IXFN66N50Q2
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS = 500 V ID25 = 66 A Ω RDS on = 74 mΩ ≤ 250 ns trr IXFN66N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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IXFN66N50Q2
OT-227
E153432
728B1
065B1
123B1
IXFN66N50Q2
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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Untitled
Abstract: No abstract text available
Text: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK20B60D1
O-247
1E-06
1E-05
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AOK20B60D1
Abstract: AOK20B60
Text: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK20B60D1
O-247
1E-06
1E-05
AOK20B60D1
AOK20B60
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Diode 400V 20A
Abstract: No abstract text available
Text: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK20B60D1
O-247
1E-06
1E-05
Diode 400V 20A
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Untitled
Abstract: No abstract text available
Text: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK20B60D1
O-247
1E-06
1E-05
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300GB
Abstract: No abstract text available
Text: SKM 300GB063D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 7 4* 8 % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 7 4* 8)
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300GB063D
300GB063D
300GAR063D
300GAL063D
300GB
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Untitled
Abstract: No abstract text available
Text: SKM 300GB063D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 7 4* 8 % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 7 4* 8)
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300GB063D
300GB063D
300GAR063D
300GAL063D
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skim250gd128d
Abstract: No abstract text available
Text: SKiM 250GD128D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (9: 12 < !" . */ !64" 0(
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250GD128D
250GD128D
skim250gd128d
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418AA
Abstract: No abstract text available
Text: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
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NTP4302,
NTB4302
O-220
NTx4302
NTB4302
0E-04
0E-03
0E-02
418AA
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Untitled
Abstract: No abstract text available
Text: SK 60 GB 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/" ): $ % +, -.
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Untitled
Abstract: No abstract text available
Text: SK 60 GAL 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/" ): $ % +, -.
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diode 7449
Abstract: IC 7449 rg 504 diode 11aC126v1
Text: SKiiP 11AC126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter , $3 : ,$3 1 ' 2 0
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11AC126V1
diode 7449
IC 7449
rg 504 diode
11aC126v1
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Untitled
Abstract: No abstract text available
Text: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK15B60D
O-247
1E-06
1E-05
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TO247C
Abstract: No abstract text available
Text: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK15B60D
O-247
AOK15B60D
1E-06
1E-05
TO247C
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Untitled
Abstract: No abstract text available
Text: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK15B60D
O-247
1E-06
1E-05
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semikron skiip 24 nab 125 t 12
Abstract: semikron skiip 81 AN 15 T
Text: SKiiP 37NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections
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37NAB12T4V1
37NAB12T4V1
semikron skiip 24 nab 125 t 12
semikron skiip 81 AN 15 T
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SEMIKRON SKIIP 11NAB126V1
Abstract: IC 7449
Text: SKiiP 11NAB126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper , $3 : ,$3 1 ' 2 0
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11NAB126V1
SEMIKRON SKIIP 11NAB126V1
IC 7449
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in5241
Abstract: IN5242 IN5239 IN5237 IN5228 in5231 D1N5226 IN5227 IN5233 IN5229
Text: FAIRCHILD SEMICONDUCTOR 04 DE~| 3 4 ^ 7 4 3469674 FAIRCHILD SEMICONDUCTOR 0QE74T3 84D 2 74 93 D— 1N5226 through 1N5257 F A IR C H IL D 500 mW Silicon Zener. Diodes A S c h lu m b e rg e r C o m p a n y T-W -O PACKAGES ABSOLUTE MAXIMUM RATINGS Note 1 All Devices
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0QE74T3
1N5226
1N5257
IN5242
IN5243
IN5244
IN5245
INS246
IN5247
IN5248
in5241
IN5239
IN5237
IN5228
in5231
D1N5226
IN5227
IN5233
IN5229
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EM 5135 diode
Abstract: 458a diode IN461A 1N459 equivalent T219 pn5139 pn5135 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
Text: FAIRCHILD SEMICO NDU CTO R 04 DE |34fc.citi74 0 0 H 7 4 S CI 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 74 59 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose Amplifiers
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iti74
PN5135/FTS05135
PN5136/FTS05136
PN5137/FTS05137
PN5135
PN5136
PN5137
FTS05135
FTS05136
FTS05137
EM 5135 diode
458a diode
IN461A
1N459 equivalent
T219
pn5139
FDSOI500
equivalent diode for 1n457
0/EM 5135 diode
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DL038D
Abstract: Scans-048 DL038 138A1 DSAGER00017 TGL DDR
Text: Vorläufige technische Daten In te rn a tion ale r V e rg le ich sty p : S N 74 L S 38 W 4 NA ND -Leistungsgatter mit offenem Kollektorausgang und je 2 Eingängen in L o w - Power-Schottky-Technologie Y - M jmessunqen in mm 14 13 12 ,j=L_e3L.CX^0 _0 _C1„£X„,
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Untitled
Abstract: No abstract text available
Text: rg Q uality I mcI uctor, I nc. High-Speed 3.3VCMC6 9_Bt x 4 Ports Multiple Bus Exchange wi th Bus Hoi d and Synchronous/ Asynchronous Controls q s 74 l c x h 9 o i in fo ar dmvAtio n FEATURES/BENEFITS DESCRIPTION • 5V-tolerant inputs and outputs • Bus Hold feature holds last active state during
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MDSL-00250-03
QS74LCXH901
QS74LCX
64-pin
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Untitled
Abstract: No abstract text available
Text: 4-1. Thyristors • T hyristo rs T r = 74 C 4 00 (1t u =15A) 500 T F 5 41 S -A (Rg* =470 0 ) 5.0 1.4 0.03 typ (1t u = 1 0 A ) 0.2 max 1.4 2.0 typ (|- m =5A ) 10 max - 4 0 to + 1 2 5 6 00 T F 5 61 S -A (Tc = 88 C ) 700 (R gk=470 0 ) TF3 21 M 200 300 TF3 41 M
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--10to
Tc-92
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kvp 68A
Abstract: XMR5 xlr10
Text: DIODES DIODES, HIGH VOLTAGE, AXIAL LEAD Standard — Fast — Ultra-Fast Recovery CURRENT VOLTS RECOVERY ns SURGE(A) SERIES PAGE STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD 300 5 25-35 15 12 10 8 5 3W HV EF, EG, EH EK EM EP ER
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350mA
600mA
200mA
175mA
150mA
100mA
500mA
300mA
125mA
kvp 68A
XMR5
xlr10
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