diode ry24
Abstract: UX-C2B diode zener RM25 FMPG5F fmgg2s FMPG2F RY24 RBV150S zener 3B2 RM25 zener diode
Text: Selection Guide Rectifier Diodes Type No. I F（AV） （A） VRM（V） 40 50 60 100 200 400 600 800 1,000 I FSM （A） SFPM-5＊ 0.9 2 4 30 SFPM-6＊ 1.0 2 4 45 AM01＊ 1.0 Z ― A 35 EM01＊ 1.0 Z ― A 45 EM 1＊ 1.0 Z ― A 45 EM 1＊ 1.0 EM 2＊ 1.2
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RZ1100
RZ1125
RZ1150
RZ1175
RZ1200
EZ0150
PZ127
PZ227
PZ427
PZ628
diode ry24
UX-C2B
diode zener RM25
FMPG5F
fmgg2s
FMPG2F
RY24
RBV150S
zener 3B2
RM25 zener diode
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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SKKH107
Abstract: No abstract text available
Text: SKKH 107/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 119 A Tc = 100 °C 91 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A²s Tj = 130 °C 18050 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor / Diode Modules
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E63532
SKKH107
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Untitled
Abstract: No abstract text available
Text: SKKH 107/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 119 A Tc = 100 °C 91 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A²s Tj = 130 °C 18050 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor / Diode Modules
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E63532
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Untitled
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT with Diode IXGH 31N60D1 IXGT 31N60D1 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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31N60D1
31N60D1
O-268
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: SK 20 GD 123 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 5-" 5'-" & &= $ 3 10 4!
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10istor
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Untitled
Abstract: No abstract text available
Text: SK 20 GH 123 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 5-" 5'-" & &= $ 3 10 4!
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10hyristor
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AOK20B135D1
Abstract: No abstract text available
Text: AOK20B135D1 1350V, 20A Alpha IGBT General Description TM with Diode Product Summary • Latest AlphaIGBT α IGBT technology • Best in Class VCE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI
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AOK20B135D1
O-247
1E-06
1E-05
AOK20B135D1
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Q67000-S078
Abstract: BS 107
Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information
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Q67000-S078
E6288
Q67000-S078
BS 107
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RG-107 diode
Abstract: marking BS Q67000-S078
Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information
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Q67000-S078
E6288
RG-107 diode
marking BS
Q67000-S078
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Untitled
Abstract: No abstract text available
Text: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27300
GB20XF60K
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Untitled
Abstract: No abstract text available
Text: APTC60AM18SC Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 18mΩ Ω max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM18SC
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Untitled
Abstract: No abstract text available
Text: APTC60DAM18CT Boost chopper SiC FWD diode Super Junction MOSFET Power Module NTC2 VBUS VBUS SENSE VDSS = 600V RDSon = 18mΩ Ω max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction
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APTC60DAM18CT
integration68
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QS5U13
Abstract: 2 Nch MOSFET
Text: QS5U13 Transistors Small switching 30V, 2.0A QS5U13 zExternal dimensions (Unit : mm) 2.8±0.2 (5) 0.3 to 0.6 1.0MAX 2.9±0.1 1.9±0.2 0.95 0.95 0.85±0.1 0.7±0.1 (4) 1.6± 0.2 0.1 zFeatures 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.
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QS5U13
QS5U13
2 Nch MOSFET
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1N770
Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Text: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695
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0DQQ333
1N695
500mA
25nded
MIL-S-19500,
1N770
1N910
1N911
1N695
1N695A
1N771
1N771A
1N771B
gold bonded germanium diode
BKC International
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Untitled
Abstract: No abstract text available
Text: Bulletin 12066/B International SRectifier 303C.C s e rie s SD FAST RECOVERY DIODES Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 2.0 ps recovery time ■ High voltage ratings up to 2500V 350A ■ High current capability
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12066/B
D0-200AA
D-661
SD303C.
D-662
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RG-107 diode
Abstract: IS801
Text: SIDAC Silicon Diode for Alternating Current SIDAC [F e a tu re s ] 1. S ym m etrical ch aracteristics. 2. Directly sw lcthing perform ance to com m ercial pow er sources and generating pulse by sim ple circuit. 3. The g lass p assivation ensures high reliability.
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1N3483
Abstract: Germanium diode D3E diode 1N3469 gold bonded germanium diode 1N3470 1N34* diode 1N3592
Text: B K C INTERNATIONAL 30E D [•«Ml BKC International Electronics Inc. I-III V » ■ 117^03 GG D G 3 3 T 2. ■ -"pOI-O"/ 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 « TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES
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GGDD33T
1N3469
600mA
100uA
Cto85Â
MIL-S-19500,
1N3483
Germanium diode
D3E diode
1N3469
gold bonded germanium diode
1N3470
1N34* diode
1N3592
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diode 0a47
Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Text: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop
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117T1Ã
G1607
300mA
MIL-S-19500,
diode 0a47
DIODE OA91
OA95 diode
OA90 diode
oa47 diode
DIODE OA90
OA91 diode
OA1182
0a47
diode germanium oa95
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Untitled
Abstract: No abstract text available
Text: B K C INTERNATIONAL 30E D B€ • Î I T ^ Û B D0003ES 2 ■ 'T 'O l - ö ”? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc. Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE
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D0003ES
1N60A
150mA
MIL-S-19500,
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Untitled
Abstract: No abstract text available
Text: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90
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IXGH39N60BD1
O-247
125CC,
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DSAIH0002536
Abstract: 1N3468
Text: B K C INTERNATIONAL 03E D | 117^03 DODOES! Type No. 1N3468 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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1N3468
MIL-S-19500,
DSAIH0002536
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n634
Abstract: No abstract text available
Text: B K C INTERNATIONAL 03 E D I □□□□214 4 J -' Type No. 1 N634 / - GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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MIL-S-19500,
n634
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1N81
Abstract: DSAIH0002542
Text: B K C INTERNATIONAL 03E D I DOQOOTb T ' Type No. 1N81 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 û /- û 5 7 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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MIL-S-19500,
1N81
DSAIH0002542
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