RFG1M20180
Abstract: rfmd envelope tracking bpt06
Text: RFMD . High-Power GaN Broadband Power Transistors BPT RFMD’s high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. This series of BPTs are therefore ideal for constant envelope, pulsed,
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700MHz
RFG1M20180
rfmd envelope tracking
bpt06
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology Single Circuit for 1.9GHz to 2.2GHz 48V Operation Typical Performance
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RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
RFG1M20090
DS130506
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Untitled
Abstract: No abstract text available
Text: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features EDGE Large Signal Polar Modulation Compatible Power Margin for Flexible Tuning GSM850 Efficiency: 54% EGSM900 Efficiency: 56%
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RF3225QuadBand
RF3225
GSM850
EGSM900
DCS1800
PCS1900
RF3225
RF3225TR13
RF3225TR7
EIA-481.
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RF3225
Abstract: mobile phone antenna RF3225TR polar modulation
Text: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features EDGE Large Signal Polar Modulation Compatible Power Margin for Flexible Tuning GSM850 Efficiency: 54% EGSM900 Efficiency: 56%
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RF3225QuadBand
RF3225
GSM850
EGSM900
DCS1800
PCS1900
RF3225
RF3225TR13
RF3225TR7
EIA-481.
mobile phone antenna
RF3225TR
polar modulation
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Untitled
Abstract: No abstract text available
Text: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features EDGE Large Signal Polar Modulation Compatible Power Margin for Flexible Tuning GSM850 Efficiency: 54% EGSM900 Efficiency: 56%
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RF3225
RF3225QuadBand
GSM850
EGSM900
DCS1800
PCS1900
RF3225
RF3225TR13
RF3225TR7
EIA-481.
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RF3225
Abstract: rAised cosine FILTER 3G Power Amplifier Module for GSM DCS1800 EGSM900 GSM1800 GSM900 PCS1900 RF3225TR7 polar architecture
Text: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features EDGE Large Signal Polar Modulation Compatible Power Margin for Flexible Tuning GSM850 Efficiency: 54% EGSM900 Efficiency: 56%
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RF3225
RF3225QuadBand
GSM850
EGSM900
DCS1800
PCS1900
RF3225
EIA-481.
DS101111
rAised cosine FILTER 3G
Power Amplifier Module for GSM
GSM1800
GSM900
RF3225TR7
polar architecture
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed
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RFG1M20090
RFG1M20090
DS130823
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RF3228
Abstract: No abstract text available
Text: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 Applications Battery Powered 3G
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RF3228
00mmx6
00mmx1
RF3228
J-STD-033.
RF3228TR13
RF3228TR7
DS110819
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Untitled
Abstract: No abstract text available
Text: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features Applications
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RF3228
00mmx6
00mmx1
GSM850/EGSM900/DCS/
J-STD-033.
RF3228TR13
RF3228TR7
DS110819
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RF3228
Abstract: Multiband RF Transceiver 2500 MHz RF3228PCBA-410
Text: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS Package Style: Module, 7.00 mm x 6.00 mm x 1.00 mm Features EDGE Large Signal Polar Modulation Compatible Three High Linearity, Low Loss, UMTS Switch Ports
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RF3228
GSM850
EGSM900
DCS1800
PCS1900
GSM850/EGSM900/DCS/
J-STD-033.
RF3228TR13
RF3228TR7
DS110124
RF3228
Multiband RF Transceiver 2500 MHz
RF3228PCBA-410
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RF3171TR13
Abstract: GMSK wireless data transmission RF3171 DCS1800 DCS1900 EGSM900 GSM900 PCS1900 polar architecture 8PSK BLOCK DIAGRAM
Text: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 20 W3 Bias and Power Control VBATT 5 VCTL4 6 Switch
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RF3171
00mmx6
00mmx1
EIA-481.
DS100517
RF3171TR13
GMSK wireless data transmission
RF3171
DCS1800
DCS1900
EGSM900
GSM900
PCS1900
polar architecture
8PSK BLOCK DIAGRAM
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Untitled
Abstract: No abstract text available
Text: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features 20 W3 Bias and Power Control
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RF3171
00mmx6
00mmx1
EIA-481.
DS110216
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RF3171TR13
Abstract: polar modulation
Text: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 20 W3 Bias and Power Control VBATT 5 VCTL4 6 Switch
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RF3171
00mmx6
00mmx1
RF3171
RF3171TR13
RF3171TR7
EIA-481.
DS110216
polar modulation
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS110406
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RFG1M20180
Abstract: ATC800B820JT
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
ATC800B820JT
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BW030
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power>90W Advanced Heat-Sink Technology
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RFG1M20090
RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS110620
BW030
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ATC800B680JT
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology
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RFG1M20090
RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS120418
ATC800B680JT
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology Single Circuit for 1.9GHz to
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RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS120418
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PDF
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RF9810
Abstract: rf98
Text: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% Integrated VBATT Tracking Circuit for Improved Switching Spectrum
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RF9810
63mmx5
24mmx1
B34/39
25dBm
GSM850/EGSM900
DCS1800/PCS1900
RF9810TR13
RF9810TR7
EIA-481.
RF9810
rf98
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Untitled
Abstract: No abstract text available
Text: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA Proven PowerStar Architecture Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Integrated VBATT Tracking Circuit
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RF9810
GSM850/EGSM900
DCS1800/PCS1900
RF716x
RF9801/2
EIA-481.
GSM850/EGSM900/DCS1800/PCS1900
RF9810SB
RF9810PCBA-41X
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Untitled
Abstract: No abstract text available
Text: RF7177 RF7177DualBand EGSM900/DC S1800 TxM with Integrated Receive SAW Filters DUAL-BAND EGSM900/DCS1800 TXM WITH INTEGRATED RECEIVE SAW FILTERS Package: Module 6.63 mm x 7.25 mm 1.0 mm Features Single Module Placement SMPL
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RF7177
RF7177DualBand
EGSM900/DC
S1800
EGSM900/DCS1800
DS100615
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RF7178
Abstract: RF7178TR13 EGSM900 JESD22-A114 S1800 RF717 phone circuit rfmd envelope tracking
Text: RF7177 RF7177DualBand EGSM900/DC S1800 TxM with Integrated Receive SAW Filters DUAL-BAND EGSM900/DCS1800 TXM WITH INTEGRATED RECEIVE SAW FILTERS Package: Module 6.63 mm x 7.25 mm 1.0 mm Features Single Module Placement SMPL
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RF7177
RF7177DualBand
EGSM900/DC
S1800
EGSM900/DCS1800
DS100615
RF7178
RF7178TR13
EGSM900
JESD22-A114
RF717
phone circuit
rfmd envelope tracking
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Untitled
Abstract: No abstract text available
Text: RF3194 RF3194QuadBand GSM power amp module QUAD-BAND GSM POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features Power Margin for Flexible Tuning GSM850 Efficiency: 55.5% EGSM900 Efficiency: 57% DCS1800 Efficiency: 51% PCS1900 Efficiency: 53%
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RF3194
RF3194QuadBand
00mmx5
00mmx1
GSM850
EGSM900
DCS1800
PCS1900
RF3194
RF3194TR13
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GMSK applications
Abstract: RF3194
Text: RF3194 RF3194QuadBand GMSK power amp module QUAD-BAND GMSK POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features Power Margin for Flexible Tuning GSM850 Efficiency: 54% EGSM900 Efficiency: 56% DCS1800 Efficiency: 49% PCS1900 Efficiency: 51%
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RF3194QuadBand
RF3194
00mmx5
00mmx1
GSM850
EGSM900
DCS1800
PCS1900
RF3194
RF3194TR13
GMSK applications
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