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    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B FM25040B MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 PDF

    AEC-Q100-002

    Abstract: FM25160
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C AEC-Q100-002 FM25160 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		FM25C160B FM25C160B 16-serves PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		FM25040B FM25040B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160B MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 FM25C160B PDF

    fm25040B-GTR

    Abstract: No abstract text available
    Text: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B FM25040B MS-012, MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 fm25040B-GTR PDF

    FM25640B-G

    Abstract: No abstract text available
    Text: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process


    Original     		FM25640B FM25640B 64-kilobit FM25640B-G PDF

    AEC-Q100-002

    Abstract: FM25040
    Text: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B MS-012, MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 FM25040B AEC-Q100-002 FM25040 PDF

    AEC-Q100-002

    Abstract: FM25040C
    Text: Preliminary FM25040C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25040C MS-012 FM25040C, FM25040C-G A00002G1 RIC1051 FM25040C AEC-Q100-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced high-reliability ferroelectric process Sophisticated Write Protection Scheme


    Original     		FM25640B FM25640B 64-kiserves PDF

    fm25c160bg

    Abstract: No abstract text available
    Text: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160B FM25C160B 16-kilobit MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25040C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25040C 8-pin90 MS-012 FM25040C, FM25040C-G A00002G1 RIC1051 FM25040C PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		FM25040B FM25040B PDF

    AEC-Q100-002

    Abstract: FM25040 FM25640B
    Text: Preliminary FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process


    Original     		FM25640B MS-012 FM25640B, FM25640B-G A00002G1 RIC1051 FM25640B AEC-Q100-002 FM25040 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160B MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 FM25C160B PDF

    fm25c160bg

    Abstract: AEC-Q100-002 FM25160 FM25C160B FM25C160B-GTR
    Text: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160B MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 FM25C160B fm25c160bg AEC-Q100-002 FM25160 FM25C160B-GTR PDF

    AEC-Q100-002

    Abstract: FM25040 FM25640B
    Text: Preliminary FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process


    Original     		FM25640B MS-012 FM25640B, FM25640B-G A00002G1 RIC1051 FM25640B AEC-Q100-002 FM25040 PDF

    AEC-Q100-002

    Abstract: FM25040
    Text: Preliminary FM25640C 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced high-reliability ferroelectric process


    Original     		FM25640C MS-012 FM25640C, FM25640C-G A00002G1 RIC1051 FM25640C AEC-Q100-002 FM25040 PDF

    FM25640B-G

    Abstract: No abstract text available
    Text: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process


    Original     		FM25640B FM25640B 64-kilobit MS-012 FM25640B, FM25640B-G A00002G1 RIC1051 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 FM25040B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25640C 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced high-reliability ferroelectric process


    Original     		FM25640C MS-012 FM25640C, FM25640C-G A00002G1 RIC1051 FM25640C PDF

    FM25C160b

    Abstract: No abstract text available
    Text: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		FM25C160B FM25C160B 16-kilobit PDF

    AEC-Q100-002

    Abstract: FM25160 FM25C160B
    Text: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160B MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 FM25C160B AEC-Q100-002 FM25160 PDF