagon
Rogers RO4350B
62NCLR-A
Solder Paste, Indium 5.1, Type 3
RO4350 properties
pcb fabrication process
of multilayer pcb
pcb layout computer motherboard
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RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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Rogers RO4350B
Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
Rogers RO4350B
RO4350B ROGERS
GRM155R71E103KA01
25C2625
GRM1555C1H181JZ01
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Abstract: No abstract text available
Text: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
400--scale
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RO4350B
Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Text: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
RO4350B
Rogers RO4350B microstrip
RC0402FR-07-910RL
YAGEO CHIP Capacitors MARKING
GRM1555C1H221JZ01
ERJ2GE0R00X
marking us capacitor pf l1
GRM1555C1H560JZ01
RC0402JR yageo
GRM1555C1H181JZ01
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GJM1555C1H180GB01
Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
GJM1555C1H180GB01
GRM1555C1H180JA01
C11 inductor
RC0402FR-07-1K2RL
RO4350B
Rogers RO4350B microstrip
phemt .s2p
25c2625
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MG271H
Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
OT--89
MMG20271H9T1
MMG20271H9
MG271H
marking s22
GRM1555C1H1R0BA01
mmic C5 sot 86
GRM1555C1H1R2BA01
GRM1555C1H1R8BA01
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
MMG20271H9T1
MMG20271H9
OT--89
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Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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MML20242H
Abstract: RO4350B Rogers RO4350B microstrip
Text: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
RO4350B
Rogers RO4350B microstrip
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Abstract: No abstract text available
Text: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
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MGA-61563
Abstract: Rogers 4350B RO4350B microstripline Rogers RO4350B microstrip 4350B
Text: MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies’ EpHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563
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MGA-61563
MGA-61563
powe20
5988-9183EN
AV02-0146EN
Rogers 4350B
RO4350B
microstripline
Rogers RO4350B microstrip
4350B
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TB237
Abstract: SMD 47UF/SN74AHC138
Text: August 25, 2014 TB237 Frequency=100-400MHz Pout=150W Gain=16.5dB Vds=28Vdc Idq=0.4A Efficiency=52-58% LR2501 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com August 25, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012
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TB237
100-400MHz
28Vdc
LR2501
PVG5A103C03R00
81-BLM21BD102SH1D
MW280SPNRD
LT3010EMS8E
LM7321MF/NOPB
UT-34-M17
TB237
SMD 47UF/SN74AHC138
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MGA-61563
Abstract: RO4350B 4350B Rogers RO4350B microstrip
Text: Agilent MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Agilent’s E-pHEMT process and is targeted for commercial wireless application from 100
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MGA-61563
MGA-61563
MGA61563
5988-9183EN
RO4350B
4350B
Rogers RO4350B microstrip
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MGA-62563
Abstract: microstripline FR4 RO4350B 4350B 62563 62563 amplifier MGA-6x563 Rogers 4350B LL1608-FS47NJ LL1608-FS4N7S
Text: MGA-62563 High Performance GaAs MMIC Amplifier Application Note 5011 Application Information The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 3 GHz. The MGA-62563
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MGA-62563
MGA-62563
pow-20
MGA-62563.
5988-9187EN
AV01-0307EN
microstripline FR4
RO4350B
4350B
62563
62563 amplifier
MGA-6x563
Rogers 4350B
LL1608-FS47NJ
LL1608-FS4N7S
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Rogers RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage
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MMZ25333B
MMZ25333B
MMZ25333BT1
8/2014Semiconductor,
Rogers RO4350B
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RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
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TB235
Abstract: No abstract text available
Text: Juune 11, 20144 T TF235 Frequenccy=30-5122 MHz Pout=100W Gain= = 19-21.5 dB Vd ds=28Vdc Id dq=1.2A Efficiency= 48-551% L LR2401 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m June 11, 2014 180.0 22.5 135.0
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TF235
28Vdc
LR2401
TB235
28Vdc,
TCJE106M063R0100
EE-TK1V470P
100r18x335KV4E
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MTL ICC 317
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage
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MMZ25333B
MMZ25333B
MMZ25333BT1
6/2014Semiconductor,
MTL ICC 317
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TB242
Abstract: 111X103KW500 RO4350B
Text: December 18, 2014 TB242 Frequency=1-3GHz Pout=10W Gain=10dB Vds=48Vdc Idq=50mA Efficiency avg. =35% GP1441 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com December 18, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012
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TB242
48Vdc
GP1441
1111X
470uF
R04350B
30mil
0505C101FW301
0505C1R0AW301
0505C0R4AW301
TB242
111X103KW500
RO4350B
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20S015N Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
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AFT20S015N
AFT20S015NR1
AFT20S015GNR1
AFT20S015NR1
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RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
500ating
8/2013Semiconductor,
RO4350B
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Untitled
Abstract: No abstract text available
Text: Document Number: MML09231H Rev. 0, 5/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09231HT1 Low Noise Amplifier The MML09231H is a single−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is
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MML09231H
MML09231HT1
MML09231H
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j350 TRANSISTOR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
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MHT1006N
MHT1006NT1
j350 TRANSISTOR
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