RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Search Results

RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	PDF	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ Abstract: IEC-68-2-54 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ J-STD-002 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Text: e PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP	Original	PDF	IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 2 WATT 2 GHZ IEC-68-2-54 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ J-STD-002 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D*
CAPACITOR chip murata mtbf Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Untitled Abstract: No abstract text available Text: e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP	Original	PDF	1-877-GOLDMOS 1301-PTB20179
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ Abstract: RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ 9434 "RF Power Transistor" z-Source 15 w RF POWER TRANSISTOR NPN Text: e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP	Original	PDF	1-877-GOLDMOS 1301-PTB20179 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ 9434 "RF Power Transistor" z-Source 15 w RF POWER TRANSISTOR NPN
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	PDF	MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	Original	PDF	MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
POE-15 Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP	Original	PDF	PH1819-15N POE-15 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor Text: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	PDF	NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Text: SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	PDF	NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	PDF	NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
IN510 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939	Original	PDF	NE68939 NE68939 DEC-j50 -j100 9-j11 24-Hour IN510
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: NE68839 NE68939 NE69039 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039	Original	PDF	NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ NE68839 NE68939 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
capacitor mallory Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
te 1820 Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ Text: ERICSSON ^ PTB 20146 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications.	OCR Scan	PDF
rohm mtbf Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	PDF	1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	PDF	MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
bd135 equivalent Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	PDF	MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	PDF	MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
DBT134 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	PDF	MRF20030R/D DBT134
M 015 j47 Abstract: Diode FAJ 32 Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The M R F 20 06 0R and M R F 20 06 0R S are desig ned fo r b roadband com m e rcial and industrial ap plicatio ns at fre q u e n cie s from 1800 to 2 0 00 M Hz. T he high gain,	OCR Scan	PDF	MRF20060R/D M 015 j47 Diode FAJ 32

RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Search Results

RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Result Highlights (5)

RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ Datasheets Context Search

BD135

RF NPN POWER TRANSISTOR 2 WATT 2 GHZ

Untitled

CAPACITOR chip murata mtbf

Untitled

RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

POE-15

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

IN510

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

rohm mtbf

capacitor mallory

178 09T

te 1820

rohm mtbf

bd136 equivalent

bd135 equivalent

bd136 equivalent

DBT134

M 015 j47