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    RJP1CS03DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 30A Wafer Visit Renesas Electronics Corporation

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter R07DS0826EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching


    Original     		RJP1CS03DWT/RJP1CS03DWA R07DS0826EJ0100 RJP1CS03DWT-80 RJP1CS03DWA-80 R07DS0826EJ0100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet RJP1CS03DWT / RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter R07DS0826EJ0200 Rev. 2.00 Oct 07, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Tc = 25°C) • High speed switching


    Original     		RJP1CS03DWT RJP1CS03DWA R07DS0826EJ0200 RJP1CS03DWT-80 RJP1CS03DWA-80 175Note1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter R07DS0826EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching


    Original     		RJP1CS03DWT/RJP1CS03DWA R07DS0826EJ0002 RJP1CS03DWT-80 RJP1CS03DWA-80 PDF