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    RJL60S5DPE-00#J3 Renesas Electronics Corporation 600V - 20A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation

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    RJL60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5

    RJL60S5

    Abstract: RJL60S5DPE
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5 RJL60S5DPE