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    RN30 Price and Stock

    Bourns Inc SRN3015-2R2M

    FIXED IND 2.2UH 1.8A 72 MOHM SMD
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    DigiKey SRN3015-2R2M Reel 640,000 2,000
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    Avnet Americas SRN3015-2R2M Reel 6,000 16 Weeks 2,000
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    • 10000 $0.15558
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    New Advantage Corporation SRN3015-2R2M 22,000 1
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    • 10000 $0.2444
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    Bourns Inc SRN3015-6R8M

    FIXED IND 6.8UH 1.1A 211MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SRN3015-6R8M Reel 14,000 2,000
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    SRN3015-6R8M Cut Tape 1,474 1
    • 1 $0.44
    • 10 $0.375
    • 100 $0.278
    • 1000 $0.1999
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    New Advantage Corporation SRN3015-6R8M 8,000 1
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    Bourns Inc SRN3015C-4R7M

    IND,3X3X1.3MM,4.7UH20%,1.9A,SHD
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    DigiKey SRN3015C-4R7M Reel 12,000 2,000
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    SRN3015C-4R7M Cut Tape 3,902 1
    • 1 $0.4
    • 10 $0.347
    • 100 $0.2571
    • 1000 $0.18487
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    TTI SRN3015C-4R7M Reel 4,000 2,000
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    Bourns Inc SRN3010BTA-150M

    FIXED IND 15UH 900MA 0.678OHM SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SRN3010BTA-150M Reel 3,000 3,000
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    Avnet Americas SRN3010BTA-150M Reel 10 Weeks 3,000
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    Master Electronics SRN3010BTA-150M
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    Bourns Inc SRN3010BTA-1R5M

    FIXED IND 1.5UH 2.8A 0.09OHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SRN3010BTA-1R5M Reel 3,000 3,000
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    Master Electronics SRN3010BTA-1R5M
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    Find more RN30 price and stock on Findchips.com

    RN30 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RN300-100 Unknown Shortform Power Data Book Short Form PDF
    RN-300-2 Essentra Components Catalog Card Guides, Boxes, Enclosures, Racks, CARD GUIDE NARROW NAT 3" Original PDF
    RN3010 Amplifonix RF AMPLIFIER Original PDF
    RN3020 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    RN3020R Unknown Discontinued Transistor Data Book 1975 Scan PDF
    RN3030 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    RN3030R Unknown Discontinued Transistor Data Book 1975 Scan PDF
    RN3034B80W Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Scan PDF

    RN30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TR3093

    Abstract: SM19
    Text: RF AMPLIFIER MODEL TR3093 Available as: TR3093, 4 Pin TO-8B T8 RN3093, 4 Pin Surface Mount (SM19) BR3093, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! Higher Output Power: 1 Watt Typical ! Operating Temp. - 55 ºC to +85 ºC


    Original     		PDF TR3093 TR3093, RN3093, BR3093, TR3093 SM19

    Untitled

    Abstract: No abstract text available
    Text: RN3030R Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


    Original     		PDF RN3030R

    Untitled

    Abstract: No abstract text available
    Text: RN3004 / RN3004 Amplifier Performance Datasheet Cross Reference Guide RN3004 / RN3004* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 225.0 - 400.0 MHz Gain 22.8 dB Typical 22.0 dB Min Noise Figure 1.8 dB Typical


    Original     		PDF RN3004 SRN3004*

    BX3010

    Abstract: RN3010 SM19 TR3010
    Text: RF AMPLIFIER MODEL Available as: TR3010, 4 Pin TO-8B T8 RN3010, 4 Pin Surface Mount (SM19) BX3010, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Environmental Screening Available Second Order Harmonic Intercept Point . +


    Original     		PDF TR3010, RN3010, BX3010, TRC431 BX3010 RN3010 SM19 TR3010

    TR3070

    Abstract: BR307 SM19 RN3070
    Text: RF AMPLIFIER MODEL TR3070 Available as: TR3070, 4 Pin TO-8B T8 RN3070, 4 Pin Surface Mount (SM19) BR3070, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)


    Original     		PDF TR3070 TR3070, RN3070, BR3070, TR3070 BR307 SM19 RN3070

    TR3054

    Abstract: SM19
    Text: RF AMPLIFIER MODEL TR3054 Available as: Typical Intermodulation Performance at 25 º C Features ! ! ! ! TR3054, 4 Pin TO-8B T8 RN3054, 4 Pin Surface Mount (SM19) BR3054, Connectorized Housing (H2) Second Order Harmonic Intercept Point.+35 dBm (Typ.)


    Original     		PDF TR3054 TR3054, RN3054, BR3054, TR3054 SM19

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TR3093 Available as: TR3093, 4 Pin TO-8B T8 RN3093, 4 Pin Surface Mount (SM19) BR3093, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C  Higher Output Power: 1 Watt Typical  Operating Temp. - 55 ºC to +85 ºC


    Original     		PDF TR3093 TR3093, RN3093, BR3093,

    low noise

    Abstract: TR3044 transistor oc 76 150-1 SM19
    Text: RF AMPLIFIER MODEL TR3044 Available as: TR3044, 4 Pin TO-8B T8 RN3044, 4 Pin Surface Mount (SM19) BR3044, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)


    Original     		PDF TR3044 TR3044, RN3044, BR3044, low noise TR3044 transistor oc 76 150-1 SM19

    TR3020

    Abstract: RN3020 SM19 BR3020
    Text: RF AMPLIFIER MODEL TR3020 Available as: TR3020, 4 Pin TO-8B T8 RN3020, Surface Mount (SM19) BR3020, Connectorized Housings (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +45 dBm (Typ.) Second Order Two Tone Intercept Point . +42 dBm (Typ.)


    Original     		PDF TR3020 TR3020, RN3020, BR3020, TR3020 RN3020 SM19 BR3020

    Untitled

    Abstract: No abstract text available
    Text: Cross Reference Guide RN3010 / RN3010* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 30.0 dB Typical 28.0 dB Min Noise Figure 3.5 dB Typical 5.0 dB Max P1dB 21.5 dBm Typical 20.0 dBm Min


    Original     		PDF RN3010 SRN3010*

    Untitled

    Abstract: No abstract text available
    Text: RN3045 / RN3045 Amplifier Performance Datasheet Cross Reference Guide RN3045 / RN3045* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 125.0 MHz Gain 15.0 dB Typical 14.0 dB Min Noise Figure 2.0 dB Typical


    Original     		PDF RN3045 SRN3045*

    Untitled

    Abstract: No abstract text available
    Text: RN3039 / RN3039 Amplifier Performance Datasheet Cross Reference Guide RN3039 / RN3039* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 100.0 - 220.0 MHz Gain 18.0 dB Typical 17.5 dB Min Noise Figure 2.5 dB Typical


    Original     		PDF RN3039 SRN3039*

    Untitled

    Abstract: No abstract text available
    Text: RN3030 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


    Original     		PDF RN3030

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TR3070 Available as: TR3070, 4 Pin TO-8B T8 RN3070, 4 Pin Surface Mount (SM19) BR3070, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)


    Original     		PDF TR3070 TR3070, RN3070, BR3070,

    MAX232 G4

    Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
    Text: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9


    Original     		PDF MPC555 TP102 TP103 CB100 TP100 TP101 CO101 MAX232-6 MAX232-2 MAX232-13 MAX232 G4 IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729

    OSC4/SM

    Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
    Text: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user


    Original     		PDF LatticeXP2-17 24-6R8 OSC4/SM MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5

    TR3069

    Abstract: TR306 to8b SM19
    Text: RF AMPLIFIER MODEL TR3069 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +46 dBm Typ. Second Order Two Tone Intercept Point . +41 dBm (Typ.) Third Order Two Tone Intercept Point . +31 dBm (Typ.)


    Original     		PDF TR3069 TR3069, RN3069, BR3069, TR3069 TR306 to8b SM19

    Untitled

    Abstract: No abstract text available
    Text: Available as: RF AMPLIFIER MODEL TR3029 TR3029, 4 Pin TO-8 T4 RN3029, 10 Lead Gull-Wing (SG4) BR3029, Connectorized Housing (H2) Features Typical Intermodulation Performance at 250 C • ■ ■ ■ Second Order Harmonic Intercept Point +46 (Min.) Second Order Two Tone Intercept Point


    OCR Scan     		PDF TR3029 TR3029, RN3029, BR3029,

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor RN3034B80W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse application up to 100 |j.s pulse width, 10% duty factor. Microwave performance up to Tmb = 25 °C in a common base class C


    OCR Scan     		PDF RN3034B80W 711002b

    RN3034B80W

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor RN3034B80W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse application up to 100 |j.s pulse width, 10% duty factor. Microwave performance up to Tmb = 25 °C in a common base class C


    OCR Scan     		PDF RN3034B80W 711DflEb RN3034B80W

    RM250-100

    Abstract: TG150-50 RJ150-50 TT40-50 RE100-100 rf125-100 TC250-50 DM250P F1E6 TA150-50
    Text: Device D10P DM10P DM30P DM50P D100P DM100P DM 150 PA DM150PB DM250P 0912-70 0912-100 0912-200 CD2147 Device L7-28 LM25-28 LM150PX TABLE J Power Gain dB Coll. Eff. <Typ°o) Power Diss. (Watts) 10.0 10.0 30.0 50.0 100.0 100.0 140.0 140.0 280.0 70.0 100.0 200.0


    OCR Scan     		PDF DM10P DM30P DM50P D100P DM100P DM150PB DM250P CD2147 TA150-50 TB200-50 RM250-100 TG150-50 RJ150-50 TT40-50 RE100-100 rf125-100 TC250-50 F1E6

    BN301

    Abstract: ara3
    Text: C INTERFACE INC IDE D | 00233A3 0D0045M A | BN301 ^ Iam ey. T - W - U STANLEY INFRARED LED i Package Dimensions • FEATURES 1 High emission output (Typ. 7mW /sr at I f = 20m A ) (2) High directivity type (3) Low cost, High efficient by use o f clear epoxy package o f lens dia 5 mm


    OCR Scan     		PDF 00233A3 0D0045M BN301 100ms T-41-11 BN301 ara3

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B