Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RMJ CE Search Results

    RMJ CE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RMJ-K-S

    Abstract: RMJ-J-R RSJ-K-R RMJ-K-R RSJ-J-S RSJ-J-R RMJ-J-S pitot sensor RMJ-T-R rsj-5
    Text: Round Hole Panel Jacks Type RSJ Standard Size Type RMJ Miniature Size FRONT MOUNT HARDWARE INCLUDED ANSI color code shown To order IEC color code see pg. A-9 ALL MODELS AVAILABLE FOR FAST DELIVERY! 22.4 mm 0.88" Dia. Cutout Free Dust Cap and Nut Included


    Original
    PDF EPG05 RMJ-K-S RMJ-J-R RSJ-K-R RMJ-K-R RSJ-J-S RSJ-J-R RMJ-J-S pitot sensor RMJ-T-R rsj-5

    Untitled

    Abstract: No abstract text available
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents DRV8801A-Q1 SLVSC79A – JUNE 2014 – REVISED SEPTEMBER 2014 DRV8801A-Q1 DMOS Full-Bridge Motor Drivers 1 Features 3 Description • • • • • • • • The DRV8801A-Q1 device provides a versatile


    Original
    PDF DRV8801A-Q1 SLVSC79A DRV8801A-Q1

    BFJ 64

    Abstract: p4sma75a
    Text: P4SMA SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features — For surface mounted application in order to optimize board space — Low profile package — Built-in strain relief — Glass passivated junction


    Original
    PDF SMA/DO-214AC 300us, P4SMA200A. BFJ 64 p4sma75a

    P4SMA10

    Abstract: P4SMA10A P4SMA11 P4SMA11A P4SMA12 P4SMA12A P4SMA200A
    Text: P4SMA SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — For surface mounted application in order to optimize board space — Low profile package — Built-in strain relief


    Original
    PDF SMA/DO-214AC E-326243 P4SMA180 P4SMA180A P4SMA200 P4SMA200A 300us, P4SMA200A. P4SMA10 P4SMA10A P4SMA11 P4SMA11A P4SMA12 P4SMA12A P4SMA200A

    Untitled

    Abstract: No abstract text available
    Text: HEF4082B DUAL 4-INPUT AND GATE The HEF4082B provides the positive dual 4-input AND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance. rMJ^jJTzUïïTJiôU^ Vqo O2 la 3 HEF4082B 11 11 I? I3 I5 ¡6


    OCR Scan
    PDF HEF4082B HEF4082B HEF4082BP 14-lead OT27-1) HEF4082BD HEF4082BKD)

    RREL 24 Relay

    Abstract: RREL 20 Relay RK415 rril 24-15-RRIL rrmj RRIL-23 RK 0313 RRIG Rmj Relay
    Text: ASEA Catalogue RK 41-2 E Instantaneous current and voltage relays type RRIL and RREL / For use in sho rt-circuit protections, earth-fault protections etc. frequently in com bination with tim e-lag relays • Are electrom agnetic load capacity ■ with high


    OCR Scan
    PDF

    sfc 4.5 ma

    Abstract: No abstract text available
    Text: P H I L IP S E C G INC 17E 0 • E C G 1133 TV SOUND IF DETECTOR semiconductors ,870 3 Stage D ifferential IF Am plifier . 19 - Phase Detector Ä lM iÄ li D C Operated Volum e Control ¿to A F A m plifier .240 Easily Adjustable with Ceramic Filter Ï Ï Ï Ï Ï Ï Ï Ï


    OCR Scan
    PDF ECG1133 sfc 4.5 ma

    rrmj

    Abstract: RMJ2 ASEA rrmj RMJ 2 ASEA rrmj relay rrm ASEA rrmj4 RM1S asea relay RI Rmj Relay
    Text: ,.|.vs IN S T A N T A N E O U S CURRENT AND V O L T A G E RELAYS <36934] The A S E A instantaneous over-current, under-current, over-volt age and under-voltage re la y s , designated K M J and R R M J, arc of the electromagnetic type and designed' for either direct current or alternating current. They are


    OCR Scan
    PDF fl224 rrmj RMJ2 ASEA rrmj RMJ 2 ASEA rrmj relay rrm ASEA rrmj4 RM1S asea relay RI Rmj Relay

    Untitled

    Abstract: No abstract text available
    Text: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency


    OCR Scan
    PDF BUTW92

    RMJ BH

    Abstract: SKIIP2* CASE
    Text: s e MIKRO n SKiiP 262 GPL 060 - 452 W T 12 Absolute Maximum Ratings Symbol | Conditions1* IGBT & Inverse Diode V ces V c c 101 lc iCM T j 3' Visol 41 If I fm I fsm l2t Diode) Driver Vsi V s 2 9* dv/dt Top, Tstg Operating DC link voltage Theatsink - 25 °C


    OCR Scan
    PDF 262GD060 RMJ BH SKIIP2* CASE

    BPW 64 photo

    Abstract: PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033
    Text: Silizium-Foto-PIN-Diode Silicon Photo PIN Diode Anwendung: Ultra-schneller Foto-Detektor Application: Ultra high speed photo-detector Besondere Merkmale: Features: • Kurze Ansprechzeiten bei kleinen Spannungen • Fast response times at low operating voltages


    OCR Scan
    PDF 5033/IEC BPW 64 photo PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033

    41 BTJ

    Abstract: BFJ 49 marking code AYJ td 1410 85L1 bfj 47 WL 431 P4SMA10A P4SMA11 P4SMA11A
    Text: TAIWAN SEMICONDUCTOR P4SMA SERIES 400 Watts Surface Mount Transient Voltage Suppressor SM A/DO-214AC ¿i COMPLIANCE RoHS ca;iK! y.K'.i.ii] Features •‘r F o r s u rfa c e b o a rd <> L o w m o u n te d a p p lic a tio n In o r d o r to p ro tlle G le B S


    OCR Scan
    PDF SMA/DO-214AC pa136 P4SMA17H P4SMM70A P43MMS0 P4SMA180A P4SMA200 M200A 30Cus, P4SMA200A. 41 BTJ BFJ 49 marking code AYJ td 1410 85L1 bfj 47 WL 431 P4SMA10A P4SMA11 P4SMA11A

    MURATA CDA 5.5 MHZ

    Abstract: CDA 5,5 MC FT-707 MURATA CDA 5.5 MC CDA 4.5 mc CDA MC murata cda sfc 4.5 ma 0-12V ECG1133
    Text: PHILIPS E C G INC 17E 0 • bbSBTSfl 00041BÛ G ■ 7 ^ 7 7 * 0 7 - 6 7 E C G 1133 TV SOUND IF DETECTOR semiconductors ,870 3 Stage Differential IF Amplifier .»IS - Phase Detector AA&&AÂÂÂ DC Operated Volume Control .2 *0 A F Am plifier 77mm E a sily A djusta ble with C e ram ic Filter


    OCR Scan
    PDF 00041BÃ ECG1133 ECQ1133 MURATA CDA 5.5 MHZ CDA 5,5 MC FT-707 MURATA CDA 5.5 MC CDA 4.5 mc CDA MC murata cda sfc 4.5 ma 0-12V ECG1133

    mi cj

    Abstract: CPT30135 CPT30140 CPT30145
    Text: Schottky PowerMod CPT30135 - CPT30145 ¥ Dim. Inches Min. Baseplate A=Common Anode V U l- 1 1 H h 1 / -1 - 1 \ ! Baseplate Common Cathode F / u \ — , r l~ 1 l _ ° N <= | N ° Baseplate D=Doubler A B C E F G H N Q R U V W M illim eters Max. Max. Min.


    OCR Scan
    PDF CPT30135 CPT30145 CPT30135 CPT301 mi cj CPT30140 CPT30145

    Untitled

    Abstract: No abstract text available
    Text: 2J0Amp SCHOTTKY D a ta Sheet BARRIER RECTIFIERS Semiconductor Mechanical Dimensions 1^ 4 .06/4 .60^ s 4E Cathode _ Package “SMB I3.30/3.90 h-s.io/5/58^ .11/.30 1 .65/2 .191- •! 1 .91/2.4 .01/. 20 1 .90/ 2.15 Featwes • EXTREMELY LOW V F ■ M AJORITY CARRIER CONDUCTION


    OCR Scan
    PDF io/5/58^ SMB220 SMB230 SMB240 SMB250 SMB260 SMB2100 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: 2 1 - 1BW AC-DC Single Output Interchangeable Wall-mounted type GE18 senes I F é a l u re £ : b i l n d i B i i g e d i l e r i C s l . ç f î i s l . ç U æ i l ¿ a c - a r a ta y l U intì'sa AC i nfLl i K j I ra-ig* Nù M d cc/n^-'ociei.netoitC’jaw


    OCR Scan
    PDF -43-Y 16WAC-DC

    Untitled

    Abstract: No abstract text available
    Text: F l 7.5 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions m Features • HIGH CURREHT CAPABILITY WITH LOW V F ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ SUPERIOR M ETAL PROCESS ■ M EETS UL SPECIFICATION 94V-0


    OCR Scan
    PDF FBR735 FBR740 FBR74S 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: 35 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS D a ta Sheet Semiconductor Mechanical Dimensions Description Q Leads 1.00typ. ,05Dia. m m m Features • LOW COST ■ LOW LEAKAGE CURRENT ■ HIGH SURGE CAPABILITY ■ HIGH TEMPERATURE CAPABILITY ■ DIFFUSED JUNCTION


    OCR Scan
    PDF 00typ. 05Dia. FR3501 FR3502 FB3503 FR3504 FR3506 FR350S FR3510 51X25X30cm

    BCP54

    Abstract: BCP51 BCP52 BCP53 BCP54-10 BCP54-16 BCP55 BCP56
    Text: • bbSB^Bl 0Q24551 AIT B A P X N AMER PHILIPS/DISCRETE b?E D JV. BCP54 BCP55 BCP56 SILICON PLANAR EPITAXIAL TRANSISTORS M edium p ow er npn transistors in a m inia tu re plastic envelope intended fo r applications in th ic k and th in -film circuits. T h e y are general purpose transistors, p rim a rily designed fo r audio a m p lifie r o u tp u t


    OCR Scan
    PDF bbS3131 0Q24551 BCP54 BCP55 BCP56 BCP51, BCP52 BCP53 BCP54 BCP55 BCP51 BCP54-10 BCP54-16 BCP56

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm 74F86 2-Input Exclusive-OR Gate General Description This device contains four independent gates, each of which performs the logic exclusive-OR function. Ordering Code: Commercial Package Package Description Number 74F86PC N14A 14-Lead 0.300" Wide Molded Dual-in-Line


    OCR Scan
    PDF 74F86 74F86PC 14-Lead 74F86SC 74F86SJ

    BUK657-500B

    Abstract: T0220AB transistor D 587
    Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan
    PDF BUK657-500B T0220AB transistor D 587

    2T2 transistor

    Abstract: BUK456 BUK456-200A BUK456-200B T0220AB PHILIPS 016
    Text: PHILIPS INTERNATIONAL bSE T> m TUDfiEb OObHlEl 5^3 • PHIN Philips Semiconductors Product Specification BUK456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan
    PDF BUK456-200A/B T0220AB -100-C -200A -200B 711DA2b DDb41BS 2T2 transistor BUK456 BUK456-200A BUK456-200B PHILIPS 016

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


    OCR Scan
    PDF OT227B BUK617-500AE/BE BUK617 0030fib4 1E-02

    circuit diagram for samsung lcd

    Abstract: ks531 IC mark A09 lcd circuit diagram for samsung digital alarm watch circuit
    Text: SAMSUNG SE MI CO ND UCTOR INC 05 KS5184 D E j 7 ^ 4 1 4 5 aD0Sb7a fi | D. CMOS DIGITAL INTEGRATED CIRCUIT 6 FUNCTION 6 DIGIT ALARM WATCH WITH CHIME FOR DUPLEXED LCD The KS5184 is a CMOS 6 function watch circuit with alarm function and chime; designed to use with 6 Digit duplexed liquid crystal display with


    OCR Scan
    PDF KS5184 KS5184 KS5310 hour/24 Driv5055 circuit diagram for samsung lcd ks531 IC mark A09 lcd circuit diagram for samsung digital alarm watch circuit