RF NPN POWER TRANSISTOR 10 GHZ MICRO X Search Results

RF NPN POWER TRANSISTOR 10 GHZ MICRO X Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF NPN POWER TRANSISTOR 10 GHZ MICRO X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPN planar RF transistor Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor	Original	PDF	BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937
BD228 Abstract: BFG10 transistor K 2937 Text: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BFG10; BFG10/X BFG10X BD228 BFG10 transistor K 2937
Untitled Abstract: No abstract text available Text: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	PDF	BFG10; BFG10/X BFG10X
MLC850 Abstract: 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification	Original	PDF	BFG11; BFG11/X OT143 BFG11 SCD38 123055/1500/03/pp12 MLC850 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424
Untitled Abstract: No abstract text available Text: MCC BFS17 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • x NPN Transistor 25 mA 15 Volts 300 mWatts NPN transistor in a plastic SOT-23 package.	Original	PDF	BFS17 OT-23
power amplifier circuit diagram with pcb layout Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db Text: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are	Original	PDF	BFG480W BFG480W, BFG400 MGS765 MGS766 power amplifier circuit diagram with pcb layout PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
IC 8088 Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500 Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well	Original	PDF	ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Philips TdA3619 Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.	Original	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
smd transistor marking z3 Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2 Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090AR3 smd transistor marking z3 smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
transistor J585 Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090B MRF18090BS transistor J585 transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
smd transistor M3 sot23 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090B MRF18090BS smd transistor M3 sot23
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF

transistor motorola 114-8 Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090A MRF18090AS transistor motorola 114-8 motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
smd transistor marking j8 Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8 Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
on 5295 transistor Abstract: J374 on 5295 mosfet transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier	Original	PDF	MRF18085B MRF18085BR3 MRF18085BLSR3 on 5295 transistor J374 on 5295 mosfet transistor
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
silicon npn planar rf transistor sot 143 Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base	OCR Scan	PDF	BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
MLC850 Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency	OCR Scan	PDF	BFG11 BFG11/X OT143 BFG11 BFG11/X OT143. 711DflSb MLC850 equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
transistor 20107 Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer	OCR Scan	PDF	SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
rf transistor mar 8 Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	PDF	BLT11 OT103. 711DflEL rf transistor mar 8 npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips
bc337 TRANSISTOR equivalent Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103 Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	PDF	BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
npn C 1740 Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103 Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	PDF	BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103

RF NPN POWER TRANSISTOR 10 GHZ MICRO X Search Results

RF NPN POWER TRANSISTOR 10 GHZ MICRO X Result Highlights (5)

RF NPN POWER TRANSISTOR 10 GHZ MICRO X Datasheets Context Search

NPN planar RF transistor

BD228

Untitled

MLC850

Untitled

power amplifier circuit diagram with pcb layout

IC 8088

Philips TdA3619

BC548 TRANSISTOR REPLACEMENT

smd transistor marking z3

BGU7073

transistor J585

smd transistor M3 sot23

UPC8236

transistor motorola 114-8

smd transistor marking j8

on 5295 transistor

BB 509 varicap diode

silicon npn planar rf transistor sot 143

MLC850

transistor 20107

rf transistor mar 8

bc337 TRANSISTOR equivalent

npn C 1740