RF POWER TRANSISTOR C 10-12 GHZ CHIP Search Results

RF POWER TRANSISTOR C 10-12 GHZ CHIP Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF POWER TRANSISTOR C 10-12 GHZ CHIP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR cBC 415 Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details	Original	PDF	TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
transistor bfr96 Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold	Original	PDF	BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
AT41500 Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	PDF	AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
AT-41500 Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	PDF	AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
8054 transistor Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	PDF	AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
8054 transistor Abstract: TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 AT-41500 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter	Original	PDF	AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0438EN AV02-1844EN 8054 transistor TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500
at6400 Abstract: AT-64000-GP4 AT-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and	Original	PDF	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN AV02-1929EN at6400 AT-64000-GP4
at 64000 Abstract: at64000 S21E at-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over	Original	PDF	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E
RFSP5910 Abstract: 2.4 ghZ rf transistor "network interface cards" Text: RFSP5910 2.4 & 5 GHz Single-Chip Wireless LAN Power Amplifier PRODUCT DESCRIPTION The RFSP5910 is the industry’s first dual-band power amplifier IC designed for use in wireless local area network WLAN systems at 2.4 and 5 GHz. The single-chip IC is targeted for network interface cards (NIC) that can address both 802.11a	Original	PDF	RFSP5910 RFSP5910 2.4 ghZ rf transistor "network interface cards"
TRANSISTOR R1002 Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002 Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing	Original	PDF	R1002 MIL-STD-883 TRANSISTOR R1002 R1002 TRANSISTOR R1002 84-1LMI XR1002
Infineon technology roadmap for mosfet Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.	Original	PDF	B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
8909E Abstract: AT-42000 AT-42000-GP4 S21E Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz	Original	PDF	AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E
AT-42000 Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4 Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz	Original	PDF	AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
AT-41400 Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	PDF	AT-41400 AT-41400 RN/50 5965-8922E AT-41400-GP4 NF50 S21E chip die npn transistor

TRANSISTOR R1002 Abstract: R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002 Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 May 2002 - Rev 01-May-02 Features Chip Device Layout y High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 3.0 dB Noise Figure 18.0 dB Image Rejection 100% On-Wafer RF and DC Testing	Original	PDF	R1002 01-May-02 MIL-STD-883 TRANSISTOR R1002 R1002 R1002 TRANSISTOR TRANSISTORS R1002 256QAM 84-1LMI XH1000 XR1002
8909E Abstract: AT-42000 AT-42000-GP4 S21E AT42000-GP4 AV02-1002EN 42000 Text: AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized	Original	PDF	AT-42000 AT-42000 5965-8909E AV02-1002EN 8909E AT-42000-GP4 S21E AT42000-GP4 42000
Untitled Abstract: No abstract text available Text: 18.0-34.0 GHz GaAs MMIC Receiver R1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 14.0 dB Conversion Gain 3.0 dB Noise Figure 25.0 dB Image Rejection	Original	PDF	R1002 13-May-05 MIL-STD-883
BFR96 Abstract: BFR96 TRANSISTOR transistor bfr96 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	PDF	BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96
BFR96 Abstract: No abstract text available Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	PDF	BFR96 BFR96
Transistor C G 774 6-1 Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers	OCR Scan	PDF	BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
active double balanced mixer Abstract: 180MIL hic an005 Text: HEW LETT PACKARD IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Features • • • • • • • • IAM-81000 Chip Outline 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz IF Output From DC to 1 GHz with Gain	OCR Scan	PDF	IAM-81000 active double balanced mixer 180MIL hic an005
IAM-81000 Abstract: IAM transistor Text: HEWLETT-PACKARD/ CMP N T S blE J> m M447SA4 aOCH'nb fl5b IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Thai HEW LETT W!HA PACKARD IAM-81000 Chip Outline Features • • • • • • • • I HPA 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz	OCR Scan	PDF	M447SA4 IAM-81000 IAM transistor
AT-42000 Abstract: 42000 Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications	OCR Scan	PDF	AT-42000 AT-42000 nitride44 Rn/50 42000
T3D 62 Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66 Text: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator	OCR Scan	PDF	AT-41400 AT-41400 Rn/50 MM475flM 0017bE3 17L24 T3D 62 t3d 98 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66

RF POWER TRANSISTOR C 10-12 GHZ CHIP Search Results

RF POWER TRANSISTOR C 10-12 GHZ CHIP Result Highlights (5)

RF POWER TRANSISTOR C 10-12 GHZ CHIP Datasheets Context Search

TRANSISTOR cBC 415

transistor bfr96

AT41500

AT-41500

8054 transistor

8054 transistor

at6400

at 64000

RFSP5910

TRANSISTOR R1002

Infineon technology roadmap for mosfet

8909E

AT-42000

AT-41400

TRANSISTOR R1002

8909E

Untitled

BFR96

BFR96

Transistor C G 774 6-1

active double balanced mixer

IAM-81000

AT-42000

T3D 62