Untitled
Abstract: No abstract text available
Text: MC13751 Dual-Band Upmixer and Driver Amplifier DUAL–BAND UPMIXER AND DRIVER AMPLIFIER The MC13751 is an integrated transmit upmixer and driver amplifier designed for use in cellular phones. It includes two mixers and two RF step attenuators. The device is fabricated using Motorola’s Advanced RF
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MC13751
MC13751FCR2
MC751
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MM4018
Abstract: a5036 MM4018 motorola
Text: MM4018 , < II The RF Line II 1., PNP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as Class A, B, or C driver, or pre-driver stages in VHF applications.
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MM4018
a5036
MM4018
a5036
MM4018 motorola
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S1M8674
Abstract: amplifier SAW c4 ic rf amplifier DRV19
Text: TX RF FRONTS-ENDS IC S1M8674 INTRODUCTION 20-eTSSOP-BD44 S1M8674 is a fully integrated RF transmit IC for CDMA handsets. It includes an upconverter, a two-stage driver amplifier, and an LO buffer in 20TSSOP/24QFN with exposed paddle package. The driver amplifier
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S1M8674
20-eTSSOP-BD44
S1M8674
20TSSOP/24QFN
dBc/30kHz
10dBm
120pF
amplifier SAW
c4 ic rf amplifier
DRV19
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gsm signal amplifier
Abstract: AN1829 APP1829 MAX2265 amplifier gsm signal
Text: Maxim > App Notes > BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Keywords: rf, rf ic, pa, power amplifiers, wireless ics, gsm, edge, rf circuit, rf ics, PAs, rfics, power amplifier Jan 09, 2003 APPLICATION NOTE 1829 The MAX2265 Is Ideal for EDGE Base-Station Pre-Driver Applications
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MAX2265
925MHz
960MHz
340mA
MAX2265
com/an1829
MAX2265:
AN1829,
APP1829,
gsm signal amplifier
AN1829
APP1829
amplifier gsm signal
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A00025
Abstract: RF S-parameters
Text: RF3800 RF3800GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN Features 6W Output Power High Linearity >50% Efficiency VREF 1 Thermally-Enhanced AlN Packaging NC 2 7 RF OUT RF IN 3
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RF3800GaAs
RF3800
150MHz
960MHz
RF3800
2002/95/EC
DS080703
A00025
RF S-parameters
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M513
Abstract: MAAMSS0007 MAAMSS0007SMB MAAMSS0007TR MAAMSS0007TR-3000
Text: High Output IP3 Driver Amplifier 1700 - 2500 MHz Features • • • • MAAMSS0007 V4 Functional Block Diagram 42 dBm Output IP3 24 dBm P1dB Chip Scale Leadless Package Single Positive Supply Voltage NC NC NC RF Input Description M/A-COM’s MAAMSS0007 RF driver amplifier is a
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MAAMSS0007
MAAMSS0007
50-ohm
12-Lead
M513
MAAMSS0007SMB
MAAMSS0007TR
MAAMSS0007TR-3000
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QPP-007
Abstract: No abstract text available
Text: QPP-007 35W, 869-894MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-007 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The
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QPP-007
869-894MHz
QPP-007
H10535)
H10890)
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Untitled
Abstract: No abstract text available
Text: RF3866 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER Features First Stage WiMAX LNA/Linear Driver GSM900, CDMA, PCS, UMTS LNA/Linear Drive WLAN LNA High Gain Linear Amplification VD1 NC VD2 NC 15 NC NC 2 14 NC 13 RF OUT RF IN 3
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RF3866
400MHz
3800MHz
QFN20,
GSM900,
20-Pin,
3800MHz.
DS110718
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Untitled
Abstract: No abstract text available
Text: RF3866 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER Features First Stage WiMAX LNA/Linear Driver GSM900, CDMA, PCS, UMTS LNA/Linear Drive WLAN LNA High Gain Linear Amplification VD1 NC VD2 NC 15 NC NC 2 14 NC 13 RF OUT RF IN 3
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RF3866
20-Pin,
400MHz
3800MHz
QFN20,
GSM900,
RF3866
3800MHz.
DS110718
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transistor 13002
Abstract: 13002 transistor transistor 13002 TO 05 QPP-008 all transistor 13002 13002 power transistor transistor w 13002
Text: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power
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QPP-008
925-960MHz
QPP-008
H10890)
transistor 13002
13002 transistor
transistor 13002 TO 05
all transistor 13002
13002 power transistor
transistor w 13002
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35W amplifiers
Abstract: Xemod "RF Power Amplifiers" QPP-008
Text: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power
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QPP-008
925-960MHz
QPP-008
35W amplifiers
Xemod
"RF Power Amplifiers"
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RF 207
Abstract: QPP-207 xemod
Text: QPP-207 25W, 1805-1880MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-207 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The
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QPP-207
1805-1880MHz
QPP-207
H10890)
RF 207
xemod
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Untitled
Abstract: No abstract text available
Text: RF Driver Amplifier, 50 - 5000 MHz MAAMSS0026 V6P Features • • • • • Functional Schematic Low Cost Plastic SOT-89 Package Broadband Operation Output Intercept Point of up to +45 dBm Excellent ACPR performance High Efficiency Description M/A-COM’s MAAMSS0026 RF driver amplifier is a
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OT-89
MAAMSS0026
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QPP-201
Abstract: No abstract text available
Text: QPP-201 25W, 1930-1990MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-201 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The
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QPP-201
1930-1990MHz
QPP-201
H10890)
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xemod
Abstract: QPP-013
Text: QPP-013 35W, 869-894MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-013 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-013
869-894MHz
QPP-013
H10535)
H10890)
xemod
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XEMOD
Abstract: 2090-2190MHz QPP-305 H1182
Text: QPP-305 10W, 2110-2170MHz Driver Amplifier Preliminary QuikPAC Module Data General description: Features: The QPP-305 QuikPAC RF power module is a two stage Class AB amplifier designed for use as a driver in linear RF power amplifiers. The power transistors are fabricated using Xemod’s
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QPP-305
2110-2170MHz
QPP-305
H11822)
XEMOD
2090-2190MHz
H1182
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QPP-014
Abstract: No abstract text available
Text: QPP-014 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-014 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-014
925-960MHz
QPP-014
H10890)
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transistor 13002
Abstract: 13002 power transistor transistor 13002 TO 05 QPP-303 Class A power amplifiers transistor w 13002
Text: QPP-303 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-303 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power
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QPP-303
2110-2170MHz
QPP-303
H10890)
transistor 13002
13002 power transistor
transistor 13002 TO 05
Class A power amplifiers
transistor w 13002
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5W amplifier tone
Abstract: QPP-304
Text: QPP-304 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-304 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-304
2110-2170MHz
QPP-304
H10890)
5W amplifier tone
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Untitled
Abstract: No abstract text available
Text: AH315 3.3-3.8 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 25 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • RoHS-compliant/Lead-free
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AH315
AH315
JESD22-C101
J-STD-020
1-800-WJ1-4401
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AH315
Abstract: AH315-PCB JESD22-A114 dRIVER AMPLIFIER AT 5GHz
Text: AH315 3.3-3.8 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 25 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • RoHS-compliant/Lead-free
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AH315
AH315
JESD22-A114
J-STD-020
1-800-WJ1-4401
AH315-PCB
JESD22-A114
dRIVER AMPLIFIER AT 5GHz
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Untitled
Abstract: No abstract text available
Text: TRF3520 GSM RF MODULATOR/DRIVER AMPLIFIER SLW S060A -M AY 1998 Modulation and Upconversion from l/Q Baseband to RF on Single Chip Power Amplifier Driver Designed for GSM Portable Cellular Telephones 3.75-V Operation Internal VCO and SSB Mixer for Transmit
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TRF3520
S060A
48-Pin
900-MHz
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erie ceramic
Abstract: mrf4427 MOTOROLA IS21I2 j1222 MRF442 transistor C 2615
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF4427 The RF Line NPN Silicon RF Low Power Transistor . . . designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment.
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MRF4427
MRF3866
6-J10
6-j32
--j27
8-j22
3-j29
MRF4427
erie ceramic
mrf4427 MOTOROLA
IS21I2
j1222
MRF442
transistor C 2615
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J417
Abstract: UHF 8 Watt 8 Watt NPN surface mount power transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF4427R2 Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment.
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IS21I2
MRF3866
MRF4427R2
MRF4427R2
J417
UHF 8 Watt 8 Watt NPN surface mount power transistor
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