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    RKD750KN Datasheets (1)

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    RKD750KN Renesas Technology Silicon Schottky Barrier Diode for Detector Original PDF

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    RKD750KN

    Abstract: DSA001020
    Text: RKD750KN Silicon Schottky Barrier Diode for Detector REJ03G1359-0100 Rev.1.00 May 15, 2006 Features • Low forward voltage, Low capacitance and High detection sensitivity. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and


    Original     		RKD750KN REJ03G1359-0100 0805type; PXSN0002ZA-A RKD750KN DSA001020 PDF

    RKD750KN

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF