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    RF SOT89 50 Search Results

    RF SOT89 50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    RF SOT89 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot89 stencil

    Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
    Text: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm


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    PDF 5989-0810EN sot89 stencil sot89 land pattern Loctite 218 RG200 substrate LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun

    RF3375

    Abstract: RF337XPCBA-41X
    Text: DRAFT RF3375 DRAFT RF3375General Purpose Amplifier GENERAL PURPOSE AMPLIFIER Package Style: SOT89 GND NOT FOR NEW DESIGNS Features  +28dBm Output IP3  +16.0dBm Output P1dB RF IN 1 Applications  Basestation Applications Broadband, Low-Noise Gain Blocks


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    PDF RF3375 RF3375General 6000MHz 28dBm RF3375 RF3375) DS101122 RF337XPCBA-41X

    C1005C0G1H101JT000F

    Abstract: Murata Moca 0402CS-5N6XJL
    Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at


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    PDF RF3315Broadband RF3315 200MHz 2200MHz 41dBm 900MHz 25dBm 900MHz RF3315 C1005C0G1H101JT000F Murata Moca 0402CS-5N6XJL

    Untitled

    Abstract: No abstract text available
    Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at


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    PDF RF3315 RF3315Broadband 200MHz 2200MHz 41dBm 900MHz 25dBm RF3315 DS120530

    TK11230CM

    Abstract: TK11230CU
    Text: POWER&RF Io=300mA bipolar LDO regulator IC Io=300mA バイポーラ低飽和レギュレータIC TK112XXCM TK112XXCU TK113XXCM SOT23L-6 (SOT89-5) (SOT23L-6) DESCRIPTION The TK112XXCM type, the TK112XXCU type and the TK113XXCM type are bipolar LDO regulator ICs. The


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    PDF 300mA TK112XXCM OT23L-6) TK112XXCU OT89-5) TK113XXCM TK112XXCM TK112XXCU TK11230CM TK11230CU

    SON2017-6

    Abstract: TK705XX
    Text: POWER&RF Io=100mA bipolar LDO regulator IC Io=100mA バイポーラ低飽和レギュレータIC TK705XXS TK706XXH SOT23-5 (SON2017-6) DESCRIPTION The TK705XXS type, the TK706XXH type are bipolar LDO regulator ICs. The packages are SOT23L-6 and SOT89-5.


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    PDF 100mA TK705XXS OT23-5) TK706XXH SON2017-6) TK705XXS TK706XXH OT23L-6 OT89-5. SON2017-6 TK705XX

    TK11230CM

    Abstract: TK11230CU TK112XXCU TK113xxCM
    Text: POWER&RF Io=300mA bipolar LDO regulator IC Io=300mA バイポーラ低飽和レギュレータIC TK112xxCM TK112xxCU TK113xxCM SOT23L-6 (SOT89-5) (SOT23L-6) DESCRIPTION The TK112xxCM type, the TK112xxCU type and the TK113xxCM type are bipolar LDO regulator ICs. The


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    PDF 300mA TK112xxCM OT23L-6) TK112xxCU OT89-5) TK113xxCM TK112xxCM TK112xxCU TK11230CM TK11230CU TK113xxCM

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    PDF BFU590Q BFU590Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    PDF BFU580Q BFU580Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    PDF BFU590Q BFU590Q AEC-Q101 BFU590QX

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


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    PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    3303R

    Abstract: 39 77 in sot-89 package AGB3303RS24Q1 AGB3303 AGB3303S24Q1 agb3303r
    Text: AGB3303 50Ω High Linearity Low Noise Wideband Gain Block Data Sheet - Rev 2.1 FEATURES • DC-4500 MHz Operation Bandwidth • +39 dBm Output IP3 at 850 MHz • 4 dB Noise Figure at 850 MHz • 21 dB Gain at 850 MHz • +19 dBm P1dB • SOT-89 Package •


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    PDF AGB3303 DC-4500 OT-89 OT-89 AGB3303 3303R 39 77 in sot-89 package AGB3303RS24Q1 AGB3303S24Q1 agb3303r

    Untitled

    Abstract: No abstract text available
    Text: AGB3307 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • 250-3000 MHz Frequency Range • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 12 dB Gain at 850 MHz • +17.5 dBm P1dB at 1950 MHz


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    PDF AGB3307 OT-89 OT-89 AGB3307

    MF SOT89

    Abstract: S21850
    Text: AGB3302 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • 250-3000 MHz Frequency Range • +36 dBm Output IP3 • 4.5 dB Noise Figure at 850 MHz • 16 dB Gain at 850 MHz • +18 dBm P1dB • SOT-89 Package •


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    PDF AGB3302 OT-89 OT-89 AGB3302 MF SOT89 S21850

    AGB3307RS24Q1

    Abstract: AGB3307 AGB3307S24Q1 50W choke
    Text: AGB3307 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • DC-5500 MHz Operation Bandwidth • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 12 dB Gain at 850 MHz • +17.5 dBm P1dB at 1950 MHz


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    PDF AGB3307 DC-5500 OT-89 OT-89 AGB3307 AGB3307RS24Q1 AGB3307S24Q1 50W choke

    Untitled

    Abstract: No abstract text available
    Text: AGB3306 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • 250-3000 MHz Frequency Range • +27.5 dBm Output IP3 at 850 MHz • 4.5 dB Noise Figure at 850 MHz • 20.5 dB Gain at 850 MHz • +14.5 dBm P1dB at 1950 MHz


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    PDF AGB3306 OT-89 OT-89 AGB3306

    Untitled

    Abstract: No abstract text available
    Text: AGB3309 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +35 dBm Output IP3 • 5 dB Noise Figure at 850 MHz • 15 dB Gain at 850 MHz


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    PDF AGB3309 OT-89 OT-89 AGB3309

    Untitled

    Abstract: No abstract text available
    Text: AGB3310 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +37 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 19 dB Gain at 850 MHz


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    PDF AGB3310 OT-89 OT-89 AGB3310

    O A B C sot-89

    Abstract: GRM39 0603CS AGB3304 AGB3304S24Q1
    Text: AGB3304 50Ω High IP3 Low Noise Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-2500 MHz Frequency Range • +39 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 18 dB Gain at 850 MHz • +22 dBm P1dB


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    PDF AGB3304 OT-89 OT-89 AGB3304 O A B C sot-89 GRM39 0603CS AGB3304S24Q1

    Untitled

    Abstract: No abstract text available
    Text: AGB3311 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +27 dBm Output IP3 • 6 dB Noise Figure at 850 MHz • 20 dB Gain at 850 MHz


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    PDF AGB3311 OT-89 OT-89 AGB3311

    Untitled

    Abstract: No abstract text available
    Text: AGB3312 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 11 dB Gain


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    PDF AGB3312 OT-89 OT-89 AGB3312

    Amplifier SOT-89 c4

    Abstract: TAT7460 0402CS-2N4XL BLM15AG102SN1 C2 SOT-89 RF amplifier MLK1005S2N7S UVK105CH0R7BW rf sot89
    Text: 75 Ohm RF Amplifier 50-2600 MHz TAT7460 Preliminary Product Datasheet Overview The TAT7460 is a 75 Ohm RF Amplifier designed for use up to 2600 MHz, addressing the CATV and Satellite bands in a single part. The TAT7460 is fabricated using 6-inch GaAs pHEMT technology to optimize performance


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    PDF TAT7460 TAT7460 100mA OT-89 R81012 Amplifier SOT-89 c4 0402CS-2N4XL BLM15AG102SN1 C2 SOT-89 RF amplifier MLK1005S2N7S UVK105CH0R7BW rf sot89

    0603CS

    Abstract: AGB3311 AGB3311S24Q1 GRM39
    Text: AGB3311 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • On-chip Active Bias • DC-4500 MHz Operation Bandwidth • +27 dBm Output IP3 • 6 dB Noise Figure at 850 MHz • 20 dB Gain at 850 MHz


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    PDF AGB3311 DC-4500 OT-89 OT-89 AGB3311 0603CS AGB3311S24Q1 GRM39

    BFG591 amplifier

    Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
    Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17


    OCR Scan
    PDF BF689K BF763 BFT25 BF747 BF547 BFS17 BFS17A BFR53 BFQ17 BFG17A BFG591 amplifier BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide S0T343