Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RO4350B MAX CURRENT Search Results

    RO4350B MAX CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    RO4350B MAX CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML09212H MML09212HT1 MML09212H 400--scale

    Rogers RO4350B

    Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
    Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML09212H MML09212HT1 Rogers RO4350B RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01

    RO4350B

    Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
    Text: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML09212H MML09212HT1 MML09212H RO4350B Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01

    GJM1555C1H180GB01

    Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
    Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML20242H MML20242HT1 GJM1555C1H180GB01 GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625

    MG271H

    Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
    Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low


    Original     		PDF MMG20271H9 OT--89 MMG20271H9T1 MMG20271H9 MG271H marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low


    Original     		PDF MMG20271H9 MMG20271H9T1 MMG20271H9 OT--89

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101


    Original     		PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs

    MML20242H

    Abstract: RO4350B Rogers RO4350B microstrip
    Text: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML20242H MML20242HT1 MML20242H RO4350B Rogers RO4350B microstrip

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML20242H MML20242HT1 MML20242H

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-190+ DC to 190 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size


    Original     		PDF LFCN-190+ -55oC 100oC FV1206 2002/95/EC) RO4350B M112848

    Untitled

    Abstract: No abstract text available
    Text: Ceramic LFCN-4400+ LFCN-4400 Low Pass Filter 50Ω DC to 4400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-4400+ LFCN-4400 -55oC 100oC FV1206 LFCN-4400 2002/95/EC)

    LFCN 7200

    Abstract: LFCN-7200
    Text: Ceramic Low Pass Filter 50Ω LFCN-7200+ DC to 7200 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-7200+ -55oC 100oC FV1206 LFCN-7200D+ 2002/95/EC) RO4350B LFCN 7200 LFCN-7200

    LFCN-160

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-160+ DC to 160 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size


    Original     		PDF LFCN-160+ -55oC 100oC FV1206 2002/95/EC) RO4350B M112848 LFCN-160

    Untitled

    Abstract: No abstract text available
    Text: Ceramic LFCN-180+ LFCN-180 Low Pass Filter 50Ω DC to 180 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-180+ LFCN-180 -55oC 100oC FV1206 LFCN-180 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: Ceramic LFCN-180+ LFCN-180 Low Pass Filter 50Ω DC to 180 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-180+ LFCN-180 -55oC 100oC FV1206 LFCN-180 2002/95/EC)

    IFR 2525

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-3400+ DC to 3400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-3400+ -55oC 100oC FV1206 LFCN-3400D+ 2002/95/EC) RO4350B IFR 2525

    LFCN-5500

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-5500+ DC to 5500 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-5500+ -55oC 100oC FV1206 LFCN-5500D+ 2002/95/EC) RO4350B LFCN-5500

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-5850+ DC to 5850 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-5850+ -55oC 100oC FV1206 LFCN-5850D+ 2002/95/EC) RO4350B

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-3400+ DC to 3400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-3400+ -55oC 100oC FV1206 LFCN-3400D+ 2002/95/EC) RO4350B

    LFCN-190

    Abstract: tb 6550
    Text: Ceramic Low Pass Filter 50Ω LFCN-190+ DC to 190 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size


    Original     		PDF LFCN-190+ -55oC 100oC FV1206 2002/95/EC) RO4350B M121640 LFCN-190 tb 6550

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-6400+ DC to 6400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-6400+ -55oC 100oC FV1206 2002/95/EC) RO4350B M112848

    Untitled

    Abstract: No abstract text available
    Text: Ceramic LFCN-4400+ LFCN-4400 Low Pass Filter 50Ω DC to 4400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-4400+ LFCN-4400 -55oC 100oC FV1206 LFCN-4400D+

    lfcn-6400

    Abstract: LFCN 6400
    Text: Ceramic Low Pass Filter 50Ω LFCN-6400+ DC to 6400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-6400+ -55oC 100oC FV1206 LFCN-6400D+ 2002/95/EC) RO4350B lfcn-6400 LFCN 6400

    LFCN-5850

    Abstract: No abstract text available
    Text: Ceramic Low Pass Filter 50Ω LFCN-5850+ DC to 5850 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W


    Original     		PDF LFCN-5850+ -55oC 100oC FV1206 2002/95/EC) RO4350B M112848 LFCN-5850