GRM422Y5V106Z050AL
Abstract: PTMA180402M RO4350 INFINEON 20PIN
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
GRM422Y5V106Z050AL
RO4350
INFINEON 20PIN
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GRM422Y5V106Z050AL
Abstract: PTMA180402M RO4350
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50-ohm
GRM422Y5V106Z050AL
RO4350
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PTMA180402M V1
Abstract: GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 PTMA180402M RO4350
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
PTMA180402M V1
GRM422Y5V106Z050AL
JESD22-A114-F
PCE3718CT-ND
transistor c 2060
RO4350
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Untitled
Abstract: No abstract text available
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50ohm
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"RF Power Amplifier"
Abstract: RF1800
Text: RF1800 1900 - 40 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF1800
F33370
"RF Power Amplifier"
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Untitled
Abstract: No abstract text available
Text: Preliminary data sheet RF59006400 - 40 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF59006400
F33370
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P 1504 EDG
Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50-ohm
P 1504 EDG
GRM422Y5V106Z050AL
PTMA180402
12 pF ceramic capacitor
INFINEON 20PIN
c20vd2
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Untitled
Abstract: No abstract text available
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
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S-AU82VL
Abstract: TOSHIBA RF Power Module 5-53P
Text: S-AU82VL TOSHIBA RF POWER AMPLIFIER MODULE S-AU82VL ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
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S-AU82VL
Po60W
VDD12
VDD16
S-AU82VL
TOSHIBA RF Power Module
5-53P
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S-AU83H
Abstract: 5-53P
Text: S-AU83H TOSHIBA RF POWER AMPLIFIER MODULE S-AU83H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
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S-AU83H
Po32W
VDD12
VDD16
-40oducts
S-AU83H
5-53P
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S-AU93
Abstract: 5-53P
Text: S-AU93 TOSHIBA RF POWER AMPLIFIER MODULE S-AU93 ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
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S-AU93
Po60W
VDD12
VDD16
S-AU93
5-53P
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S-AU82L
Abstract: SAU82L 5-53P
Text: S-AU82L TOSHIBA RF POWER AMPLIFIER MODULE S-AU82L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
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S-AU82L
Po60W
VDD12
VDD16
-40oducts
S-AU82L
SAU82L
5-53P
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S-AU82H
Abstract: 5-53P
Text: S-AU82H TOSHIBA RF POWER AMPLIFIER MODULE S-AU82H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
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S-AU82H
Po60W
VDD12
VDD16
-40oducts
S-AU82H
5-53P
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S-AU83L
Abstract: 5-53P "power amplifier" sau83l
Text: S-AU83L TOSHIBA RF POWER AMPLIFIER MODULE S-AU83L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION
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S-AU83L
Po32W
VDD12
VDD16
-40oducts
S-AU83L
5-53P
"power amplifier"
sau83l
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Untitled
Abstract: No abstract text available
Text: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
1525-xx
40MHz
ARF1501
ARF1500
75-380pF
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sav40
Abstract: S-AV40
Text: S-AV40 TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 34.7 dB Min. ･Total Efficiency: 40% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 8 A, ZG = ZL = 50Ω) CHARACTERISTICS
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S-AV40
sav40
S-AV40
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Untitled
Abstract: No abstract text available
Text: SLNA-010-40-08-SMA DATA SHEET 0.8 dB NF Low Noise Amplifier Operating From 10 MHz to 1,000 MHz with 40 dB Gain, 18 dBm P1dB and SMA SLNA-010-40-08-SMA is a wideband low noise RF coaxial power amplifier operating in the 10 MHz to 1 GHz frequency range. The amplifier offers 0.8 dB noise
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SLNA-010-40-08-SMA
SLNA-010-40-08-SMA
noise-amplifier-40db-slna-010-40-08-sma-p
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2N5643
Abstract: No abstract text available
Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in
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2N5643
30Vdc.
2N5643
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150 watt amplifier
Abstract: transistor amplifier 5v to 15v AM091047SF-2H
Text: The RF Power House 935 - 960 MHz 40 Watt Power Amplifier AM091047SF-2H DESCRIPTION AMCOM's AM091047SF-2H is a Cellular Broadband Power Amplifier designed for high power applications. The class AB amplifier operates from 935 to 960 MHz and delivers a minimum P1dB of +46 dBm and a minimum
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AM091047SF-2H
AM091047SF-2H
150 watt amplifier
transistor amplifier 5v to 15v
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AM080947SF-2H
Abstract: 860-900MHZ
Text: The RF Power House 860 - 900 MHz 40 Watt Power Amplifier AM080947SF-2H DESCRIPTION AMCOM's AM080947SF-2H is a Cellular Broadband Power Amplifier designed for high power applications. The class AB amplifier operates from 860 to 900 MHz and delivers a minimum P1dB of +46 dBm and a minimum
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AM080947SF-2H
AM080947SF-2H
860-900MHZ
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AMPLIFIER 1500w
Abstract: No abstract text available
Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1500
40MHz
ARF1500
AMPLIFIER 1500w
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AMPLIFIER 1500w
Abstract: ARF 250v 1500w rf power generator ARF1501 ARF1500 1500W Power Amplifier
Text: S D ARF1501 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 250V 1500W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1501
ARF1500
40MHz
ARF1501
AMPLIFIER 1500w
ARF 250v 1500w
rf power generator
ARF1500
1500W Power Amplifier
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5201 IC equivalent
Abstract: MRF326 UG-58
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER
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MRF326
MRF326
5201 IC equivalent
UG-58
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motorola rf device
Abstract: motorola rf Power Transistor VK200 rfc RF POWER TRANSISTOR NPN VK-200 2 w RF POWER TRANSISTOR NPN MRF224
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF224 The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • 40 W, 175 MHz
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MRF224
MRF224
VK200-20/4B,
motorola rf device
motorola rf Power Transistor
VK200 rfc
RF POWER TRANSISTOR NPN
VK-200
2 w RF POWER TRANSISTOR NPN
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