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    RF TRANSISTOR S PARAMETERS Search Results

    RF TRANSISTOR S PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR S PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W


    OCR Scan     		PDF 2SC4624 2SC4624 900MHz. 800-900MHz 900MHz

    2sc4624

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W


    OCR Scan     		PDF 2SC4624 2SC4624 900MHz. 800-900MHz 900MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, 2SC4525

    27mhz rf ic

    Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,


    OCR Scan     		PDF 2SC1944 2SC1944 27MHz, T0-220 27MHz 27mhz rf ic T30 transistor 27mhz transistor 27mhz rf amplifier T-30

    MRF247

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF247 The RF Line 75 W - 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r 1 2 .5 V o lt V H F large-signal am plifier applications N P N S IL IC O N in industrial and com m ercial FM equ ipm ent operating to 175 M H z.


    OCR Scan     		PDF MRF247 MRF247

    transistor BFR93

    Abstract: No abstract text available
    Text: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		PDF BFR93/BFR93R BFR93 BFR93R D-74025 31-Oct-97 transistor BFR93

    BFR91A

    Abstract: No abstract text available
    Text: TEMIC BFR91A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		PDF BFR91A BFR91A D-74025 31-Oct-97

    bfr91

    Abstract: No abstract text available
    Text: TEMIC BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •


    OCR Scan     		PDF BFR91 BFR91 D-74025 31-Oct-97

    ML 1557 b transistor

    Abstract: lm 1766 ic LM 748
    Text: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		PDF BFR90A BFR90A D-74025 31-Oct-97 ML 1557 b transistor lm 1766 ic LM 748

    lm 538 n ic

    Abstract: BFR90
    Text: TEMIC BFR90 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •


    OCR Scan     		PDF BFR90 BFR90 D-74025 31-Oct-97 lm 538 n ic

    Untitled

    Abstract: No abstract text available
    Text: TEMIC BFR96TS S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		PDF BFR96TS BFR96TS D-74025 31-Oct-97

    MRF233

    Abstract: transistor D 2499 akd n ad transistor K D 2499
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF233 The RF Line 15 W - 90 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . d e s ig n e d fo r 12.5 V o lt, m id -b a n d large-signal a m p lifie r a p p li­ ca tio n s in in d u s tria l and c o m m e rc ia l FM e q u ip m e n t o p e ra tin g in the


    OCR Scan     		PDF MRF233 MRF233 transistor D 2499 akd n ad transistor K D 2499

    2SC1972

    Abstract: 2SC1972 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 2 is a silicon N P N epitaxial planar type transistor de­ signed for RF power amplifiers on V H F Dimensions i band m obile radio applications. 03.6 ± 0.2


    OCR Scan     		PDF 2SC1972 2SC1972 2SC1972 equivalent

    MPS 4355 transistor

    Abstract: MM8009 mps 0737
    Text: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica­ tions in m ilitary and industrial equipment. Suitable for use as output,


    OCR Scan     		PDF MM8009/D MM8009 MPS 4355 transistor MM8009 mps 0737

    sl2 357

    Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
    Text: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency


    OCR Scan     		PDF BFP93A D-74025 31-Oct-97 sl2 357 ML 1557 b transistor telefunken P 152 MT a3 sot 343

    sl2 357

    Abstract: ML 1557 b transistor transistor MW 882
    Text: Temic BFP93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency


    OCR Scan     		PDF BFP93AW D-74025 07-Nov-97 sl2 357 ML 1557 b transistor transistor MW 882

    Untitled

    Abstract: No abstract text available
    Text: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain


    OCR Scan     		PDF BFQ65 21-Mar-97

    BFW92

    Abstract: No abstract text available
    Text: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92


    OCR Scan     		PDF BFW92 BFW92 D-74025 31-Oct-97

    SOT-23 marking 717

    Abstract: un 1044 Telefunken u 257
    Text: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain


    OCR Scan     		PDF BFR92/BFR92R BFR92 BFR92R D-74025 31-Oct-97 SOT-23 marking 717 un 1044 Telefunken u 257

    zo 107 NA P 611

    Abstract: BFR96 L 0403 817 BFR96T
    Text: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain


    OCR Scan     		PDF BFR96T BFR96T D-74025 31-Oct-97 zo 107 NA P 611 BFR96 L 0403 817

    mrf237

    Abstract: Transistor MRF237 TL 413 mrf237 transistor mrf237 MOTOROLA transistor 2SA 640 motorola mrf237 15MH arco 457 T463
    Text: M O T O R O L A MRF237 The R.F Line NPN SILICON RF POWER TRANSISTOR 4 W - 1 7 5 MHz . . . designed for 12.5 Vott large-signal power amplifier applications in communication equipment operating to 225 MHz. RF POWER TRANSISTOR NPN S IL IC O N • Specified 12.5 Vo lt, 175 MHz Characteristics —


    OCR Scan     		PDF 74-j21 63-i14 mrf237 Transistor MRF237 TL 413 mrf237 transistor mrf237 MOTOROLA transistor 2SA 640 motorola mrf237 15MH arco 457 T463

    transistor MAR 543

    Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
    Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91


    OCR Scan     		PDF BFR91 BFR91 24-Mar-97 transistor MAR 543 transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439

    BFQ65

    Abstract: mar 739 LINEAR/525/OS/LM01A/MAR 527 transistor
    Text: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • • • High power gain


    OCR Scan     		PDF BFQ65 21-Mar-97 BFQ65 mar 739 LINEAR/525/OS/LM01A/MAR 527 transistor

    BFQ65

    Abstract: mar 806 transistor MAR 826 mar 739
    Text: Tem ic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain


    OCR Scan     		PDF bfq65 21-Mar-97 mar 806 transistor MAR 826 mar 739