265-D
Abstract: PLL 2400 MHZ
Text: HMC1190LP6GE v00.0912 TRANSCEIVERS - Rx RFICs BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 gHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching • Multiband/Multi-standard Cellular BTS Diversity Receivers
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HMC1190LP6GE
HMC1190LP6GE
265-D
PLL 2400 MHZ
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H1190
Abstract: PLL 2400 MHZ
Text: HMC1190LP6GE v01.1112 TRANSCEIVERS - Rx RFICs - SMT BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 gHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
H1190
PLL 2400 MHZ
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Untitled
Abstract: No abstract text available
Text: HMC1190LP6GE v01.1112 TRANSCEIVERS - Rx RFICs - SMT BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
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Untitled
Abstract: No abstract text available
Text: HMC1190LP6GE v02.0213 TRANSCEIVERS - Rx RFICs BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
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Untitled
Abstract: No abstract text available
Text: HMC1190LP6GE v06.1113 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
HMC384LP4E
HMC384LP4E
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H1190
Abstract: No abstract text available
Text: HMC1190LP6GE v05.0913 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
HMC384LP4E
HMC384LP4E
H1190
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Untitled
Abstract: No abstract text available
Text: HMC1190LP6GE v03.0513 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
HMC384LP4E
HMC384LP4E
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ATC100B160JT500XT
Abstract: ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
ATC100B160JT500XT
ESMG
FREESCALE PACKING
rfics marking 5
JESD22
MRF5S9070NR1
A113
A114
A115
AN1955
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MRF5S9070NR
Abstract: No abstract text available
Text: Document Number: MRF5S9070NR1 Rev. 7, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
MRF5S9070NR
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage
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MW4IC915N
MW4IC915NB/GNB
MW4IC915NBR1
MW4IC915GNBR1
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
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AN215A
Abstract: z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
AN215A
z15 Diode glass
diode marking c34
Z15 marking diode
2.4 agc 130 watts power amplifier schematic
marking us capacitor pf l1
marking Z4
A113
AN1907
AN211A
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31063 A
Abstract: diode marking c2 sma Hewlett-Packard transistor microwave INA-31063 a006 INA-31063-BLK rfics marking 5 sc-70 package pcb layout LL2012-F NF50
Text: DC – 2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier Technical Data INA-31063 Features • High Reverse Isolation -40 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • Single +3V Supply • 15 dB |S21|2 at 1.9 GHz • 200 Ω Output Impedance • Ultra-Miniature Package
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INA-31063
OT-363
SC-70)
INA-31063
5967-5770E
31063 A
diode marking c2 sma
Hewlett-Packard transistor microwave
a006
INA-31063-BLK
rfics marking 5
sc-70 package pcb layout
LL2012-F
NF50
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INA-31063
Abstract: 31063 A marking 579 sot363 AN-A006 a006 ANA004R INA-31063-BLK LL2012-F NF50
Text: DC – 2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier Technical Data INA-31063 Features • High Reverse Isolation -40 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • Single +3V Supply • 15 dB |S21|2 at 1.9 GHz • 200 Ω Output Impedance • Ultra-Miniature Package
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INA-31063
OT-363
SC-70)
INA-31063
5967-5770E
5968-1238E
31063 A
marking 579 sot363
AN-A006
a006
ANA004R
INA-31063-BLK
LL2012-F
NF50
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HMC500LP3
Abstract: 27 31 GHz HPA HMC500LP3E
Text: HMC500LP3 / 500LP3E v01.0705 GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz Typical Applications Features The HMC500LP3 / HMC500LP3E is ideal for: 360° of Continuous Phase Control • Wireless Infrastructure HPA & MCPA Error Correction Continuous Gain Control: 40 dB
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HMC500LP3
500LP3E
HMC500LP3E
HMC500LP3
27 31 GHz HPA
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Untitled
Abstract: No abstract text available
Text: HMC597LP4 / 597LP4E v07.1213 Demodulators - SMT SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +23 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G
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HMC597LP4
597LP4E
HMC597LP4E
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Untitled
Abstract: No abstract text available
Text: HMC597LP4 / 597LP4E v06.0613 Demodulators - SMT SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G
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HMC597LP4
597LP4E
HMC597LP4E
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HMC500LP3E
Abstract: HMC500LP3
Text: HMC500LP3 / 500LP3E v01.0705 GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz Typical Applications Features The HMC500LP3 / HMC500LP3E is ideal for: 360° of Continuous Phase Control • Wireless Infrastructure HPA & MCPA Error Correction 40 dB of Continuous Gain Control
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HMC500LP3
500LP3E
HMC500LP3E
HMC500LP3
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HMC500LP3
Abstract: 27 31 GHz HPA HMC500LP3E
Text: HMC500LP3 / 500LP3E v02.1109 GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz Typical Applications Features The HMC500LP3 E is ideal for: 360° of Continuous Phase Control • Wireless Infrastructure HPA & MCPA Error Correction Continuous Gain Control: 40 dB • Pre-Distortion or Feed-Forward Linearization
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HMC500LP3
500LP3E
27 31 GHz HPA
HMC500LP3E
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Untitled
Abstract: No abstract text available
Text: HMC597LP4 / 597LP4E v05.0712 DemoDulators - smt SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features the HmC597lP4 / HmC597lP4e is suitable for various modulation systems: High linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G
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HMC597LP4
597LP4E
HMC597LP4E
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31063 A
Abstract: No abstract text available
Text: What H E W L E T T 1"KM PA C K A R D DC-2 .5 GHz 3 V, High Isolation Silicon RFIC Amplifier Technical Data INA-31063 Features • High R everse Isolation -40 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • Single +3V Supply • 15 dB |S21|2 at 1.9 GHz
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INA-31063
OT-363
SC-70)
31063 A
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Evaluation PCB 115775
Abstract: QFN PACKAGE thermal resistance
Text: HMC597LP4 / 597LP4E v05.0712 Demodulators - SMT SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz Typical Applications Features The HMC597LP4 / HMC597LP4E is suitable for various modulation systems: High Linearity: +25 dBm IIP3 & +60 dBm IIP2 • Cellular/PCS/3G
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HMC597LP4
597LP4E
HMC597LP4E
Evaluation PCB 115775
QFN PACKAGE thermal resistance
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Untitled
Abstract: No abstract text available
Text: HMC500LP3 / 500LP3E v02.1109 Typical Applications Features The HMC500LP3 E is ideal for: 360° of Continuous Phase Control • Wireless Infrastructure HPA & MCPA Error Correction Continuous Gain Control: 40 dB • Pre-Distortion or Feed-Forward Linearization
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HMC500LP3
500LP3E
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Untitled
Abstract: No abstract text available
Text: HMC500LP3 / 500LP3E v01.0705 GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz Typical Applications Features The HMC500LP3 / HMC500LP3E is ideal for: 360° of Continuous Phase Control • Wireless Infrastructure HPA & MCPA Error Correction 40 dB of Continuous Gain Control
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HMC500LP3
500LP3E
HMC500LP3E
HMC500LP3
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