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    RF TRANSISTOR 9GHZ Search Results

    RF TRANSISTOR 9GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 9GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN9744

    Abstract: gilbert cell differential pair GILBERT CELL HFA3101 an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2


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    AN9744 HFA3101 AN9744 gilbert cell differential pair GILBERT CELL an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046 PDF

    HFA3101

    Abstract: sot36 transistor arrays 5v AN9744 Transistor Arrays NPN General Purpose Transistor gilbert cell differential pair
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors [ RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2


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    AN9744 HFA3101 sot36 transistor arrays 5v AN9744 Transistor Arrays NPN General Purpose Transistor gilbert cell differential pair PDF

    160711

    Abstract: 59018 transistor 5-1147 transistor 59018 123078 154543 39058 TARF1509U 59818 68207
    Text: Preliminary TARF1509U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1509U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package


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    TARF1509U OT-323 TARF1509U OT323 000GHz 200GHz 400GHz 600GHz 800GHz 160711 59018 transistor 5-1147 transistor 59018 123078 154543 39058 59818 68207 PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 PDF

    9744

    Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram HFA3127 PNP Transistor Arrays Intersil gilbert cell differential pair HFA3046 HFA3102
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays TM Application Note July 1997 Linear Arrays Have Advantages Over Discrete Transistors Q5 C1 1nF 5V - L1 1µH VO Q2 C3 1nF RL 50Ω RE 5.1Ω - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays over discrete transistors are


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    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 PDF

    RF Transistor s-parameter

    Abstract: transistor c 2316 Transistor s-parameter transistor 5457 transistor 9747 s-parameter s11 s12 s21 6558 d 1556 transistor FC4901 IC 7587
    Text: FC4901 NPN SILICON RF TRANSISTOR 描述 FC4901 是上海镭芯微电子有限公司生产的超高频低噪声晶体管,采用平面 NPN 硅外 延双极型工艺,具有高功率增益低噪声特性和 大动态范围。由于采用了超小型的 SOT-323


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    FC4901 OT-323 20mAf YK50-100 RF Transistor s-parameter transistor c 2316 Transistor s-parameter transistor 5457 transistor 9747 s-parameter s11 s12 s21 6558 d 1556 transistor FC4901 IC 7587 PDF

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF

    gilbert cell differential pair

    Abstract: HFA3101 pnp 8 transistor array 5.1 transistor amplifier circuit diagram AN9744 974-4 Transistor Array differential amplifier NPN PNP Transistor Arrays HFA3046 HFA3096
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note June 2004 Linear Arrays Have Advantages Over Discrete Transistors R4 100Ω R1 2kΩ Q4 Q5 R2 15kΩ RF 240Ω R3 1kΩ C1 1nF RS 50Ω VS 5V - L1 1µH VO Q2 C2 1nF + C3 1nF RL 50Ω


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    HFA3101 gilbert cell differential pair HFA3101 pnp 8 transistor array 5.1 transistor amplifier circuit diagram AN9744 974-4 Transistor Array differential amplifier NPN PNP Transistor Arrays HFA3046 HFA3096 PDF

    Dual Long-Tailed Pair Transistor Array

    Abstract: gilbert cell differential pair pnp 8 transistor array pnp array AN9744 HFA3046 HFA3096 HFA3101 HFA3102 HFA3127
    Text: Harris Semiconductor No. AN9744 Harris Linear July 1997 RF Up/Down Conversion Is Simplified By Linear Arrays Author: Ronald Mancini Linear Arrays Have Advantages Over Discrete Transistors tional transistors cost little because they take little space on the same piece of silicon. This multistage circuit configurations can be employed with linear arrays at a small additional


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    AN9744 1-800-4-HARRIS Dual Long-Tailed Pair Transistor Array gilbert cell differential pair pnp 8 transistor array pnp array AN9744 HFA3046 HFA3096 HFA3101 HFA3102 HFA3127 PDF

    AN11225

    Abstract: clapp oscillator
    Text: AN11225 Demonstration of a 1GHz discrete VCO based on the BFR92A Rev. 1.0 — 26 June 2012 Application note Document information Info Content Keywords Discrete, VCO, BFR92A, EVB, Design, Evaluation, Measurements Abstract This document provides an example of a discrete Voltage Controlled


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    AN11225 BFR92A BFR92A, BFR92A 100MHz. 20120626rs. AN11225 clapp oscillator PDF

    "vlsi technology" abstract for

    Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
    Text: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a


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    20GHz 30GHz, "vlsi technology" abstract for TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR PDF

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet PDF

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ PDF

    ic used in satellite receiver

    Abstract: schematic circuit board satellite tuner AN00003 MICROCAP BFG520 amplifier simulation circuit TDA8060A TDA8060TS PHILIPS tuner schematic Digital Satellite Receivers
    Text: Philips Semiconductors A wideband LNA using the BFG520 for satellite receivers Application Note AN00003 APPLICATION NOTE A wideband LNA using the BFG520 for satellite receivers AN00003 Author s : H. Maas Philips Semiconductors Systems Laboratory Eindhoven,


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    BFG520 AN00003 BFG520 TDA8060A BFG520/X 950MHz ic used in satellite receiver schematic circuit board satellite tuner AN00003 MICROCAP amplifier simulation circuit TDA8060A TDA8060TS PHILIPS tuner schematic Digital Satellite Receivers PDF

    MCR01MZsF

    Abstract: 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130
    Text: PRISM1KIT-EVAL DSSS PC Card Wireless LAN Description TM Application Note August 1999 AN9624.6 Authors: Carl Andren, Mike Paljug, and Doug Schultz Integrated RF Solutions, Inc. Introduction The PRISM1KIT-EVAL wireless LAN PC card is a complete wireless high


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    AN9624 MCR01MZsF 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130 PDF

    C1005COG1H101JT

    Abstract: Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor RF1K49093 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930
    Text: PRISM1KIT-EVAL DSSS PC Card Wireless LAN Description Application Note August 1999 AN9624.6 Authors: Carl Andren, Mike Paljug, and Doug Schultz Integrated RF Solutions, Inc. Introduction The PRISM1KIT-EVAL wireless LAN PC card is a complete wireless high


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    AN9624 HFA3925 HFA3424 HFA3724 ICL7660S RF1K49093 HFA3524A C1005COG1H101JT Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930 PDF

    transistor 9716

    Abstract: photodiode 10Ghz PIN
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


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    10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN PDF

    germanium photodiode PIN

    Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
    Text: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


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    10Gbps, 150mW -18dBm 90V/A MAX3970U/D OC-192 345mm) 864mm) germanium photodiode PIN photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz PDF

    transistor 9716

    Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


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    10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11 PDF

    2sc377

    Abstract: No abstract text available
    Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.


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    250mm 2SC3771 2SC3772 2SC3773 2SC377 2SC3775 2SC4269 2SC4270 2SC4364 2SC4365 PDF

    transistor kt 925

    Abstract: 2SC4365 2SC4072
    Text: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.


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    250mm racteristics/Ta-25 MT930617TR transistor kt 925 2SC4365 2SC4072 PDF

    sanyo tv tuner

    Abstract: 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4401 2SC4402 2SC4403 2SC4405 2SC4406
    Text: SA/Im VERY HIGH-FREQUENCY TRANSISTOR SERIES Ifcl Use * * * * Wide-band amplifiers UHF.VHF TV tuners CATV converters RF modulators ( )=Marking on MCP. CP, PCP. For PNP, (-)sign is omitted. P C : ( P a c k a g e :PCP) Mounted on PCB ( 2 50mm!X0. 8mm) Features *


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    250mm 2SC4401 2SC4402 2SC4403 2SC3776 2SC3777 2SC3778 2SC3779 QD24b07 MT980615TR sanyo tv tuner 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4405 2SC4406 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz


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    900MHz BFG196 Q62702-F1292 OT-223 900MHz PDF