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    RFD8P Price and Stock

    Rochester Electronics LLC RFD8P06LE

    P-CHANNEL POWER MOSFET
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    DigiKey RFD8P06LE Bulk 7,200 919
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    RFD8P06LE Bulk 1,753 919
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    Rochester Electronics LLC RFD8P05SM9A

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD8P05SM9A Bulk 3,171 325
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    Rochester Electronics LLC RFD8P05SM9AS2463

    MOSFET P-CH 50V 8A
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    DigiKey RFD8P05SM9AS2463 Bulk 2,500 650
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    Rochester Electronics LLC RFD8P06E

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD8P06E Bulk 2,278 952
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    Rochester Electronics LLC RFD8P03LSM96

    RFD8P03LSM96
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    DigiKey RFD8P03LSM96 Bulk 1,800 392
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    Find more RFD8P price and stock on Findchips.com

    RFD8P Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD8P03L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD8P03LSM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD8P05 Fairchild Semiconductor 8A, 50V, 0.300 Ohm, P-Channel Power MOSFET Original PDF
    RFD8P05 Intersil 8A, 50V, 0.300 ?, P-Channel Power MOSFETs Original PDF
    RFD8P05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD8P05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFD8P05 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD8P05SM Fairchild Semiconductor 8A, 50V, 0.300 Ohm, P-Channel Power MOSFET Original PDF
    RFD8P05SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RFD8P05SM Intersil 8A, 50V, 0.300 ?, P-Channel Power MOSFETs Original PDF
    RFD8P05SM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD8P05SM Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFD8P05SM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD8P05SM9A Fairchild Semiconductor 8A, 50V, 0.300 Ohm, P-Channel Power MOSFET Original PDF
    RFD8P05SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD8P06 Intersil 8A, 60V, 0.300 ?, P-Channel Power MOSFETs Original PDF
    RFD8P06E Fairchild Semiconductor 8A, 60V, 0.300 Ohm, P-Channel Power MOSFET Original PDF
    RFD8P06E Harris Semiconductor 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFD8P06E Intersil 8A, 60V, 0.300 ?, P-Channel Power MOSFETs Original PDF
    RFD8P06E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RFD8P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d8p05

    Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
    Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		PDF RFD8P05, RFD8P05SM, RFP8P05 TA09832. d8p05 RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842

    8A60V

    Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 8A60V RFD8P06E RFD8P06ESM9A TB334 bv254

    RFD8P06LESM9A

    Abstract: f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet January 2002 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		PDF RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. 175oC RFD8P06LESM9A f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4

    D8P05

    Abstract: RFD8P05SM RFD8P05 RFD8P05SM9A RFP8P05 TB334
    Text: RFD8P05, RFD8P05SM, RFP8P05 Semiconductor -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		PDF RFD8P05, RFD8P05SM, RFP8P05 D8P05 RFD8P05SM RFD8P05 RFD8P05SM9A RFP8P05 TB334

    D8P05

    Abstract: RFD8P05 RFD8P05SM RFD8P05SM9A RFP8P05 TB334
    Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs • 8A, 50V Formerly developmental type TA09832. • rDS ON = 0.300Ω • UIS SOA Rating Curve • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF RFD8P05, RFD8P05SM, RFP8P05 TA09832. TB334 D8P05 RFD8P05 RFD8P05SM RFD8P05SM9A RFP8P05 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06ESM Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)48# Minimum Operating Temp (øC)-55


    Original     		PDF RFD8P06ESM

    Logic Level p-Channel Power MOSFET

    Abstract: 08E4 pspice ESD
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet Title FD8 6LE D8 6LE M, P8P LE bt A, V, 00 m, D ted, gic vel, an- July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,


    Original     		PDF RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. Logic Level p-Channel Power MOSFET 08E4 pspice ESD

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E O-220AB O-251AA RFD8P06ESM RFP8P06E 49e-10 1e-30 RFD8P06E RFD8P06ESM9A IS415 BV202 D8P06

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E RFD8P06E RFD8P06ESM9A TB334

    RFD8P06LESM9A

    Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model


    Original     		PDF RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. 175oC RFD8P06LESM9A m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2

    RFD8P06LE

    Abstract: RFD8P06LESM RFD8P06LESM9A RFP8P06LE 30e2
    Text: S E M I C O N D U C T O R RFD8P06LE, RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET July 1997 Features Description • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,


    Original     		PDF RFD8P06LE, RFD8P06LESM, RFP8P06LE 1-800-4-HARRIS RFD8P06LE RFD8P06LESM RFD8P06LESM9A RFP8P06LE 30e2

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)48# Minimum Operating Temp (øC)-55


    Original     		PDF RFD8P06E

    Untitled

    Abstract: No abstract text available
    Text: RFD8P05 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)8# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ


    Original     		PDF RFD8P05

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E 175oC TB334

    D8P05

    Abstract: RFD8P05 RFP8P05 RFD8P05SM RFD8P05SM9A TB334 JEDEC TO-251AA
    Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet January 2002 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    Original     		PDF RFD8P05, RFD8P05SM, RFP8P05 TA09832. D8P05 RFD8P05 RFP8P05 RFD8P05SM RFD8P05SM9A TB334 JEDEC TO-251AA

    Untitled

    Abstract: No abstract text available
    Text: RFD8P05SM Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)8# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ


    Original     		PDF RFD8P05SM

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E 0-300i2 49e-10 1e-30 48e-4 42e-7) 40e-3

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,


    OCR Scan     		PDF RFD8P06LESM, RFP8P06LE 0-300i2 1-800-4-HARRIS

    d8p05

    Abstract: No abstract text available
    Text: P *3 3 S RFD8P05, RFD8P05SM, RFP8P05 -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Description Features -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


    OCR Scan     		PDF RFD8P05, RFD8P05SM, RFP8P05 developmenta00 AN7254 AN7260. d8p05

    8A60V

    Abstract: rfp8p06e
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E AN7254 8A60V

    FP8P06E

    Abstract: 9l2i sclm PSPICE PLIC
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E fin H A R R IS U U S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D E C T 0 -2 2 0 A B • BA, 6 0 V • SOURCE^. r DS ON = 0.3 0 0 U


    OCR Scan     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 1e-30 48e-4 42e-7) 40e-3 FP8P06E 9l2i sclm PSPICE PLIC

    D8P05

    Abstract: rfp8p05 625Q TA09832
    Text: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,


    OCR Scan     		PDF RFD8P05, RFD8P05SM, RFP8P05 TA09832. AN7254 AN7260. D8P05 rfp8p05 625Q TA09832