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    RF POWER MOSFET TRANSISTOR 100MHZ Search Results

    RF POWER MOSFET TRANSISTOR 100MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER MOSFET TRANSISTOR 100MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz

    mos 4069

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069

    w amplifier 30mhz

    Abstract: 1N5362
    Text: VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, w amplifier 30mhz 1N5362

    Untitled

    Abstract: No abstract text available
    Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF161 150MHz 30MHz, 150MHz, MRF151

    balun 50 ohm

    Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 balun 50 ohm 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 trifilar

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz,

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154

    VRF154FL

    Abstract: MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154 MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170

    arco mica trimmer

    Abstract: 1N4148 1N5362 2204B MRF154 VRF154FL
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 arco mica trimmer 1N4148 1N5362 2204B MRF154

    VRF154

    Abstract: No abstract text available
    Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 VRF154

    VRF154

    Abstract: No abstract text available
    Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 VRF154

    VK200-4B

    Abstract: No abstract text available
    Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF161 150MHz 30MHz, 150MHz, MRF151 VK200-4B

    10k trimpot

    Abstract: 10k trimpot vertical thermistor 10k ohm arco mica trimmer MRF154 equivalent mica trimmer gore MC1723 MC1723 application notes mrf154
    Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 10k trimpot 10k trimpot vertical thermistor 10k ohm arco mica trimmer MRF154 equivalent mica trimmer gore MC1723 MC1723 application notes mrf154

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE

    GP 809 DIODE

    Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE

    RD04HMS2

    Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp

    F-627-8-Q1

    Abstract: F6278-Q1
    Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3


    Original     		PDF UF28150J 100MHz-500MHz, F-627-8-Q1 F6278-Q1

    F627-8Q1

    Abstract: F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8
    Text: UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3


    Original     		PDF UF28150J 100MHz-500MHz, F627-8Q1 F627-8-Q1 UF28150J 100W rf power transistor 100MHz 100MHz-500MHz indiana general C4615 UF28150 F627-8

    DU1260T

    Abstract: No abstract text available
    Text: DU1260T RF Power MOSFET Transistor 60W, 2-175MHz, 12V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU1260T 2-175MHz, DU1260T

    DU28120T

    Abstract: No abstract text available
    Text: DU28120T RF Power MOSFET Transistor 120W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU28120T 2-175MHz, DU28120T

    Untitled

    Abstract: No abstract text available
    Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU2820S 2-175MHz,

    Untitled

    Abstract: No abstract text available
    Text: DU2880U RF Power MOSFET Transistor 80W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU2880U 2-175MHz,

    Untitled

    Abstract: No abstract text available
    Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power


    Original     		PDF DU28200M 2-175MHz,