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    RF TRANSISTOR 10-15 GHZ Search Results

    RF TRANSISTOR 10-15 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 10-15 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    RF Transistor s-parameter

    Abstract: RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2SC2570A RF TRANSISTOR 1.5 GHZ s-parameter RF POWER TRANSISTOR NPN RF Transistor s-parameter vhf low-noise amplifier 10GHZ TRANSISTOR 10GHZ Transistor s-parameter
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION •Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA


    Original     		PDF 2SC2570A 15mum RF Transistor s-parameter RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2SC2570A RF TRANSISTOR 1.5 GHZ s-parameter RF POWER TRANSISTOR NPN RF Transistor s-parameter vhf low-noise amplifier 10GHZ TRANSISTOR 10GHZ Transistor s-parameter

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO


    Original     		PDF MSC3130T1 r14525 MSC3130T1/D

    MSC3130T1

    Abstract: SMD310
    Text: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO


    Original     		PDF MSC3130T1 r14525 MSC3130T1/D MSC3130T1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO


    Original     		PDF MSC3130T1 MSC3130T1/D

    MSC3130T1

    Abstract: SMD310
    Text: MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max


    Original     		PDF MSC3130T1 r14525 MSC3130T1/D MSC3130T1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage VCBO 15 Vdc Collector−Emitter Voltage VCEO 10 Vdc Emitter−Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit


    Original     		PDF MSC3130T1 MSC3130T1/D

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FS TGF2819-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    transistor SMD p90

    Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-SG T2G6001528-SG TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-SG T2G6001528-SG TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4012036-FS T1G4012036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4012036-FL T1G4012036-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    Untitled

    Abstract: No abstract text available
    Text: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •


    Original     		PDF TGF3020-SM TGF3020-SM

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6003028-FS T2G6003028-FS TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6000528-Q3 T2G6000528-Q3 TQGaN25