Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RG 2006 10A 600V Search Results

    RG 2006 10A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BCR10CS-12LBT1#BH0 Renesas Electronics Corporation 600V-10A-Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR10CS-12LBA1#BH0 Renesas Electronics Corporation 600V-10A-Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR10CS-12LB#BH0 Renesas Electronics Corporation 600V-10A-Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR10FM-12LB#BH0 Renesas Electronics Corporation 600V - 10A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR10CM-12LB#BH0 Renesas Electronics Corporation 600V - 10A - Triac Medium Power Use Visit Renesas Electronics Corporation

    RG 2006 10A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA49372

    Abstract: 20N60A4 equivalent
    Text: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC TA49372 20N60A4 equivalent

    Untitled

    Abstract: No abstract text available
    Text: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC

    RG 2006 10A 600V

    Abstract: HTP20-600 triac 20a rms triac to220
    Text: HTP20-600 HTP20-600 600V 20A TRIAC VDRM = 600 V IT RMS = 20A FEATURES 2.T2 Symbol ‰ Repetitive Peak Off-State Voltage: 600V ‰ R.M.S On-state Current (IT(RMS)=20A) ‰ High Commutation dv/dt 3.Gate 1.T1 1. T1 2. T2 3. Gate General Description The TRIAC HTP20-600 is suitable for AC switching application, phase


    Original     		PDF HTP20-600 HTP20-600 50/60Hz, O-220) RG 2006 10A 600V triac 20a rms triac to220

    RG 2006 10A 600V

    Abstract: GF10NB60SD STGF10NB60SD JESD97 SCHEMATIC igbt dimmer SCHEMATIC dimmer igbt gf10nb60 SCHEMATIC dimmer control
    Text: STGF10NB60SD N-channel 10A - 600V - TO-220FP PowerMESH IGBT General features Type VCES STGF10NB60SD 600V IC VCE sat (Max)@ 25°C @100°C <1.8V 7A • Hight input impedance (voltage driven) ■ Low on-voltage drop ■ High current capability ■ Co-packaged with turboswitch™ antiparallel


    Original     		PDF STGF10NB60SD O-220FP RG 2006 10A 600V GF10NB60SD STGF10NB60SD JESD97 SCHEMATIC igbt dimmer SCHEMATIC dimmer igbt gf10nb60 SCHEMATIC dimmer control

    P10NC60HD

    Abstract: STGB10NC60HD STGP10NC60HD JESD97 p10nc60 B10NC60HD to-247 to-220
    Text: STGB10NC60HD STGP10NC60HD N-CHANNEL 600V - 10A - TO-220 - D2PAK VERY FAST PowerMESH IGBT General features VCE sat IC (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A 3 3 1 • Lower on-voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction


    Original     		PDF STGB10NC60HD STGP10NC60HD O-220 O-220 P10NC60HD STGB10NC60HD STGP10NC60HD JESD97 p10nc60 B10NC60HD to-247 to-220

    gp10nc60hd

    Abstract: gp10nc60 GB10NC60HD STGP10NC60HD
    Text: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1


    Original     		PDF STGB10NC60HD STGP10NC60HD O-220 O-220 gp10nc60hd gp10nc60 GB10NC60HD STGP10NC60HD

    p10nk60

    Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
    Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V


    Original     		PDF STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP STW10NK60Z O-220/FP O-247 STB10NK60Z-1 STB10NK60Z p10nk60 p10nk60z p10nk60zfp B10n

    p10nk60

    Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
    Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V


    Original     		PDF STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP STW10NK60Z O-220/FP O-247 STB10NK60Z-1 STB10NK60Z STP10NK60ZFP p10nk60 p10nk60zfp VDD-300 B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z

    f11nm60

    Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
    Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V


    Original     		PDF STD11NM60N STD11NM60N-1 STP11NM60N STF11NM60N O-220 O-220FP- STD11NM60N STP11NM60N f11nm60 F11NM60N p11nm60n STD11NM60N-1 p11nm60 JESD97 STF11NM60N

    B20NM60D

    Abstract: JESD97 STB20NM60D
    Text: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge


    Original     		PDF STB20NM60D B20NM60D JESD97 STB20NM60D

    F11NM60N

    Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
    Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V


    Original     		PDF STD11NM60N STD11NM60N-1 STP11NM60N STF11NM60N O-220 O-220FP- STD11NM60N STP11NM60N F11NM60N f11nm60 p11nm60 JESD97 STD11NM60N-1 STF11NM60N f11n

    GP10NC60KD

    Abstract: gb10nc60kd JESD97 STGB10NC60K STGB10NC60KDT4 STGP10NC60K STGP10NC60KD
    Text: STGB10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K 600V 600V <2.5V <2.5V 10A 10A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction


    Original     		PDF STGB10NC60K STGP10NC60K O-220 GP10NC60KD gb10nc60kd JESD97 STGB10NC60K STGB10NC60KDT4 STGP10NC60K STGP10NC60KD

    GP10NC60H

    Abstract: JESD97 STGP10NC60H RG 2006 10A 600V
    Text: STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT General features Type VCES STGP10NC60H 600V IC VCE sat (Max)@ 25°C @100°C < 2.5V 10A • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■


    Original     		PDF STGP10NC60H O-220 GP10NC60H JESD97 STGP10NC60H RG 2006 10A 600V

    GW30NC60WD

    Abstract: stgw30nc60wd IGBT STGW30NC60WD schematic diagram UPS inverter JESD97
    Text: STGW30NC60WD N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60WD 600V < 2.5V 30A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility)


    Original     		PDF STGW30NC60WD O-247 GW30NC60WD stgw30nc60wd IGBT STGW30NC60WD schematic diagram UPS inverter JESD97

    w20nm60

    Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP w20nm60 w20nm60fd P20NM60FD F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST

    RG 2006 10A 600V

    Abstract: No abstract text available
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP RG 2006 10A 600V

    W20NM60

    Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
    Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60FD STP20NM60FD STW20NM60FD O-220 O-220FP O-247 O-247 W20NM60 w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST

    GP10NC60KD

    Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
    Text: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V


    Original     		PDF STGB10NC60KD STGF10NC60KD STGP10NC60KD O-220 O-220FP STGF10NC60KD O-220 GP10NC60KD STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking gp10nc60

    30V 20A power p MOSFET

    Abstract: FCB20N60F FCB20N60FTM
    Text: TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Farichild’ s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


    Original     		PDF FCB20N60F 30V 20A power p MOSFET FCB20N60F FCB20N60FTM

    fca20n60

    Abstract: N-Channel mosfet 600v ir 600V 20A N-Channel MOSFET TO-3P
    Text: SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


    Original     		PDF FCH20N60 FCA20N60 FCA20N60 110pF) N-Channel mosfet 600v ir 600V 20A N-Channel MOSFET TO-3P

    N-Channel mosfet 600v ir

    Abstract: FCA20N60 RG 2006 10A 600V F109 FCH20N60 N-Channel mosfet 600v 20A 600V 20A N-Channel MOSFET TO-3P
    Text: SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


    Original     		PDF FCH20N60 FCA20N60 FCA20N60 N-Channel mosfet 600v ir RG 2006 10A 600V F109 N-Channel mosfet 600v 20A 600V 20A N-Channel MOSFET TO-3P

    APT0406

    Abstract: APT0501 APT0502 APTM100H45SCTG
    Text: APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS


    Original     		PDF APTM100H45SCTG APT0406 APT0501 APT0502 APTM100H45SCTG

    Untitled

    Abstract: No abstract text available
    Text: APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B G2 G4 S2 S4 0/VBUS


    Original     		PDF APTM100H45SCTG

    600v 10A ultra fast recovery diode

    Abstract: FCB20N60F mosfet 10a 600v 10a 400V ultra fast diode d2pak N-Channel mosfet 600v 20A FCB20N60FTM
    Text: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


    Original     		PDF FCB20N60F 160ns FCB20N60F 600v 10A ultra fast recovery diode mosfet 10a 600v 10a 400V ultra fast diode d2pak N-Channel mosfet 600v 20A FCB20N60FTM