A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
2002/95/EC)
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RF AMPLIFIER marking A01
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
2002/95/EC)
RF AMPLIFIER marking A01
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Untitled
Abstract: No abstract text available
Text: LT1223 100MHz Current Feedback Amplifier U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 100MHz Bandwidth at AV = 1 1000V/µs Slew Rate Wide Supply Range: ±5V to ±15V 1mV Input Offset Voltage 1µA Input Bias Current 5MΩ Input Resistance 75ns Settling Time to 0.1%
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LT1223
100MHz
000V/Â
12-Bit
LT1223
LT1206
250mA/60MHz
LT1395
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lt6211 transistor
Abstract: LT6210 LT1223 LT1223C LT1223CJ8 LT1223CN8 LT1223CS8 LT1223M gs 069 0605 RF POWER TRANSISTOR 100MHz 5db
Text: LT1223 100MHz Current Feedback Amplifier U FEATURES DESCRIPTIO • The LT 1223 is a 100MHz current feedback amplifier with very good DC characteristics. The LT1223’s high slew rate, 1000V/µs, wide supply range, ±15V, and large output drive, ±50mA, make it ideal for driving analog signals over
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LT1223
100MHz
LT1223
LT1206
250mA/60MHz
LT1395
lt6211 transistor
LT6210
LT1223C
LT1223CJ8
LT1223CN8
LT1223CS8
LT1223M
gs 069 0605
RF POWER TRANSISTOR 100MHz 5db
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A01 monolithic amplifier
Abstract: MAR-1 RF amplifier MAR-1 MMIC MMIC MAR-1 RF AMPLIFIER marking A01 mmic mar 3 TB-432-1
Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High gain, 17.8 dB typ. at 0.1 GHz • Low noise figure, 3.5 dB typ. • Exact foot print substitute for MSA-0185 • Low current, 17mA • Cascadable, unconditionally stable
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MSA-0185
VV105
2002/95/EC)
C/85RH
A01 monolithic amplifier
MAR-1 RF amplifier
MAR-1 MMIC
MMIC MAR-1
RF AMPLIFIER marking A01
mmic mar 3
TB-432-1
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A01 monolithic amplifier
Abstract: RF AMPLIFIER marking A01 AF190
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
2002/95/EC)
A01 monolithic amplifier
RF AMPLIFIER marking A01
AF190
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
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A01 monolithic amplifier
Abstract: RF AMPLIFIER marking A01 414 monolithic amplifier AF190 ram1 A01 MMIC
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
2002/95/EC)
A01 monolithic amplifier
RF AMPLIFIER marking A01
414 monolithic amplifier
AF190
ram1
A01 MMIC
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190
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AF190
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MAR-1 MMIC
Abstract: MMIC MAR-1 monolithic amplifier MAR MSA-0185 VV105 WW107 A01 monolithic amplifier
Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High gain, 17.8 dB typ. at 0.1 GHz • Low noise figure, 3.5 dB typ. • Exact foot print substitute for MSA-0185 • Low current, 17mA • Cascadable, unconditionally stable
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MSA-0185
VV105
2002/95/EC)
MAR-1 MMIC
MMIC MAR-1
monolithic amplifier MAR
MSA-0185
VV105
WW107
A01 monolithic amplifier
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mar8
Abstract: mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier
Text: MONOLITHIC AMPLIFIERS 50 Ω Flat-Pack BROADBAND DC to 2 GHz MAV MAR up to +17.5 dBm output MODEL NO. o o o o J FREQ. MHz GAIN, dB Typical at MHz note 1 fL fU 100 500 1000 2000 MIN. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE DATA Style OPERATING RESISPOWER, dBm RANGE
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MAV-11
mar8
mini-circuits MAR-8
VV105
monolithic amplifier A04
MAV-11
A08 marking
MAR-8
MCL MAR-8
A07 RF Amplifier
marking A06 amplifier
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
A9M15
AFT09MS015N
TRANSISTOR Z10
D55295
815 transistor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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transistors 1UW
Abstract: 2N4393 TL084 DATA SHEET LF412A LT1057 LT1058 OP-215 tl072 photodiode tl074 tl084 replace TL084
Text: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision
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LT1057/LT1058
LT1057
LF412A
OP-215
LT1057)
LT1058)
13nV/Hz
10578fa
transistors 1UW
2N4393
TL084 DATA SHEET
LT1058
OP-215
tl072 photodiode
tl074 tl084
replace TL084
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RF AMPLIFIER marking A01
Abstract: marking 53 Sot-343 BFP620
Text: BFP620 NPN Silicon-Germanium RF Transistor Preliminary Data • • For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz • • • • Gms=21dB at 1.8 GHz Gold metalization for high reliability 70GHz fT - Line 10dBm Input IP3 capability @ 1.95 GHz, VCE=2V, ICE=6mA
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BFP620
70GHz
10dBm
OT-343
RF AMPLIFIER marking A01
marking 53 Sot-343
BFP620
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sot23-5 A01B
Abstract: Marking A01B voltage regulator MARKING A01B LMC7131 marking A01B SOT23
Text: LMC7111 Tiny CMOS Operational Amplifier with Rail-to-Rail Input and Output General Description The LMC7111 is a micropower CMOS operational amplifier available in the space saving SOT 23-5 package. This makes the LMC7111 ideal for space and weight critical designs. The wide common-mode input range makes it easy to
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LMC7111
12-Jun-2002
5-Aug-2002]
sot23-5 A01B
Marking A01B
voltage regulator MARKING A01B
LMC7131
marking A01B SOT23
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MAV-4
Abstract: MAV2 MAV4 MAV1 MAR-6
Text: M onolithic A mplifiers boo B roadband DC to 2 GHz up to +12.5 dBm output ow m GAIN, dB Typical at MHz . MHz note 1 Typ. Output ir^ut MODEL NO. □ J J □ MAXIMUM r y w i i R , v n M ft K % too 500 1000 2000 — 13.0 8.5 8.0 7.0 _1 MAR-6 J MAR-7 J MAR-8
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DC-2000
DC-1000
BBB123
MAV-11
MAV-4
MAV2
MAV4
MAV1
MAR-6
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s791
Abstract: transistor B 722
Text: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain
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569-GS
s791
transistor B 722
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