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    RJK03F6DNS-00#J5 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03F6DNS R07DS0660EJ0200 Previous: REJ03G1916-0100 Rev.2.00 Feb 01, 2012 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03F6DNS R07DS0660EJ0200 REJ03G1916-0100) PWSN0008JB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03F6DNS R07DS0660EJ0200 Previous: REJ03G1916-0100 Rev.2.00 Feb 01, 2012 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03F6DNS R07DS0660EJ0200 REJ03G1916-0100) PWSN0008JB-A

    PWSN0008JB-A

    Abstract: No abstract text available
    Text: Datasheet RJK03F6DNS REJ03G1916-0100 Rev.1.00 Apr 21, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 4.5 m typ. (at VGS = 8 V)


    Original     		PDF RJK03F6DNS REJ03G1916-0100 PWSN0008JB-A i9044 PWSN0008JB-A