digitally programmable attenuator
Abstract: rf attenuator soic RF2420 SOIC-16 IS-54
Text: RF2420 PROGRAMMABLE ATTENUATOR Typical Applications • Power Control in Communication Systems • Commercial and Consumer Systems • CMOS Compatible Programmable • Portable Battery-Powered Equipment Attenuators SiGe HBT InGaP/HBT GaN HEMT ! FO RF IN 1
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RF2420
SOIC-16
950MHz
IS-54/55
RF2420
digitally programmable attenuator
rf attenuator soic
SOIC-16
IS-54
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RF2420
Abstract: SOIC-16
Text: RF2420 PROGRAMMABLE ATTENUATOR Typical Applications • Power Control in Communication Systems • Commercial and Consumer Systems • CMOS Compatible Programmable • Portable Battery-Powered Equipment Attenuators SiGe HBT InGaP/HBT GaN HEMT ! FO RF IN 1
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RF2420
SOIC-16
950MHz
2420400B
RF2420
SOIC-16
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Untitled
Abstract: No abstract text available
Text: RF2420 PROGRAMMABLE ATTENUATOR Typical Applications • Power Control in Communication Systems • Commercial and Consumer Systems • CMOS Compatible Programmable • Portable Battery-Powered Equipment Attenuators SiGe HBT InGaP/HBT GaN HEMT 9 FO RF IN 1
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RF2420
SOIC-16
950MHz
2420400B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AV101-12: HIP3 Variable Attenuator 0.8–1 GHz Features 50 dBm IP3 typical Low loss 1 dB typical ● Attenuation 30 dB typical ● Good VSWR <1.5:1 typical ● Small SOIC-8 package ● Connection Diagram ● Control Current RF Out Description
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AV101-12:
AV101-12
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AV111-12: HIP3 Variable Attenuator 0.80–1.00 GHz Features Connection Diagram 40 dBm IP3 typical ● Low loss 1 dB typical ● Attenuation 30 dB typical ● Good VSWR <1.5:1 typical ● Low phase shift ● Control Current RF Out Description
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AV111-12:
AV111-12
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MA4VAT904-1061T
Abstract: No abstract text available
Text: High IP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Features • • • • • • Useable Bandwidth: 0.60GHz to 1.2 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical +45 dBm IIP3, Low Loss Typical SOIC-8 Surface Mount Package
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60GHz
MA4VAT904-1061T
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Untitled
Abstract: No abstract text available
Text: High IP3 PIN Diode Variable Attenuator 0.60-1.2 GHz Features • • • • • • Large Useable Bandwidth: 0.60 GHz to 1.2 GHz 1.0 dB Insertion Loss 14 dB Return Loss, Typical 25 dB Attenuation, Typical +50 dBm IP3 SOIC-8 Package MA4VAT907-1061T V1 PIN Configuration
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MA4VAT907-1061T
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rf attenuator soic
Abstract: MA4VAT904-1061T
Text: High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT904-1061T V2 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package
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MA4VAT904-1061T
MA4VAT904-1061T
rf attenuator soic
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Untitled
Abstract: No abstract text available
Text: AT65-0107 Digital Attenuator, 31.5 dB, 6-Bit, TTL Driver DC - 2.0 GHz Features • • • • • • • • SOW-24 Attenuation: 0.5 dB Steps to 31.5 dB Low DC Power Consumption Plastic SOIC, Wide Body, SMT Package Integral TTL Driver 50 ohm Impedance Test Boards are Available
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AT65-0107
SOW-24
AT65-0107
SOIC-24
AT65-0107TR
AT65-0107-TB
and00
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Untitled
Abstract: No abstract text available
Text: MA4VAT904-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz Rev. V4 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package
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MA4VAT904-1061T
MA4VAT904-1061T
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MA4VAT904-1061T
Abstract: No abstract text available
Text: MA4VAT904-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz Rev. V4 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package
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MA4VAT904-1061T
MA4VAT904-1061T
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113t
Abstract: No abstract text available
Text: 3 Volt Voltage Variable Absorptive Attenuator, 40 dB, 0.5 - 2 GHz AT-113 AT-113 3 Volt Voltage Variable Absorptive Attenuator 40 dB, 0.5 - 2 GHz Features • • • • • • SOIC-8 Single Positive Voltage Control 0 to +3 Volts 40 dB Attenuation Range at 0.9 GHz
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AT-113
AT-113
113t
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IMT-2000
Abstract: AV113-12
Text: HIP3 Variable Attenuator 2.10–2.30 GHz AV113-12 Features • Low Loss 1.4 dB Typical SOI ■ Attenuation 18 dB Typical C-8 SOI C-8 ■ Good VSWR <1.5:1 Typical ■ Small SOIC-8 Package ■ For IMT-2000 Applications Description The AV113-12 is a current controlled variable attenuator
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AV113-12
IMT-2000
AV113-12
IMT2000
6/01A
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Untitled
Abstract: No abstract text available
Text: HIP3 Variable Attenuator 1.70–2.00 GHz AV102-12 Features • +50 dBm IP3 Typical SOI ■ Low Loss 1 dB Typical C-8 SOI C-8 ■ Attenuation 30 dB Typical ■ Good VSWR <1.5:1 Typical ■ Small SOIC-8 Package Description The AV102-12 is a current controlled variable attenuator
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AV102-12
Inp12
6/01A
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Untitled
Abstract: No abstract text available
Text: HIP3 Variable Attenuator 0.80–1.00 GHz AV101-12 Features • +50 dBm IP3 Typical SOI ■ Low Loss 1 dB Typical C-8 SOI C-8 ■ Attenuation 30 dB Typical ■ Good VSWR <1.5:1 Typical ■ Small SOIC-8 Package Description The AV101-12 is a current controlled variable attenuator
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AV101-12
AV101-12
6/01A
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Untitled
Abstract: No abstract text available
Text: HIP3 Variable Attenuator 2.10–2.30 GHz AV113-12 Features • Low Loss 1.4 dB Typical SOI ■ Attenuation 18 dB Typical C-8 SOI C-8 ■ Good VSWR <1.5:1 Typical ■ Small SOIC-8 Package ■ For IMT-2000 Applications Description The AV113-12 is a current controlled variable attenuator
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AV113-12
IMT-2000
AV113-12
IMT-2000
6/01A
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AT-113
Abstract: AT-113TR 113t
Text: M /A -O O M 3 Volt Voltage Variable Absorptive Attenuator 40 dB, 0.5 - 2 GHz M RF & Microwave Products SOIC-81 Features • • • • • • /MOCOVI ^ Single Positive Voltage Control 0 to +3 Volts 40 dB Attenuation Range at 0.9 GHz + 2 dB Linearity from BSL
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AT-113
AT-113
AT-113TR
113t
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AT-242
Abstract: AT-242TR
Text: M/A-OOM Digital Attenuator, 3 Bit, Single Control 28 dB, 0.5 - 2 GHz M RF & Microwave Products SOIC-81 Features • • • • /MOCOVI ^ Single Control CMOS Logic for each bit Positive Supply +3 to +5 Volts Low Cost SOIC-8 Plastic Package Tape and Reel Packaging Available
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AT-242
AT-242
AT-242TR
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Untitled
Abstract: No abstract text available
Text: AT65-0263 M/A-COM Preliminary Specifications Digital Attenuator, 31 dB, 5-Bit, TTL Driver DC - 2.0 GHz Features A lfa C C M RF & M oow H ve Prc ducts SOW-16 • • Attenuation: l.OdB Steps to 31dB Low DC Power Consumption • • Plastic SOIC, Wide Body, SMT Package
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AT65-0263
SOW-16
T65-0263
for12
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Untitled
Abstract: No abstract text available
Text: MICRO DEVICES Preliminary RF2410 I UHF PROGRAMMABLE ATTENUATOR Application: Features: • RF D ig ita l & A n a lo g c o m m u n ic a tio n syste m s • C o m p le te D ig ita l P o w e r C o n tro l • No N e g a tive S u p p ly Required C ontrol • M o n o lith ic co n s tru c tio n
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RF2410
7341-D
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Untitled
Abstract: No abstract text available
Text: GaAs 35dB MMIC FET Voltage Variable Single Control Attenuator o.4-2.s g h z atoo 2S3- i 2 FEATURES • ■ ■ ■ ■ ■ ■ ■ 35dB Range SOIC 8 Single Positive dC Bias Control Low Insertion Loss 1.7 dB Low Phase Shift Low Cost Requires Fixed 5 volt Bias
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AT002S3-12
Group/20
935-5150/Telex:
949436/Fax
AT002S3-12
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rf attenuator soic
Abstract: No abstract text available
Text: PRELIMINARY PACIFIC DATA SHEET œ MONOLITHICS PM2701 50-6000 MHz GaAs MMIC Attenuator Features: • 4 to 5V Single Bias • 10 nSec Response Time • Positive Control Voltage 0 to 4V • Linear Attenuation: 20 dB from .05 to 6.0 GHz .1 4 Pin Plastic SOIC
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PM2701
PM2701
rf attenuator soic
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DC bias of gaas FET
Abstract: Application Notes ALPHA INDUSTRIES DC bias of FET AT002N3-12
Text: GaAs 30 dB MMIC FET Voltage Variable Öl Alpha Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, Non-Reflective
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AT002N3-12
AT002N3-12
DC bias of gaas FET
Application Notes ALPHA INDUSTRIES
DC bias of FET
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Untitled
Abstract: No abstract text available
Text: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective
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AT002N3-12
AT002N3-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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