RN1007
Abstract: RN1008 RN1009 RN2007 RN2009
Text: RN1007~RN1009 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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RN1007
RN1009
RN1008
RN2007
RN2009
RN1007
RN1008
RN1009
RN2009
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RN1007
Abstract: RN1008 RN1009 RN2007 RN2009
Text: RN1007~RN1009 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1007RN1009
RN1007
RN1008
RN1009
RN2007RN2009
RN1007
RN1008
SC-43
RN1009
RN2007
RN2009
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RN1007
Abstract: RN1008 RN1009 RN2007 RN2009 RN1007RN1009
Text: RN1007~RN1009 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1007RN1009
RN1007
RN1008
RN1009
RN2007RN2009
RN1007
RN1008
SC-43
RN1009
RN2007
RN2009
RN1007RN1009
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RN1008
Abstract: RN1007 RN1009 RN2007 RN2009
Text: RN1007~RN1009 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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RN1007RN1009
RN1007
RN1008
RN1009
RN2007
RN2009
RN1007
RN1008
SC-43
RN1009
RN2009
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1007~RN1009 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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Original
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RN1007RN1009
RN1007
RN1008
RN1009
RN2007
RN2009
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1007~RN1009 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN1007RN1009
RN1007
RN1008
RN1009
RN2007
RN2009
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PDF
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RN2007
Abstract: RN2009 RN1007 RN1009 RN2008
Text: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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RN2007
RN2009
RN2008
RN1007
RN1009
RN2007
RN2008
RN2009
RN1009
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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toshiba YK smd marking
Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106DAA1
12341D5AD
BDJ0097A
toshiba YK smd marking
bdj0097a
2904 SMD IC
2SC3327
VA MARKING
rn4983
smd marking Yd
XA marking
k 2968 toshiba
RN1106FV
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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RN1007
Abstract: RN1009 RN2007 RN2008 RN2009
Text: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN2007RN2009
RN2007
RN2008
RN2009
RN1007
RN1009
RN2007
RN2008
SC-43
RN1009
RN2009
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PDF
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1007-RN1009 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1007, RN1008, RN1009 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS • • • • 5.1 MAX. With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN1007-RN1009
RN1007,
RN1008,
RN1009
RN2007
RN1007
RN1008
RN101007
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A RN1007~RN1009 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1007, RN 1008, RN1009 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • . 5.1 MAX. With Built-in Bias Resistors
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OCR Scan
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RN1007
RN1009
RN1007,
RN2007
RN1008
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1007,1008,1009 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2007-2009
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OCR Scan
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RN1007
RN2007-2009
RN1008
RN1009
RN1009
RN1007
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PDF
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HN2007
Abstract: No abstract text available
Text: R N 2 0 0 7 , 2 0 0 8 , 2 0 0 9 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN1007-1009
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OCR Scan
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RN1007-1009
RN2008
RN2009
RN2007
RN2008
HN2007
HN2007
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PDF
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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OCR Scan
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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RN2226
Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package
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OCR Scan
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2SC1815
2SC1815
2SA1015
OT-23MOD.
/RN1501
VRN2501/
RN1502
RN2502
RN1503
RN2226
2sa1015 sot-23
rn4601
diode 2sa1015
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PDF
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RN1417
Abstract: rn4601
Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404
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OCR Scan
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RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN1007
RN1008
RN1009
RN1010
RN1417
rn4601
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PDF
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rr1206
Abstract: EN1602 RN10U RN1509 RN1510 RN1511 RN1601 RN1603 RN1604 RN1605
Text: - 328 - mfctìS m % tt RN1509 Pc* VcBO V m h (Ta=25‘ C,*EPIÍTc=25‘ C) , £ (V) (A) (W) (min) (max) SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 30 SW/INV/D 50 50 0.1 0.3 0.1 50 SW/INV/D 50
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RN1509
RN1510
RN1511
RN1601
EN1602
RN1603
RN1604
RN1201
RN2201
10K/10K
rr1206
RN10U
RN1605
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN2007-RN2009 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2007, RN2008, RN2009 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN2007-RN2009
RN2007,
RN2008,
RN2009
RN1007
RN1009
RN2007
RN2008
SC-43
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PDF
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