motorola zc 527
Abstract: S12 sot 23-6
Text: MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916
MBC13916
MRFIC0916
MRFIC0916,
motorola zc 527
S12 sot 23-6
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MAX2601
Abstract: MAX2235 MAX2240 MAX2264 MAX2430 MAX2602 MAX2840-MAX2841 UltraChip
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, pa, power amplifier, cdma, ISM band, rf ics, rfics, pa ics Nov 01, 2000 APPLICATION NOTE 335 Maxim Wireless/RF Power Amplifier Selector Guide Abstract: An overview of Maxim's RF power amplifier PA products targeted towards cellular, PCS, 802.11a/b/
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11a/b/
MAX2240
MAX2264/MAX2265
MAX2240:
MAX2251:
MAX2264:
MAX2265:
MAX2267:
MAX2268:
MAX2269:
MAX2601
MAX2235
MAX2240
MAX2264
MAX2430
MAX2602
MAX2840-MAX2841
UltraChip
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Untitled
Abstract: No abstract text available
Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
MBC13916/D
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PRF10
Abstract: MBC13916 MBC13916T1 MRFIC0916 937 motorola 0933 34 motorola zc 527
Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
PRF10
MBC13916T1
937 motorola
0933 34
motorola zc 527
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MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular
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SG1009Q42005
MMM6025,
MMM6035
MC13820
MRF6P3300HR3,
MRF6P3300HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MMM6029
NONLINEAR MODEL LDMOS
MMM6007
baseband DigRF
semiconductor cross index
MRF5S9080NB
MW6S010
MMM6000
MMH3101NT1
MRF648 applications
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MBC13916
Abstract: MBC13916T1 MRFIC0916 motorola zc 527 Motorola Zc 34
Text: Freescale Semiconductor, Inc. Order this document by MBC13916/D MBC13916 The RF Building Block Series Freescale Semiconductor, Inc. General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with
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MBC13916/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
MBC13916T1
motorola zc 527
Motorola Zc 34
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sot343r
Abstract: motorola rf module SOT-343 motorola marking MRFIC0916 MBC13916 motorola 4 mhz SOT-343R
Text: Order this document by MBC13916PP/D MBC13916 Product Preview The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is
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MBC13916PP/D
MBC13916
MBC13916
MRFIC0916
MRFIC0916,
sot343r
motorola rf module
SOT-343
motorola marking
motorola 4 mhz
SOT-343R
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bfr91 vishay
Abstract: No abstract text available
Text: _ BFR91 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFR91
BFR91
20-Jan-99
bfr91 vishay
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Bfr90
Abstract: BFR90 application
Text: ViSHAY ▼ _ BFR90 _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFR90
BFR90
20-Jan-99
BFR90 application
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TRA 1309
Abstract: BFR93R
Text: BFR93/BFR93R ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFR93/BFR93R
BFR93
BFR93R
20-Jan-99
TRA 1309
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transistor bu 1351
Abstract: No abstract text available
Text: BFR91A ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features
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BFR91A
BFR91A
20-Jan-99
transistor bu 1351
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Untitled
Abstract: No abstract text available
Text: BFR96T ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features
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BFR96T
BFR96T
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: ViSH A Y ▼ BFR96TS _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFR96TS
BFR96TS
20-Jan-99
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power amplifier 5 ghz
Abstract: RF5328 RF2472 mimo transceiver sot23-5 rf amplifier p12 QFN16 RF sot23-5 amplifier p12
Text: RF53283.3 V, 5 GHz Linear Power Amplifier RF5328 Preliminary 3.3 V, 5 GHz LINEAR POWER AMPLIFIER VC2 VC3 NC 16 15 14 13 Features 11 RF OUT RF IN 2 Input Match 27 dB Typical Gain Across Band Interstage Match Output Match 10 RF OUT RF IN 3 POUT = 18 dBm @ 4% TYP EVM
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RF53283
RF5328
IEEE802
11a/n
RF53Board
DS061109
5328WD41013
power amplifier 5 ghz
RF5328
RF2472
mimo transceiver
sot23-5 rf amplifier p12
QFN16 RF
sot23-5 amplifier p12
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ka band lna
Abstract: LMX2216 LMX2216M LMX2320 M16A CMOS Gilbert Cell Mixer gilbert cell sum 2 LO1F Gilbert Cell
Text: LMX2216 National Semiconductor LMX2216 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications General Description The LMX2216 is a monolithic, integrated low noise amplifier LNA and mixer suitable as a first stage amplifier and downconverter for RF receiver applications. The wideband oper
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LMX2216
LMX2216
200il.
TL/W/11814-18
bS011E2
ka band lna
LMX2216M
LMX2320
M16A
CMOS Gilbert Cell Mixer
gilbert cell sum
2 LO1F
Gilbert Cell
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A113
Abstract: MHVIC2115R2
Text: MOTOROLA Order this document by MHVIC2115R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 2.1-2.2 GHz SiFET RF Integrated Power Amplifier MHVIC2115R2 The MHVIC2115R2 is a 26 Volt integrated power amplifier designed for driver and output stage W–CDMA applications. The device is a three–stage amplifier
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A113
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CMOS Gilbert Cell Mixer
Abstract: cmos 3v gilbert mixer
Text: LMX2216 National Semiconductor LMX2216 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications General Description The LMX2216 is a monolithic, integrated low noise amplifier LNA and mixer suitable as a first stage amplifier and downconverter for RF receiver applications. The wideband oper
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LMX2216
LMX2216
CMOS Gilbert Cell Mixer
cmos 3v gilbert mixer
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l-band 60 watt transistor
Abstract: SOLID STATE INC
Text: Solid State Pulsed Power Amplifier Solid State Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.25-1.35-30-2 is a high • 60% efficient power, pulsed solid state RF amplifier for use in a • Dual RF outputs Military Counter Mortar Radar System. This rugged
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Untitled
Abstract: No abstract text available
Text: BFR93/BFR93R VIS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
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BFR93/BFR93R
BFR93
BFR93R
ran93/BFR93R
20-Jan-99
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bfr96ts
Abstract: No abstract text available
Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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BFR96TS
BFR96TS
D-74025
22-Jan-01
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BFR92
Abstract: No abstract text available
Text: BFR92 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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BFR92
D-74025
20-Sep-00
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Untitled
Abstract: No abstract text available
Text: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation
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BFR96TS
Abstract: No abstract text available
Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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BFR96TS
BFR96TS
D-74025
22-Jan-01
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Untitled
Abstract: No abstract text available
Text: BFR92/BFR92R ViSHAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ A pplications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR92/BFR92R
BFR92
BFR92R
20-Jan-99
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