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    RISE TIME APD Search Results

    RISE TIME APD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27S25DM Rochester Electronics LLC OTP ROM Visit Rochester Electronics LLC Buy
    AM27C256-55PC Rochester Electronics LLC OTP ROM, Visit Rochester Electronics LLC Buy
    ICM7170AIDG Rochester Electronics LLC Real Time Clock, CMOS, CDIP24, ROHS COMPLIANT, CERAMIC, DIP-24 Visit Rochester Electronics LLC Buy
    ICM7170AIBG Rochester Electronics LLC Real Time Clock, CMOS, PDSO24, ROHS COMPLIANT, PLASTIC, MS-013AD, SOP-24 Visit Rochester Electronics LLC Buy
    ICM7170IBG Rochester Electronics LLC Real Time Clock, CMOS, PDSO24, ROHS COMPLIANT, PLASTIC, MS-013AD, SOP-24 Visit Rochester Electronics LLC Buy

    RISE TIME APD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 571

    Abstract: 118-70-74-591 394-70-74-591 LM335 OM350
    Text: Cooled - Large Area APDs Electro-Optical Characteristics All specifications apply when APD is operated at 0ºC and at a gain of 300. 3 mm Active Diameter Bias Voltage Range† mm 3 5 10 16 (V) 1700 to 2000 Temperature Capacitance Dark Current Rise Time Noise Current


    Original     		PDF 100kHz 675nm 118the LM335 350nm. IC 571 118-70-74-591 394-70-74-591 OM350

    Avalanche photodiode APD

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance


    Original     		PDF SSO-AD-500-TO52 Avalanche photodiode APD

    nir source

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance


    Original     		PDF SSO-AD-230-TO52 nir source

    APD500-LCC

    Abstract: No abstract text available
    Text: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.


    Original     		PDF APD500-LCC APD500-LCC

    APD230-LCC

    Abstract: No abstract text available
    Text: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.


    Original     		PDF APD230-LCC APD230-LCC

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)


    Original     		PDF SSO-AD-800-TO5i

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-500-TO52 50oltage

    SSO-AD-500-TO52i

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR


    Original     		PDF SSO-AD-500-TO52i SSO-AD-500-TO52i

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)


    Original     		PDF SSO-AD-1100-TO5i 1130m

    avalanche photodiode noise factor

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-230-TO52i avalanche photodiode noise factor

    Avalanche photodiode APD

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR


    Original     		PDF SSO-AD-230-TO52 Avalanche photodiode APD

    MAX3726

    Abstract: analog PIN Photodiode 3GHz
    Text: 19-3386; Rev 0; 8/04 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ Low 115mW Power Consumption ♦ 16-Pin QFN Package with 3mm x 3mm Footprint ♦ 70ps Rise and Fall Time ♦ Loss-of-Signal with Programmable Threshold


    Original     		PDF 622Mbps 115mW 16-Pin MAX3744/MAX3724 MAX3746 MAX3744/ MAX3724 SFF-8472 MAX3748A MAX3726 analog PIN Photodiode 3GHz

    TO52

    Abstract: SSO-AD-230-TO52-S1
    Text: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-230-TO52-S1 TO52 SSO-AD-230-TO52-S1

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-1900-TO5i SSO-AD-2500-TO5i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 1900 or 2500 µm diameter active area low capacitance Parameters: SSO-AD-1900 TO5i active area 1950 mm ∅ 3,0 µm 2520 mm ∅ 5,0 µm


    Original     		PDF SSO-AD-1900-TO5i SSO-AD-2500-TO5i SSO-AD-1900 SSO-AD-2500

    10G APD chip

    Abstract: Photodiode apd RSSI 10G APD DS1858 MAX3744 MAX3748 MAX3748A MAX3748AETE MAX3748ETE
    Text: 19-2717; Rev 1; 7/03 KIT ATION EVALU E L B AVAILA Compact 155Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ 16-Pin QFN Package with 3mm ✕ 3mm Footprint ♦ Single +3.3V Supply Voltage ♦ 86ps Rise and Fall Time A received-signal-strength indicator RSSI is available


    Original     		PDF 155Mbps 16-Pin MAX3748/MAX3748A MAX3744 MAX3744* MAX3748/ MAX3748A MAX3748/MAX3748A 10G APD chip Photodiode apd RSSI 10G APD DS1858 MAX3748 MAX3748AETE MAX3748ETE

    300-pin

    Abstract: 300pin msa dwdm TPD-MR-04-XXXXXXXX
    Text: TPD-MR-04-XXXXXXXX Features Description  Compliant with the 300 pin SFF MSA TPD-MR-04-XXXXX C-band DWDM 300 pin SFF  Support multi-rate from 9.953Gb/s to 11.3Gbps transponder  C-band DWDM laser and PIN/APD receiver applications with reaches of up to 40km, which


    Original     		PDF TPD-MR-04-XXXXXXXX 953Gb/s 100GHz 800ps/nm 16-bit 08Mbps TPD-MR-04-XXXXX 95Gbps 10Gbit/s 86-28-8795-8788Fax: 300-pin 300pin msa dwdm TPD-MR-04-XXXXXXXX

    10G APD RX

    Abstract: No abstract text available
    Text: Preliminary Datasheet TPD-MR-08-34CDL5A Features Description z Compliant with the 300 pin SFF MSA TPD-MR-08-34CDL5A z Support multi-rate from 9.953Gb/s to 11.3Gbps transponder is intended for SONET/SDH system z C-band DWDM laser and PIN/APD receiver applications with reaches of up to 80km, which


    Original     		PDF TPD-MR-08-34CDL5A 953Gb/s 100GHz 1600ps/nm 16-bit 08Mbps TPD-MR-08-34CDL5A 95Gbps 10Gbit/s 86-28-8795-8788Fax: 10G APD RX

    C30737LH-500-92

    Abstract: CERAMIC LEADLESS CHIP CARRIER
    Text: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,


    Original     		PDF C30737PH C30737LH C30737 C30737PH-LH-Rev C30737LH-500-92 CERAMIC LEADLESS CHIP CARRIER

    Untitled

    Abstract: No abstract text available
    Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The


    Original     		PDF 264-339757-VAR 264-339757-VAR 12-lead 1000-1600nm 200um Opto757-VAR

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity

    C30817E

    Abstract: No abstract text available
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E

    MY9221

    Abstract: MY-Semi
    Text: MY9221 MY-Semi 12-Channel LED Driver With Grayscale Adaptive Pulse Density Modulation Control General Description Features The MY9221, 12-channels R/G/B x 4 c o n s t a n t current APDM (Adaptive Pulse Density M o d u l a t i o n ) LED driver, operates over a 3V ~ 5.5V


    Original     		PDF MY9221 12-Channel MY9221, 12-channels MY9221 16r/crime-prevention MY-Semi

    APDS-9005

    Abstract: Ambient Light Sensor APDS-9005-020 photo sensor 700 PHOTO SENSOR of application SMD LQ3 APDS9005 makrolon photo resistor light
    Text: APDS-9005 Miniature Surface-Mount Ambient Light Photo Sensor Data Sheet Description Features The APDS-9005 is a low cost analog-output ambient light photo sensor in miniature chipLED lead-free surface mount package. It consists of a photo sensor, whose spectral response is close to the CIE standard photopic


    Original     		PDF APDS-9005 APDS-9005 100Hz. AV01-0598EN AV02-0080EN Ambient Light Sensor APDS-9005-020 photo sensor 700 PHOTO SENSOR of application SMD LQ3 APDS9005 makrolon photo resistor light

    EG*G Optoelectronics

    Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
    Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c


    OCR Scan     		PDF C30724P 900nm C30724P EG*G Optoelectronics C30724 EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100