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    RF AMPLIFIER DFN 2X2 Search Results

    RF AMPLIFIER DFN 2X2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TK170V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.17 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK210V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK099V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.099 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation

    RF AMPLIFIER DFN 2X2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    amplifier DFN 2x2

    Abstract: capacitor 47uF Marking code mps SOT-25 rf RF AMPLIFIER marking A07 TS9006 55 ic Sot-343 0.47uF LDO low drop out mps 0512
    Text: TS9006 150mA Low Noise CMOS LDO SOT-343 Pin Definition: 1. Enable 2. Ground 3. Output 4. Input 6. Output SOT-25 DFN 2x2 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description


    Original     		PDF TS9006 150mA OT-343 OT-25 TS9006 250mV 15uVrms amplifier DFN 2x2 capacitor 47uF Marking code mps SOT-25 rf RF AMPLIFIER marking A07 55 ic Sot-343 0.47uF LDO low drop out mps 0512

    amplifier DFN 2x2

    Abstract: transistor 2x2 2x2 dfn Marking code mps
    Text: TS9006 150mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description TS9006 series is 150mA low-noise CMOS LDO especially designed for battery-power RF and wireless applications.


    Original     		PDF TS9006 150mA OT-25 TS9006 250mV 15uVrms amplifier DFN 2x2 transistor 2x2 2x2 dfn Marking code mps

    TS9007

    Abstract: 2x2 dfn amplifier DFN 2x2 LOW NOISE 300mA LOW DROPOUT REGULATOR sot23 Marking code mps sot-23 Marking s1 TRANSISTOR
    Text: TS9007 300mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable SOT-23 Pin Definition: 1. Ground 2. Output 3. Input General Description The TS9007 series is 300mA ultra-low-noise LDO especially designed for battery-power RF and wireless


    Original     		PDF TS9007 300mA OT-25 OT-23 TS9007 450mV 15uVrms 2x2 dfn amplifier DFN 2x2 LOW NOISE 300mA LOW DROPOUT REGULATOR sot23 Marking code mps sot-23 Marking s1 TRANSISTOR

    sot-25

    Abstract: 2.8V REGULATOR SOT-25 sot-25 marking 2x2 dfn amplifier DFN 2x2 ceramic capacitor, .1uF rf GSM low pass filter SOT-25 rf LDO low drop out TS9007
    Text: TS9007 300mA Low Noise CMOS LDO SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass 5. Output DFN 2x2 Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. Enable General Description The TS9007 series is 300mA ultra-low-noise LDO especially designed for battery-power RF and wireless


    Original     		PDF TS9007 300mA OT-25 TS9007 450mV 15uVrms sot-25 2.8V REGULATOR SOT-25 sot-25 marking 2x2 dfn amplifier DFN 2x2 ceramic capacitor, .1uF rf GSM low pass filter SOT-25 rf LDO low drop out

    TQP3M9035

    Abstract: 4450F 4450F rogers 0 DFN triquint 2x2 dfn
    Text: TQP3M9035 High Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2mm 8-lead DFN plastic package Product Features • •   • • • •


    Original     		PDF TQP3M9035 TQP3M9035 4450F 4450F rogers 0 DFN triquint 2x2 dfn

    amplifier DFN 2x2 gain

    Abstract: No abstract text available
    Text: AP1110 2.4~2.5 GHz Power Amplifier 2004.12.21 Preliminary AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT Bluetooth Class1 applications.


    Original     		PDF AP1110 AP1110 23dBm 150mA 23dBm -33dBc amplifier DFN 2x2 gain

    7805 sot23

    Abstract: 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502
    Text: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		PDF WSB10K1205 7805 sot23 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502

    LT5526

    Abstract: LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624
    Text: 12.2005 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		PDF cornerston93) D-73230 I-20156 SE-164 WSB10K1205 LT5526 LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624

    7805 to92

    Abstract: 7805 sot23 7805 to92 Datasheet LTC1569 LTC2602 LT5526 LT6600-5 LTC1569-6 LT1993-2 LT5514
    Text: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form


    Original     		PDF WSB10K1205 7805 to92 7805 sot23 7805 to92 Datasheet LTC1569 LTC2602 LT5526 LT6600-5 LTC1569-6 LT1993-2 LT5514

    TG2H214220-FL

    Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
    Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TQP3M9035 High Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2 mm 8 Pin DFN Package Product Features • • • • • • • • • •


    Original     		PDF TQP3M9035

    13.5MHZ RFID Reader

    Abstract: LT5575 LT5570 QFN 9X9 LT5579 Wideband Mixer upconverting and downconverting lw100815ku lt5538 QFN32 5X5 GND AA 14-Bit 160MSPS SAR ADC
    Text: VOL 3 Wireless & RF Solutions High Performance Analog ICs Linear Technology offers some of the highest performance RF and signal chain solutions for wireless and cellular infrastructure. These products support worldwide standards LTE, WiMAX, GSM, W-CDMA, TD-SCDMA, CDMA, CDMA2000, etc. Other wireless systems


    Original     		PDF CDMA2000, 1-800-4-LINEAR LW100815KU 13.5MHZ RFID Reader LT5575 LT5570 QFN 9X9 LT5579 Wideband Mixer upconverting and downconverting lw100815ku lt5538 QFN32 5X5 GND AA 14-Bit 160MSPS SAR ADC

    TQP3M9035

    Abstract: No abstract text available
    Text: TQP3M9035 High Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2 mm 8 Pin DFN Package Product Features • • • • • • • • • •


    Original     		PDF TQP3M9035 TQP3M9035

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MML09231H Rev. 0, 5/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09231HT1 Low Noise Amplifier The MML09231H is a single−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is


    Original     		PDF MML09231H MML09231HT1 MML09231H

    CXE-2022

    Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE-2022 MARKING RFMD InP transistor HEMT optimum recievers 106-172 106172

    MARKING RFMD

    Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z MARKING RFMD CXE2022Z CXE2022SR inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7

    Untitled

    Abstract: No abstract text available
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z

    Untitled

    Abstract: No abstract text available
    Text: TQP3M9035 High-Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2 mm 8 Pin DFN Package Product Features • • • • • • • • • •


    Original     		PDF TQP3M9035

    Untitled

    Abstract: No abstract text available
    Text: HMC788LP2E v00.0510 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E

    Untitled

    Abstract: No abstract text available
    Text: TQP3M9035 High-Linearity LNA Gain Block Applications •     Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2 mm 8 Pin DFN Package Product Features          


    Original     		PDF TQP3M9035 TQP3M9035

    GaAs DFN 2x2

    Abstract: No abstract text available
    Text: HMC788LP2E v02.0311 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E GaAs DFN 2x2

    Untitled

    Abstract: No abstract text available
    Text: HMC788ALP2E v00.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788ALP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +33 dBm • LO Driver Applications


    Original     		PDF HMC788ALP2E HMC788ALP2E

    Untitled

    Abstract: No abstract text available
    Text: HMC788LP2E v03.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E

    HMC788LP2E

    Abstract: HMC788 2x2 dfn amplifier DFN 2x2
    Text: HMC788LP2E v00.0510 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications


    Original     		PDF HMC788LP2E HMC788LP2E HMC788 2x2 dfn amplifier DFN 2x2