frankfurt
Abstract: TFB2208
Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several
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TFB2208T
frankfurt
TFB2208
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frankfurt oder
Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several
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TFB2208T
frankfurt oder
617db-1018
Megaxess
TFB2208
frankfurt
TFB2208T
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sWG 24 copper wire
Abstract: No abstract text available
Text: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D1094UK
400MHz
500MHz
sWG 24 copper wire
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dmos rf fet 4w 28v
Abstract: D1083UK
Text: TetraFET D1083UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
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D1083UK
200MHz
dmos rf fet 4w 28v
D1083UK
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D1093UK
Abstract: No abstract text available
Text: TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D1093UK
500MHz
D1093UK
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D1094UK
Abstract: No abstract text available
Text: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D1094UK
400MHz
D1094UK
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D2294UK
Abstract: idq06
Text: TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D2294UK
500MHz
500MHz
24swg
D2294UK
idq06
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D2293UK
Abstract: No abstract text available
Text: TetraFET D2293UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D2293UK
500MHz
D2293UK
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D2201UK
Abstract: No abstract text available
Text: TetraFET D2201UK.S METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS
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D2201UK
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dmos rf fet 4w 28v
Abstract: D1083UK
Text: TetraFET D1083UK SEME LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND
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D1083UK
200MHz
dmos rf fet 4w 28v
D1083UK
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Untitled
Abstract: No abstract text available
Text: TetraFET SEME D1083UK LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND
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D1083UK
200MHz
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D2294UK
Abstract: No abstract text available
Text: TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D2294UK
500MHz
D2294UK
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42 swg enamelled copper wire
Abstract: copper wire 42 SWG
Text: TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS
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D1093UK
500MHz
42 swg enamelled copper wire
copper wire 42 SWG
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D2020UK
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D2020UK–P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D2020UK
55GSS
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VDB50
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D1011UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D1011UK-P
VDB50
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Untitled
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D1211UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D1211UK-P
500MHz
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D2019
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D2019UK-p METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D2019UK-p
D2019
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Untitled
Abstract: No abstract text available
Text: Mil TetraFET Etti IMI SEME D1011UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED 4. FEATURES • SIMPLIFIED AMPLIFIER DESIGN -Vj * • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE
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D1011UK
S08PACKAGE
100mA
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Untitled
Abstract: No abstract text available
Text: lili TetraFET 1111 SEME D2004UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W -28V-1GHZ PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN1 SOURCE COMMON
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D2004UK
-28V-1GHZ
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Untitled
Abstract: No abstract text available
Text: nil Vrrr= TetraFET mi D2010UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W-28V-1GHZ SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1 SOURCE
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D2010UK
0W-28V-1GHZ
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Untitled
Abstract: No abstract text available
Text: mi TetraFET =&= INI D1211UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W - 12.5V -500MHz SINGLE ENDED J JW FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE
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D1211UK
-500MHz
S08PACKAGE
500MHz
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6 ghz amplifier 20w
Abstract: No abstract text available
Text: lili TetraFET itti SEME 02213UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V- 1 GHz PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN1 SOURCE COMMON
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET D2005UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1
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D2005UK
27x45°
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET D2001UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1
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D2001UK
27x45°
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