Untitled
Abstract: No abstract text available
Text: RN152G Diodes PIN diode Silicon Epitaxial Planer RN152G z Applications High frequency switching z Land size figure (Unit : mm) z External dimensions (Unit : mm) 0.13±0.03 0.6±0.05 0.5 1.2 1.0±0.05 z Features 1) Ultra small mold type. (VMD2) 2) High frequency resistance which
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RN152G
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RN152G
Abstract: No abstract text available
Text: RN152G Diodes PIN diode Silicon Epitaxial Planer RN152G z Applications High frequency switching z Land size figure (Unit : mm) z External dimensions (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.4±0.05 1.0±0.05 1.2 z Features 1) Ultra small mold type. (VMD2)
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RN152G
RN152G
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Untitled
Abstract: No abstract text available
Text: RN152G Diodes PIN diode Silicon Epitaxial Planer RN152G z Land size figure (Unit : mm) z External dimensions (Unit : mm) z Applications High frequency switching 0.13±0.03 0.8±0.05 CATHODE MARK 0.45 0.5 0～0.1 0.45 z Features 1) Ultra small mold type. (VMD2)
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RN152G
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VMD2
Abstract: RN242CS VMN2
Text: Low Capacitance / Low Forward Resistance PIN Diodes Sub-miniature Excellent high-frequency charac ristics Surface mount package VMN2 1006 IF-Rf f=900MHz 3.5 RN141G/S RN152G 3 RN142G/S RN242CS Rf (Ω) 2.5 VMN2 VMD2 2 n External Dimensions 1.5 1 0.5 2 4 6
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900MHz
RN141G/S
RN152G
RN142G/S
RN242CS
VMD2
RN242CS
VMN2
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RN152G
Abstract: No abstract text available
Text: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN152G No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI
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29-Sep-06
RN152G
228E-20
201E-13
000E-08
760E-07
RN152G
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Untitled
Abstract: No abstract text available
Text: RN152G Diodes PIN diode Silicon Epitaxial Planer RN152G z Applications High frequency switching z Land size figure (Unit : mm) z External dimensions (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.4±0.05 1.0±0.05 1.2 z Features 1) Ultra small mold type. (VMD2)
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RN152G
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Untitled
Abstract: No abstract text available
Text: Low Capacitance / Low Forward Resistance PIN Diodes Unit VR 60 V DC forward current IF 100 mA Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C Electrical Characteristics Ta=25°C Item Symbol Condition Standard VF IF=10mA 1.0V MAX. VR=60V
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RN142G/S
RN242CS
100MHz
35pFMAX.
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VMD2
Abstract: dimensions VMD2 RN242
Text: For Antenna switch : PIN Diode RN2 Series Features Features Packages Packages Employment of new wafer process resulted in significant improvement of High-frequency characteristics ! Outline Dimensions Capacitance pF VR=0V 0.6 0.45 0.6 0.55 0.125 0.35
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RN252
RN152
RN142
RN141
RN242
RN242CS
RN262G
RN262CS
RN142G
RN141G
VMD2
dimensions VMD2
RN242
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block diagram of schottky diode
Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
Text: -Diodes Schottky Barrier Diodes RSX Series Surface Mount / Thin-profile Power Package PMDT Package 2616 Size / Two-pin Mini-mold Schottky PMDU Package Sub-miniature Zener Diodes 2 terminals / composite Zener Diodes USB2.0 Compatible / High Reliability Zener Diodes
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RR264M-400
RB491D
A/20V)
RSX101M-30
A/30V)
47P4871E
block diagram of schottky diode
EDZ TE61 27B
H 48 zener diode
2a 200v schottky diode
DC DC converter 5v to 400V
10W zener diode
Bidirectional Zener Diode Glass 15v
Schottky rectifier 3A
EDZ te61 15B
200v 3A schottky
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