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Abstract: No abstract text available
Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless
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RFS1006
RFS1006
24-pin
DRFS-1006-0DSH
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RFS1006
Abstract: 3436
Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for
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RFS1006
RFS1006
DRFS-1006-0DSH
3436
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Untitled
Abstract: No abstract text available
Text: Application Note RFS1006-AN1 #RRNKECVKQP0QVGHQT4 5'XCNWCVKQP$QCTF 2QYGT 5GSWGPEKPI 6JG 4(5 RQYGT CORNKHKGT KU C C#U /'5('6 2# CPF TGSWKTGU DQVJ C RQUKVKXG FTCKP CPF PGICVKXG ICVG XQNVCIG 4GHGT VQ VJG DQCTF NC[QWV FKCITCO KPFKECVKPI XQNVCIG ITQWPF CPF 4( EQPPGEVQTU HQT RTQRGT EQPPGEVKQP 2TQRGT RQYGT WR CPF
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RFS1006-AN1
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PRFS-1006-0005
Abstract: PRFS-1006-0006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0EVL RFS1006
Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless
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RFS1006
RFS1006
PRFS-1006-0005
PRFS-1006-0006
PRFS-1006-0007
PRFS-1006-0008
PRFS-1006-0009
PRFS-1006-0EVL
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C1027
Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
Text: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF
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RFS1006-AN1
RFS1006
J1004
C1027
transistor c1027
c1027 transistor
C1032
C1007
tp1002
tp1006
TP1003
C1015 transistor
C1018
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3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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