Portable tv Circuit Diagram schematics
Abstract: OmniVision CMOS pcb BGB741L7 BGS12A Portable tv Circuit schematics omnivision eva AN206 BGB741L7ESD BGS12AL7-4 C166
Text: : BGB741L7ESD and BGS12AL7 LNA and RF switch for mobile TV A pplications A pplication Note AN206 Revision: Rev. 1.0 2010-07-30 RF and Protection Devices Edition 2010-07-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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BGB741L7ESD
BGS12AL7
AN206
80MHz.
100pF.
150pF.
AN206,
Portable tv Circuit Diagram schematics
OmniVision CMOS pcb
BGB741L7
BGS12A
Portable tv Circuit schematics
omnivision eva
AN206
BGS12AL7-4
C166
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RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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AWL6254RS35P8
Abstract: 2.4GHz Cordless Phone circuit diagram AWL6254 BT051
Text: AWL6254 2.4 GHz 802.11b/g/n WLAN PA, LNA, and RF Switch Data Sheet - Rev 2.0 FEATURES • 3.3 % EVM @ POUT = +16 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • 75 mA Transmit Path Current Consumption at POUT = +16 dBm • SP3T RF Switch to Enable Bluetooth Path
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AWL6254
11b/g/n
11b/g
AWL6254RS35P8
2.4GHz Cordless Phone circuit diagram
AWL6254
BT051
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Untitled
Abstract: No abstract text available
Text: AWL6254 2.4 GHz 802.11b/g/n WLAN PA, LNA, and RF Switch Data Sheet - Rev 2.0 FEATURES • 75 mA Transmit Path Current Consumption at POUT = +16 dBm • SP3T RF Switch to Enable Bluetooth Path • Single +3.6 V Supply • Transmit Path Linear Power Gain of 28 dB
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AWL6254
11b/g/n
11b/g
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SMD transistor M05
Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE
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10/2M
SMD transistor M05
smd TRANSISTOR code m05
wy smd transistor
UPD5740
NE66200
TRANSISTOR m05 smd
UPD5740T6N
UPG2159T6R
SMD transistor M05 driver
50 VOLTS 5 amp smd sot-89 TRANSISTOR
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schematic weigh scale
Abstract: No abstract text available
Text: Circuit Note CN-0216 Devices Connected/Referenced Circuits from the Lab reference circuits are engineered and tested for quick and easy system integration to help solve today’s analog, mixed-signal, and RF design challenges. For more information and/or support, visit www.analog.com/CN0216.
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CN-0216
AD7791
24-Bit
ADA4528-1
ADP3301
com/CN0216.
AD7791
ADA4528-1
CN10164-0-9/11
schematic weigh scale
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IC 7486
Abstract: 3g signal Booster LC3B MICROWAVE ASSOCIATES ISOLATOR gsm Booster GSM/ 3G booster 3g UMTS BOOSTER HMC472LP4 gsm repeater booster HMC478ST89
Text: SPRING 2005 OFF-THE-SHELF NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. 15 WATT POWER AMPLIFIER MODULE FOR CELLULAR! * 32 NEW PRODUCTS RELEASED! Product Showcase 5-Bit Digital Attenuator HMC470LP3 • DC to 3 GHz • 1 dB LSB Steps to 31 dB
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HMC470LP3
HMC487LP5
OC-48
OC-192
IC 7486
3g signal Booster
LC3B
MICROWAVE ASSOCIATES ISOLATOR
gsm Booster
GSM/ 3G booster
3g UMTS BOOSTER
HMC472LP4
gsm repeater booster
HMC478ST89
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AWL6254
Abstract: AWL6254RD1Q4 AWL6254RS35P0 AWL6254RS35P6 AWL6254RS35P8 AWL6254RS35Q1
Text: AWL6254 2.4 GHz 802.11b/g/n WLAN PA, LNA, and RF Switch PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • 4.0 % EVM @ POUT = +16 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -40 dBr 1st Sidelobe/-58 dBr 2nd Sidelobe ACPR at +18 dBm with IEEE 802.11b at 1, 2, 5.5, 11
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AWL6254
11b/g/n
Sidelobe/-58
11b/g
AWL6254
AWL6254RD1Q4
AWL6254RS35P0
AWL6254RS35P6
AWL6254RS35P8
AWL6254RS35Q1
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Untitled
Abstract: No abstract text available
Text: AWL6254 2.4 GHz 802.11b/g/n WLAN PA, LNA, and RF Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • E T E L E O T S E B L O SO B O 3.3 % EVM @ POUT = +16 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps 75 mA Transmit Path Current Consumption at
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11b/g/n
AWL6254
11b/g
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isolator 2 2.1 GHz
Abstract: No abstract text available
Text: OBSOLETE PRODUCT HMC-C008 v05.1007 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz AMPLFIERS Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable
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HMC-C008
HMC-C008
6061-T6
MIL-C-5541,
HMC-C008HV115
HMC-C008HV230
isolator 2 2.1 GHz
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UTC820
Abstract: UTC-820 Highland Electronics (Shenzhen) 1.2W AUDIO POWER AMPLIFIER
Text: 820 LINEAR INTEGRATED CIRCUIT 1.2W AUDIO POWER AMPLIFIER Description The 820 is a monolithic intergrated audio amplifier. It is designed for audio frequency class B amplfier. Features *Wide operating supply voltage:Vcc=3~14V *Medium output power Po=1.2W at Vcc=9V,RL=8 ohm ,Thd=10%
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220pF
660pF
500mW
UTC820
UTC-820
Highland Electronics (Shenzhen)
1.2W AUDIO POWER AMPLIFIER
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Simple second-order filters meet many filtering requirements. low-order low-pass filter
Abstract: highpass rf filter Sallen-Key filter low-pass cookbook MAX4174 MAX4175 MAX4274 MAX4275 MAX4281 MAX4282
Text: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 700: Jan 22, 2001 Fixed-Gain Op Amps Simplify Filter Design Use less component count, money, and board space when designing Sallen-Key filters. Simplify band pass filters with fixed gain amplfiers. Simple second-order filters meet many filtering requirements. A low-order low-pass filter, for example, is
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MAX4174:
MAX4175:
MAX4274:
MAX4275:
MAX4281:
MAX4282:
MAX4284:
com/an700
Simple second-order filters meet many filtering requirements. low-order low-pass filter
highpass rf filter
Sallen-Key filter low-pass
cookbook
MAX4174
MAX4175
MAX4274
MAX4275
MAX4281
MAX4282
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long range gold detector circuit diagram
Abstract: RAYTHEON RMWD24001 dc to 12 GHz driver amplifier
Text: Raytheon Raytheon Commercial Electronics RMWD24001 21 to 26.5 GHz Driver Amplifier MMIC Description The RMWD24001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Driver Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
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RMWD24001
RMWD24001
long range gold detector circuit diagram
RAYTHEON
dc to 12 GHz driver amplifier
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RF3858
Abstract: RF3858ISM GaN Bias 25 watt PHEMT* Noise Amplifier with Bypass Switch ant2 0.3 23
Text: RF3858 RF3858ISM Band Transmit/Receive Module with Diversity Transfer Switch ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND LNA OUT GND LNA VCC 31 30 29 28 27 LNA VREF 2 Input Match LNA SEL 26 VRX2 25 VRX1 3 24 ANT1 RX SWITCH 4 23 ANT2
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RF3858
RF3858ISM
900MHz
DS101116
RF3858PCK-410
RF3858
RF3858ISM
GaN Bias 25 watt
PHEMT* Noise Amplifier with Bypass Switch
ant2 0.3 23
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RF3858
Abstract: RF pcb antenna 922 928 RF3858PCK-410 RF3858SR
Text: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND GND LNA OUT GND LNA VCC Package: LGA, 32-pin, 8mm x 8mm x 1.2mm LNA IN 1 32 31
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RF38583
RF3858
32-pin,
DS111104
RF3858
RF3858SR
RF3858TR13
RF3858PCK-410
RF pcb antenna 922 928
RF3858PCK-410
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Untitled
Abstract: No abstract text available
Text: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND LNA OUT GND LNA VCC 32 31 30 29 28 27 LNA VREF 2 Input Match LNA SEL 26 VRX2 25
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RF3858
RF38583
32-pin,
Tran23
DS111104
RF3858SR
RF3858PCK-410
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SL242
Abstract: SL242-30 spacek
Text: COMPONENT BROCHURE A SELECTED SAMPLING OF OUR COMPREHENSIVE LINE OF MICROWAVE AND MILLIMETER-WAVE COMPONENTS AND SUBASSEMBLIES FROM 10 TO 110 GHz: Mixers, Up/Down Converters Block Converters Mixer-Preamplifiers Planar Mixers Power Amplifiers Low-Noise Amplifiers
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C14-1
SL242
SL242-30 spacek
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cdi schematics pcb
Abstract: IT28 it27 ac cdi schematic diagram cdi schematic cdi schematics F2152 I960 RF2152
Text: RF RF2152 Preliminary M ICRO-DEVICES POWER AMPLIFIERS DU AL-M O D E CD M A /A M PS OR TD M A /A M P S 3 V POWER A M P L IF IE R manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in dual-mode
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RF2152
RF2152
800MHz
950MHz
PSSOP-16
-TW30PAE
25PAE
85PAE
-T-30Gan
25Gan
cdi schematics pcb
IT28
it27
ac cdi schematic diagram
cdi schematic
cdi schematics
F2152
I960
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Untitled
Abstract: No abstract text available
Text: RF RF2152 Preliminary MICRO DEVICES POWER AMPLIFIERS D U A L - M O D E C D M A / A M P S OR T D M A / A M P S 3 V P OWE R A M P L I F I E R manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier In dual-mode
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RF2152
800MHz
950MHz
PSSOP-16
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dc cdi schematic diagram
Abstract: cdi schematics pcb cdi schematics diagram transistor tt 2140 cdi circuit diagram cdi schematic detailed circuit schematics dc cdi F2152 RF2152 25Gain
Text: RF Preliminary MICRO-DEVICES RF2152 POWER AMPLIFIERS D U A L - M O D E C D M A / A M P S OR T D M A / A M P S 3 V P OWE R A M P L I F I E R m anufactured on an advanced G allium A rsenide H etero junction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier In dual-m ode
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RF2152
RF2152
800MHz
950MHz
PSSOP-16
-T-30PÃ
25PAE
85PAE
25Gain
dc cdi schematic diagram
cdi schematics pcb
cdi schematics
diagram transistor tt 2140
cdi circuit diagram
cdi schematic
detailed circuit schematics dc cdi
F2152
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MC1590
Abstract: PLESSEY Replacement
Text: GEC PLESSEY SEMICONDS 43E D H 37bflS2E 'T v7cf'Oct-0\ GEC PLESSEY IS E M IC ONDUCT OR S I SL6140 400MHz WIDEBAND AGC AMPLIFIER Supersedes edition in Septem ber 1988 Linear 1C Handbook The SL6140 is an integrated broadband AGC amplfier, designed on an advanced 3-micron all implanted bipolar
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37bflS2E
SL6140
400MHz
SL6140
400MHz.
MC1590
PLESSEY Replacement
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Untitled
Abstract: No abstract text available
Text: R F W i MICRO DEVICES DUAL-MODE CDMA/AM PS OR TOMA/AMPS 3 V POWER A M PLIFIER Typical Applications • Spread Spectrum Systems • 3 V JCDM A /TA CS Cellular Handsets • C D P D Portable Data Cards • 3 V T D M A /A M P S Cellular Handsets • Portable Battery-Powered Equipment
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RF2152
28V5O
1960kHecffset)
27dBm
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KIA8159FN b i p o l a r l i n e a r i n t e g r a t e d c ir c u it 1.5V STEREO HEADPHONE AMPLIFIER The KIA8159FN is developed for play-back stereo headphone equipments 1.5V use . It is built in dual auto-reverse pre amplifiers, dual OCL power amplifiers,
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KIA8159FN
KIA8159FN
48//Vrms
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