RM10A Search Results

Contextual Info: SANKEN ELECTRIC CO., LTD. RM10A １ Scope The present specifications shall apply to an RM10A. ２ Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings

Contextual Info: Critical Conduction Mode PFC Control IC SSC2005SC General Description Package SSC2005SC is a Critical Conduction Mode CRM control IC for power factor correction (PFC). Since no input voltage sensing and no auxiliary winding for inductor current detection are required, the

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

diode rm10A

Abstract: RM10A RO Series RM10 RM10B RM10Z 10zrm
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. RM 10Z RM 10 RM 10A RM 10B RM 2Z RM 2 RM 2A RM 2B RM 2C RO 2Z RO 2 RO 2A RO 2B RO 2C Tj (°C) IFSM (A) VRM (V) I F (AV) (A) 200 400 600 800 200 400 600 800

Contextual Info: TB6819AFG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6819AFG Critical Conduction Mode CRM PFC Controller IC Features • Operating voltage range: 10.0 to 25 V • Startup voltage: 12.0 V (typ.) • Maximum drive current: 1.0 A • Variety of protection circuits

RBV-406M

Abstract: RM1Z 52 RBV-606 RBV-606H AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

RM1Z 12

Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

NTPA73R0LBMB0

Contextual Info: TB6819AFG 東芝BiCD集積回路 シリコン モノリシック TB6819AFG CRM（電流臨界モード）方式 PFC 制御 IC 特 長 • 動作電圧範囲：10.0 to 25V • 起動電圧：12.0V typ. • 最大ドライブ電流：1.0A • 各種保護回路を内蔵

R02Z

Abstract: SG5T RM11C SANKEN
Contextual Info: iBBWiMiHSNieipeiBiie i IODES mm • RECTIFIER DIODES V rm lo IpSM Vf V) (A) (A) Max. @ lF (V) SFPM-52 200 SFPM-54 400 SFPM-62 200 SFPM-64 0.9 30 1.0 1.0 45 0.98 ¡R (A) Vrm lo Ifsm VF ,<V> (A) (A) Max. @ lF Type No. (H A ) Max. (V) RM4Y 100 200 RM 4Z 200

SSC200

Contextual Info: Critical Conduction Mode PFC Control IC SSC2005S General Description Package SSC2005S is a Critical Conduction Mode CRM control IC for power factor correction (PFC). Since no input voltage sensing and no auxiliary winding for inductor current detection are required, the

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

ferrite core rm10

Abstract: FERRITE RM5 RM8/neosid RM10 ferrite core
Contextual Info: RM core,RM cores,ferrite RM core,RM5 core,ferrite RM cores,MnZn Core RM12,RM6 core,RM8 core, China Professional Ferrite Core Supplier print version RM CORES Ferrite RM square Cores The design of Yuxiang RM cores (square cores) maximizes magnetic performance while minimizing PC board

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

RM10

Abstract: RM10A RM10B RM10Z
Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES D2 PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * * 0.161 4.10 0.154 (3.90) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free

RM1Z

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

RM10

Abstract: RM10A RM10B RM10Z RM-10
Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes D2 FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.161 (4.10) 0.154 (3.90)

Contextual Info: Silicon rectifier diodes. 1 Amp. to 1.2 Amps The plastic material carries U/L recognition 94V-0. TYPE Axial Lead | S.M .D. Maximum Average Forward Rectified Current iFfAVi @Ta A 1 ( °C) Max. Recurrent Reverse Voltage Repetitive Peak Forward Current Forward

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter Type No. RM 10Z RM 10 RM 10A RM 10B RM 2Z RM 2 RM 2A RM 2B RM 2C RO 2Z RO 2 RO 2A RO 2B RO 2C IFSM （A） VRM （V） I F（ AV） （A） 200 400 600 800 200 400

RM1Z 12

Abstract: RBV-150C RBV-40C RM10 RM10A RM10B RM10Z
Contextual Info: Rectifier Diodes Package I F AV (A) Part Number IFSM (A) 50Hz ( ) is with Half-cycle Sinewave Single Shot Heatsink Axial 1000 Tstg (°C) IR (µA) VF (V) max IF (A) IR (H) (µA) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) 0.8 40 –40 to +150

RM10

Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES D2 PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * * 0.161 4.10 0.154 (3.90) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free

T10X5X5

Abstract: EER54 EE55B
Contextual Info: Magnetic Material Ind . Co., LTD Introduction & Characteristics of MnZn Ferrite cores Page1-12 Mnzn Power Material EER,ETD,RM,UYF,EP,EPC,UY,EFD,LP Page13-18 PQ,URS,UF&UI,ED,T,EI,EE Page19-26 Mnzn High Permeability Material EE,EI,EP,FT&ET,UF&UI,T,RM, Common mode choke cores applied in EMS,ET

RN4Z

Contextual Info: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20