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    RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Search Results

    RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF5003

    Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors
    Text: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF5003/D MRF5003 MRF5003 MRF5003/D* "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors

    500 watts amplifier schematic diagram pcb layout

    Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
    Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a


    Original     		PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor

    GSC371BAL2000

    Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
    Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band


    Original     		PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band

    MRF184

    Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France


    Original     		PDF AN1670/D AN1670 MRF184 transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors

    SKY65016-214LF

    Abstract: FBMH4525HM162N-T SKY65016 SKY65016-70LF SKY65016-92LF skyworks micro-x package
    Text: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 19 dB typ. @ 1000 MHz 0P1 dB: 14 dBm typ. @ 2 GHz Input and output impedance: 50 Ω nominal


    Original     		PDF SKY65016-214LF: J-STD-020 SKY65016 SKY65016-214LF FBMH4525HM162N-T SKY65016-70LF SKY65016-92LF skyworks micro-x package

    MRF5007

    Abstract: AN211A AN215A AN721 430B-01 motorola an721 application
    Text: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF5007/D MRF5007 MRF5007 MRF5007/D* AN211A AN215A AN721 430B-01 motorola an721 application

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 19 dB typ. @ 1000 MHz 0P1 dB: 14 dBm typ. @ 2 GHz Input and output impedance: 50 Ω nominal


    Original     		PDF SKY65016-214LF: J-STD-020 SKY65016

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 18 dB typ. @ 900 MHz High output 3rd order intercept: 30 dBm typ. 0P1 dB: 14 dBm typ. @ 2 GHz


    Original     		PDF SKY65016-214LF: J-STD-020 SKY65016

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65016-214LF: InGaP General Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 18 dB typ. @ 900 MHz High output 3rd order intercept: +30 dBm typ. 0P1 dB: +14 dBm typ. @ 2 GHz


    Original     		PDF SKY65016-214LF: J-STD-020 SKY65016

    1n4740 MOTOROLA

    Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
    Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y 1n4740 MOTOROLA 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF5015/D MRF5015 MRF5015/D*

    mrf5015

    Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
    Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF5015/D MRF5015 MRF5015/D* mrf5015 S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors

    08055C104KAT2A

    Abstract: 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR
    Text: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451 – DECEMBER 2004 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain – 210 MHz Gain Bandwidth Product


    Original     		PDF THS4631 SLOS451 08055C104KAT2A 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR

    "RF power MOSFETs"

    Abstract: AN211A AN215A AN721 MRF5035 Nippon capacitors
    Text: MOTOROLA Order this document by MRF5035/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5035 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF5035/D MRF5035 MRF5035/D* "RF power MOSFETs" AN211A AN215A AN721 MRF5035 Nippon capacitors

    j35 fet

    Abstract: mrf5015 Nippon capacitors MRF5015 equivalent
    Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF5015/D MRF5015 MRF5015/D* MRF5015/D j35 fet Nippon capacitors MRF5015 equivalent

    F5003

    Abstract: 1N4734
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan     		PDF F5003 MRF5003 MRFS003 AN215A, F5003 1N4734

    136y

    Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up


    OCR Scan     		PDF MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068

    MRF5003

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5003 MRF5003R1 N-Channel Enhancement-Mode The MRF5003 is designed for broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan     		PDF MRF5003 AN215A, MRF5003R1

    2865002402

    Abstract: 6435 fet MRF136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.


    OCR Scan     		PDF RF136 RF136Y MRF136 MRF136Y AN215A DL110 2865002402 6435 fet

    AM79C433

    Abstract: MX1L
    Text: K Jiä / U ^ U S e m i c o n d u c t o r s 900-MHz ISM Band Receiver Description The receiver IC U2762B-B is specifically designed for cordless telephone applications in the 900-MHz ISM band. It is manufactured using TEMIC’s advanced UHF process. The IC consists of a 900-MHz RF amplifier and


    OCR Scan     		PDF 900-MHz U2762B-B U2763B-B U2781B, AM79C432A AM79C433. D-74025 27-Feb-98 AM79C433 MX1L

    Nippon capacitors

    Abstract: equivalent of transistor BFT 51
    Text: MOTOROLA Order th is docum ent by MRF5007/D SEMICONDUCTOR TECHNICAL DATA f The RF MOSFET Line MRF5007 RF Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5007 is designed for broadband comm ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan     		PDF MRF5007/D MRF5007 2PHX34611Q-0 Nippon capacitors equivalent of transistor BFT 51

    MRF1507

    Abstract: PJ 0459
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1507 is designed fo r broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan     		PDF MRF1507 AN215A, MRF1507T1 PJ 0459

    transistor 7808

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


    OCR Scan     		PDF MRF134 MRF134, MRF134 68-ohm AN215A transistor 7808

    Untitled

    Abstract: No abstract text available
    Text: HFA1130/883 H A R R IS X Semiconductor Output Clamping, 850 MHz Current Feedback Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA1130/883 is a high speed, wideband current feed­


    OCR Scan     		PDF HFA1130/883 MIL-STD883 HFA1130/883 -84dBc 850MHz