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    RJK03C1 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK03C1DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 30V 60A 2.2Mohm Lfpak, LFPAK, /Embossed Tape Visit Renesas Electronics Corporation
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    RJK03C1 Price and Stock

    Renesas Electronics Corporation RJK03C1DPB-00#J5

    MOSFET N-CH 30V 60A LFPAK
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    RJK03C1DPB-00#J5 Digi-Reel 1
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    RJK03C1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJK03C1DPB-00#J5 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A LFPAK Original PDF

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    RJK03C1DPB

    Abstract: No abstract text available
    Text: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		PDF RJK03C1DPB REJ03G1830-0310 PTZZ0005DA-A RJK03C1DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		PDF RJK03C1DPB REJ03G1830-0310 PTZZ0005DA-A

    RJK03C1DPB

    Abstract: No abstract text available
    Text: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		PDF RJK03C1DPB REJ03G1830-0310 PTZZ0005DA-A RJK03C1DPB

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    RJK03C1DPB

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF