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    RIDGE WAVEGUIDE SEMICONDUCTOR LASER Search Results

    RIDGE WAVEGUIDE SEMICONDUCTOR LASER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RIDGE WAVEGUIDE SEMICONDUCTOR LASER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    laser diode RW

    Abstract: laser diode specification sheet fabry perot laser spectrum fabry perot TEM00 laser diode pinout EYP-RWL-0730-00020-1500-SOT02-0000 diode device data on semiconductor
    Text: 1.00 05.06.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry/Perot Laser with Ridgle Waveguide RWL DATA SHEET RW Laser EYP-RWL-0730-00020-1500-SOT02-0000 Absolute Maximum Ratings Symbol Unit Operational Temperature at case


    Original     		PDF EYP-RWL-0730-00020-1500-SOT02-0000 laser diode RW laser diode specification sheet fabry perot laser spectrum fabry perot TEM00 laser diode pinout EYP-RWL-0730-00020-1500-SOT02-0000 diode device data on semiconductor

    tunable laser diode

    Abstract: TPL 250 EYP-RWE-0870-06010-0750-SOT01-0000
    Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0870-06010-0750-SOT01-0000


    Original     		PDF EYP-RWE-0870-06010-0750-SOT01-0000 tunable laser diode TPL 250 EYP-RWE-0870-06010-0750-SOT01-0000

    MW110

    Abstract: tunable laser diode laser diode lifetime EYP-RWE-0850-05010-1500-SOT02-0000
    Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0850-05010-1500-SOT02-0000


    Original     		PDF EYP-RWE-0850-05010-1500-SOT02-0000 MW110 tunable laser diode laser diode lifetime EYP-RWE-0850-05010-1500-SOT02-0000

    tunable laser diode

    Abstract: Laser Diode 10 pin laser diode pinout laser
    Text: Version 0.91 04.11.2009 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0980-08020-1500-SOT02-0000


    Original     		PDF EYP-RWE-0980-08020-1500-SOT02-0000 tunable laser diode Laser Diode 10 pin laser diode pinout laser

    EYP-RWE-0790-04000-0750-SOT01-0000

    Abstract: laser diode pinout laser 790 nm
    Text: Version 0.90 28.12.2007 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0790-04000-0750-SOT01-0000


    Original     		PDF EYP-RWE-0790-04000-0750-SOT01-0000 EYP-RWE-0790-04000-0750-SOT01-0000 laser diode pinout laser 790 nm

    EYP-RWE-0840-06010-1500-SOT02-0000

    Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
    Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000


    Original     		PDF EYP-RWE-0840-06010-1500-SOT02-0000 EYP-RWE-0840-06010-1500-SOT02-0000 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs

    Untitled

    Abstract: No abstract text available
    Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		PDF EYP-RWL-0790-00100-1500-SOT02-0000

    EYP-RWE-0940-08000-0750-SOT01-0000

    Abstract: No abstract text available
    Text: Version 0.90 09.10.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0940-08000-0750-SOT01-0000


    Original     		PDF EYP-RWE-0940-08000-0750-SOT01-0000 EYP-RWE-0940-08000-0750-SOT01-0000

    1060 nm GaAs Laser Diode

    Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
    Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000


    Original     		PDF EYP-RWE-1060-10020-0750-SOT01-0000 1060 nm GaAs Laser Diode ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime

    ridge waveguide semiconductor laser

    Abstract: No abstract text available
    Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 150 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		PDF EYP-RWL-1080-00080-0750-SOT01-0000 ridge waveguide semiconductor laser

    1060 nm GaAs Laser Diode

    Abstract: No abstract text available
    Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		PDF EYP-RWL-1060-00100-0750-SOT01-0000 1060 nm GaAs Laser Diode

    laser diode 780 nm

    Abstract: No abstract text available
    Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the


    Original     		PDF EYP-RWL-0780-00100-1000-SOT01-0000 laser diode 780 nm

    Laser diode Fabry-Perot

    Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
    Text: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser


    Original     		PDF EYP-RWL-1120-00050-1300-SOT02-0000 Laser diode Fabry-Perot laser diode lifetime TEM00 ridge waveguide semiconductor laser

    Untitled

    Abstract: No abstract text available
    Text: SPECTROSCOPIC DFB-LASERS: SPECDILAS -D INTRODUCTION HHI has been involved in the development of semiconductor DFB lasers from its early start in the 80’s. Based on this experience, custom design of multi quantum well ridge waveguide laser structures is available for applications in production control,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets


    Original     		PDF

    optical source

    Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
    Text: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength


    Original     		PDF 14-pin optical source Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN

    U-CP-9850044

    Abstract: No abstract text available
    Text: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)


    Original     		PDF U-CP-9850044 980nm U-CP-9850044

    U-CP-80B0065

    Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
    Text: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm


    Original     		PDF U-CP-80B0065 808nm U-CP-80B0065 diode laser 808nm 200mW TO-CAN 808nm laser diode laser diode bare chip laser diode 808nm

    U-CP-6505011

    Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
    Text: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF U-CP-6505011 650nm 300um 100um U-CP-6505011 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip

    TO18 Laser 808nm 300 mw

    Abstract: IR Laser diode laser diode bare chip
    Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF U-CP-80E0075-preliminary 808nm 886-3-g TO18 Laser 808nm 300 mw IR Laser diode laser diode bare chip

    U-CP-6505001

    Abstract: laser diode bare chip
    Text: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF U-CP-6505001 650nm 300um 100um U-CP-6505001 laser diode bare chip

    U-CP-80C0055-preliminary

    Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
    Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF U-CP-80C0055-preliminary 808nm 886-3-g U-CP-80C0055-preliminary 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip

    Untitled

    Abstract: No abstract text available
    Text: U-CP-6505010 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505010 •Specifications 1 Size : (2) Device: (3) Structure 250*250*100 m Laser diode uncoating chip double channel , single ridge waveguide 100μm ■External dimensions(Unit : μm)


    Original     		PDF U-CP-6505010 650nm 300um 100um

    Laser Diode 808 300 mw

    Abstract: No abstract text available
    Text: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF SLD-808-P200-C-04 808nm 886-3-485-268in Laser Diode 808 300 mw