lga-16 4x4
Abstract: LGA-16 3x3 LGA-16 MICRO-X w1 sot-5 PLCC-28 SOIC-14 SOIC-16 SSOP-16 TSSOP-16
Text: Application Note Discrete Devices and IC Switch/Attenuators Tape and Reel Package Orientation Tape Dimensions Label P1 P0 40 75 00 s1 A 30 Y. trie V. QT C us RE EV. Ind 00 R rks 94 P2 D0 E1 o -9 I 3 0-0 yw 07 ULT 90 4 Sk MP13 R-M DE-9 338-1 _ S AFE CO - 1 _ _ _ _
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SC-79
OD-323
SC-70
SC-88
OT-23
OT-143
lga-16 4x4
LGA-16 3x3
LGA-16
MICRO-X
w1 sot-5
PLCC-28
SOIC-14
SOIC-16
SSOP-16
TSSOP-16
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lga-16 4x4
Abstract: LGA-16 LPCC16
Text: APPLICATION NOTE Discrete Devices and IC Switch/Attenuators Tape and Reel Package Orientation Tape Dimensions Label P1 P0 P2 D0 40 75 00 s1 A 30 Y. trie V. QT C us RE EV. Ind 00 R rks 94 E1 o -9 I 3 0-0 yw 07 ULT 90 4 Sk MP13 R-M DE-9 338-1 _ S AF E C O - 1 _ _ _ _
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32-Lead
LGA-16
lga-16 4x4
LGA-16
LPCC16
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RK7002A
Abstract: T116
Text: RK7002A Transistors Switching 60V, 300mA RK7002A (2) ∗Gate Protection Diode. (1) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are
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RK7002A
300mA)
RK7002A
T116
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sot-23 rks
Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
Text: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1346
900MHz
Dec-13-1996
sot-23 rks
marking code RKS transistors
transistor bf 194
NF 841
pcb antenna 1356
Q62702-F1346
bf 194 pin configuration
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bf 194 pin configuration
Abstract: Transistor BFR 35 BFr pnp transistor
Text: BFR 194 PNP Silicon RF Transistor 3 For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Complementary type: BFR 106 NPN 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05161
OT-23
900MHz
Oct-25-1999
bf 194 pin configuration
Transistor BFR 35
BFr pnp transistor
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RK7002A
Abstract: T116
Text: RK7002A Transistors Switching 60V, 300mA RK7002A (2) ∗Gate Protection Diode. (1) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are
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RK7002A
300mA)
RK7002A
T116
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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nd 16 TRANSISTOR SOT-23
Abstract: TRANSISTOR b 772 p sot-23 rks MA4T645 transistor TE 901 equivalent SOT-143 717 mount chip transistor 332 RKS SOT23 MA4T64500 MA4T64539
Text: MA4T645 Series M/A-COM Silicon Bipolar High fT Low Noise Microwave Transistors M crow ave Products Case Style Features • • • • • • • A MI RÂF & C G M fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available
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MA4T645
OT-23
OT-143
MA41344)
nd 16 TRANSISTOR SOT-23
TRANSISTOR b 772 p
sot-23 rks
transistor TE 901 equivalent
SOT-143 717
mount chip transistor 332
RKS SOT23
MA4T64500
MA4T64539
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CD 4016 ic testing method
Abstract: MA46589
Text: ML46580S-992 M/A-COM Preliminary Specifications High Reliability Semiconductor - Beam Lead Gallium Arsenide Tuning Varactor Diode Features • • • • • Package Outline Constant Gamma of 1.25 Strong Beam Construction Low Parasitic Capacitance High Q
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OCR Scan
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PDF
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ML46580S-992
ML46580S-992
MA46580-46584
MA46585-46589
CD 4016 ic testing method
MA46589
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sot-23 rks
Abstract: No abstract text available
Text: MA4ST400 Series M/A-COM Surface Mount Hyperabrupt Varactors Features • • • • • Surface Mount Packages High Quality Factor Capacitance Ratio to 9.5:1 Tape and Reel Packaging Available SPC Monitored Ion Implantation for Excellent C-V Repeatability
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MA4ST400
OT-233
OT-23
sot-23 rks
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sot-23 rks
Abstract: rks sot-23
Text: rrimw TECHNOLOGY Electrical Specifications Subject to Change _ LTC2050 Zero Drift O p e ra tio n a l A m p lifie r A u gu st 1999 FCRTURCS D C S C R IP TIO n • SOT-23 Package ■ Maximum Offset Voltage: 5|iV ■ Maximum Offset Voltage Drift: 50nV/°C
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OCR Scan
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PDF
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OT-23
10HzTyp)
130dB
LTC2050
OT-23
sot-23 rks
rks sot-23
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BFR194
Abstract: No abstract text available
Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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PDF
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Q62702-F1346
OT-23
15toimax
BFR194
900MHz
BFR194
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TS 11178
Abstract: No abstract text available
Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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PDF
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Q62702-F1346
OT-23
B535bQ5
BFR194
900MHz
TS 11178
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sot-23 MARKING CODE 21
Abstract: RC32 RESISTOR rc-26 sot-23 rks California Micro Devices ST-103
Text: CALIFORNIA MICRO DEVICES PRC 207/298/299 ► ► ► ► ► CLO CK TERM INATOR AND LO CAL EMI/RFI FILTER Features Applications • • • • • • • • • Filters at source of emissions Stable resistor-capacitor network Ideal for high-speed logic
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Untitled
Abstract: No abstract text available
Text: BSS 84P In fin e o n technologies Preliminary Data SIPMOS Small-Signal-T ransislor Features Product Summary • P Channel Drain source voltage Vos • Enhancement mode -60 Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 8
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OCR Scan
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PDF
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OT-23
Q67041-S1417
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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2N 10261
Abstract: 1026F 5-PIN MARKING JM sot-23 rks
Text: r r u v _LT1026 V o lta g e C o n ve rte r m TECHNOLOGY FEATURES DESCRIFTlOn • Generates + and - from Single Input The LT 1026 is a switched capacitor voltage doubler and ■ Up to ±18V Output inverter on a single monolithic die. Capable of operating
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LT1026
tioTC1517-5
LTC1550/LTC1551
LTC1555/LTC1556
OT-23
900kHz,
1026faLTATP
2N 10261
1026F
5-PIN MARKING JM
sot-23 rks
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LTC DWG 05-08-1633
Abstract: lt1694 0-15V BSS284 LTC1694-1 LTC1694-1CS5 3D marking S0T23 LT1786F
Text: r r u r LTC1694-1 m TECHNOLOGY SMB us/I2C A c c e le r a to r F€fflTUR€S DCSCRIPTIOn • Improves SMBus/l2C Rise Time Transition ■ Ensures Data Integrity with Multiple Devices on the SMB us/I2C ■ Improves Low State Noise Margin ■ Wide Supply Voltage Range: 2.7V to 6V
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LTC1694-1
OT-23
LTC1694-1
LTC1427
10-Bit
50jaA
LTC1623
Addresses/16
LTC1663
LTC DWG 05-08-1633
lt1694
0-15V
BSS284
LTC1694-1CS5
3D marking S0T23
LT1786F
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Untitled
Abstract: No abstract text available
Text: r r u n _ LTC1522 m TECHNOLOGY M icro p o w e r, R e g u la te d 5V C h a rg e Pum p D C /D C C o n v e rte r F€RTUR€S D C S C R IP TIO n • Ultralow Power: Typical Operating Iqc = 6uA ■ Short-Circuit/Thermal Protected ■ Regulated 5V ±4% Output Voltage
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OCR Scan
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PDF
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LTC1522
700kHz
LTC1517-5
LTC1522
OT-23
LTC1555/56
LTC660
100mA
1522f
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LT-1515
Abstract: No abstract text available
Text: r r w m _ _ _ ^ C 1 5 1 £ S e r i e s TECHN O LO GY Step -U p /Step -D o w n S w itch e d C a p a c ito r D C /D C C o n ve rte rs w ith R eset F€flTUR€S DCSCRIPTIOn • Adjustable/Selectable 3V, 3.3V or 5V Output Voltages ■ 2V to 10V Input Voltage Range
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LTC1515-3/5
LTC1515-3
LTC1515)
LTC1515-3/5)
100mA
OT-23
LT-1515
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 128 Bit I2C Bus Serial EEPROM PACKAGE TYPES DEVICE SELECTION TABLE Device Vcc Range Temp Range 24AA00 1.8- 6.0 C,l 24LC00 2.5- 6.0 C,l 24C00 4.5 - 5.5 C.I.E 8-PIN PDIP SOIC NC H 1 Vcc 2 rs •t* X
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24AA00
24LC00
24C00
100kHz
400kHz
OT-23
S21178A-page
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Untitled
Abstract: No abstract text available
Text: LTC1665/LTC1660 u f m TECHNOLOGY Micropower O ctal 8-Bit and 10-Bit DACs FCRTURCS DCSCRIPTIOn • Tiny: 8 DACs in the Board Space of an SO-8 ■ Micropower: 56|jA per DAC Plus 1|oA Sleep Mode for Extended Battery Life ■ Pin Compatible 8-Bit LTC1665 and 10-Bit LTC1660
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LTC1665/LTC1660
10-Bit
LTC1665
LTC1660
1000pF
LTC1660
16-pin
LTC1590
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Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications r r i r n m TECHNOLOGY LTC1663 2-Wire Interface 10-Bit Rail-to-Rail M icropow er DAC August 1999 KfìTURCS D C S C R IP TIO n • ■ ■ ■ The LTC 1663 is a 10-bit voltage output DAC with true buffered rail-to-rail output voltage capability. It operates
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LTC1663
10-Bit
10-Bit
75LSB
16-Pin
LTC1285/LTC1288
LTC1286/LTC1298
LTC1594/LTC1598
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Untitled
Abstract: No abstract text available
Text: L if m _ LT1460-2.5 TECHNOLOGY M ic ro p o w e r Precision Series R efe re nce FCflTURCS D C S C R IP TIO n • ■ ■ ■ Trim m ed to High Accuracy: 0 .0 7 5 % M a x Lo w Drift: 10ppm /°C M a x Industrial Tem perature Range S O Package Tem perature Coefficient Guaranteed to 12 5 °C
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PDF
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10ppm
vol60
R61RTCD
LT1236
LT1019
LT1027
1460fa
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