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    AEC-Q100-003

    Abstract: FM25W256
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 AEC-Q100-003

    FM25W256-Gtr

    Abstract: No abstract text available
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit FM25W256-Gtr

    Untitled

    Abstract: No abstract text available
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kserves

    Untitled

    Abstract: No abstract text available
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit FM25W256, FM25W256-G A00002G1 RIC1039

    FM25W256

    Abstract: FM25W256GTR FM25W256-GTR microcontroller bus system "test bus"
    Text: Pre-Production FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256GTR FM25W256-GTR microcontroller bus system "test bus"

    Untitled

    Abstract: No abstract text available
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256

    FM25W256-G

    Abstract: FM25W256 AEC-Q100-002 RIC1039
    Text: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256 FM25W256-G AEC-Q100-002 RIC1039

    FM25W256

    Abstract: AEC-Q100-002 FM25W256-G
    Text: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256 AEC-Q100-002 FM25W256-G