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    RF 4*4 MM QFN POWER AMPLIFIER Search Results

    RF 4*4 MM QFN POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF 4*4 MM QFN POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V2 Functional Block Diagram Features •       Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing


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    PDF XX1002-QH 24-lead XX1002-QH

    Untitled

    Abstract: No abstract text available
    Text: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V4 Functional Block Diagram Features •       Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing


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    PDF XX1002-QH 24-lead XX1002-QH

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


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    XP1005

    Abstract: XU1006-QB XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB October 2006 - Rev 19-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain


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    PDF U1006-QB 19-Oct-06 XU1006-QB XP1005 XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1

    Untitled

    Abstract: No abstract text available
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB August 2007 - Rev 19-Aug-07 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain


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    PDF U1006-QB 19-Aug-07 XU1006-QB

    Untitled

    Abstract: No abstract text available
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB June 2007 - Rev 15-Jun-07 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain


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    PDF 15-Jun-07 U1006-QB XU1006-QB

    38TX0768-QB

    Abstract: 38TX0768-QB-0L00 38TX0768-QB-0L0T 38TX0768-QB-EV1 XP1005
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB October 2006 - Rev 05-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level


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    PDF 38TX0768-QB 05-Oct-06 38TX0768-QB 38TX0768-QB-0L00 38TX0768-QB-0L0T 38TX0768-QB-EV1 XP1005

    Untitled

    Abstract: No abstract text available
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB June 2006 - Rev 15-Jun-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 3.0 dB Conversion Gain


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    PDF 15-Jun-06 38TX0768-QB 38TX0768-QB

    class B push pull power amplifier

    Abstract: TAT7469SC8 C315O 76-QFN rf 4 mm QFN LQH31HNR50K TAT7469 TAT7469-SC8 7469 1008AF-901XKL
    Text: 75 Ohm RF Amplifier 50-1300 MHz TAT7469 Advanced Product Information Overview The TAT7469 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7469 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to


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    PDF TAT7469 TAT7469 R81119 TAT7469-SC8) TAT7469-QFN) class B push pull power amplifier TAT7469SC8 C315O 76-QFN rf 4 mm QFN LQH31HNR50K TAT7469-SC8 7469 1008AF-901XKL

    Untitled

    Abstract: No abstract text available
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB August 2006 - Rev 25-Aug-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level


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    PDF 38TX0768-QB 25-Aug-06 38TX0768-QB

    26 sot-363 rf power amplifier

    Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
    Text: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package


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    PDF UPC2745TB OT-363 UPC2746TB UPC2747TB UPC2748TB IIP32 UPC8190K DC-10 UPC8194K 26 sot-363 rf power amplifier UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV

    TC1-33-75G2

    Abstract: class B push pull power amplifier 76-QFN balun 75 ohm CRCW04020R0FKED 0402AF-561XJLW 1008AF-901XKLC TAT7468 0402CS-4N7XJLW Figure87
    Text: 75 Ohm RF Amplifier 50-1000 MHz TAT 7468B Preliminary Data Sheet Overview The TAT7468B is a 75 Ohm RF Amplifier designed for use to 1 GHz. The TAT7468B contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to


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    PDF 7468B TAT7468B R90313 TAT7468B-QFN) TC1-33-75G2 class B push pull power amplifier 76-QFN balun 75 ohm CRCW04020R0FKED 0402AF-561XJLW 1008AF-901XKLC TAT7468 0402CS-4N7XJLW Figure87

    qfn stencil

    Abstract: SE7262L ta 7222
    Text: SE7262L 2.5-2.7 GHz WiMAX Power Amplifier Applications ƒ ƒ Product Description The SE7262L WiMAX Power Amplifier is a high performance device offering high output power with high linearity and exceptional efficiency. Designed for portable or mobile applications in the 2.5-2.7 GHz


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    PDF SE7262L SE7262L IEEE802 DST-00155 May-26-2009 qfn stencil ta 7222

    Untitled

    Abstract: No abstract text available
    Text: MMA-343737-Q10 3.4 – 3.7 GHz 4W Linear Power Amplifier Module Advance Data Sheet June 2007 Features: • • • • • • • • • • Frequency Range: 3.4 to 3.7 GHz 13.0 dB Gain 36.5 dBm P1dB 48 dBm IP3 29.5 dBm Pout @ 2% EVM Power Detector Power Control


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    PDF MMA-343737-Q10 MMA-343737-Q10 16QAM 64QAM

    MMA-343737-Q10

    Abstract: SMU200A FSQ26 QFN10 solar converter dc to dc diagram QFN10 RF tt 2194 "channel estimation"
    Text: MMA-343737-Q10 3.4 – 3.7 GHz 4W Linear Power Amplifier Module Advance Data Sheet June 2007 Features: • • • • • • • • • • Frequency Range: 3.4 to 3.7 GHz 13.0 dB Gain 36.5 dBm P1dB 48 dBm IP3 29.5 dBm Pout @ 2% EVM Power Detector Power Control


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    PDF MMA-343737-Q10 MMA-343737-Q10 16QAM 64QAM SMU200A FSQ26 QFN10 solar converter dc to dc diagram QFN10 RF tt 2194 "channel estimation"

    ML200M

    Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


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    PDF MMG2401 MMG2401NR2 ML200M F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A

    12065A104JAT2A

    Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
    Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •


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    PDF MMG2401 MMG2401R2 12065A104JAT2A F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E

    "channel estimation"

    Abstract: No abstract text available
    Text: MMA-343737-Q10 3.4 – 3.7 GHz 4W Linear Power Amplifier Module Advance Data Sheet June 2007 Features: • • • • • • • • • • 13.0 dB Gain 36.5 dBm P1dB 48 dBm IP3 29.5 dBm Pout @ 2% EVM Power Detector Power Control Single Positive Power Supply


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    PDF MMA-343737-Q10 MMA-343737-Q10 16QAM 64QAM "channel estimation"

    12065A104JAT2A

    Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


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    PDF MMG2401 MMG2401NR2 12065A104JAT2A 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2

    LPCC-32 9 x 9 mm

    Abstract: TRF1222 TRF1222IRTMR TRF1222IRTMRG3 TRF1222IRTMT TRF1222IRTMTG3 irf 3405
    Text: TR F1 TRF1222 222 www.ti.com SLWS171A – APRIL 2005 – REVISED DECEMBER 2005 3.5-GHz Integrated Up-Converter FEATURES KEY SPECIFICATIONS • • • • • • • • • • Performs Up-Conversion in 3.5-GHz Radios 3300-3800 MHz Integrated IF amplifier, Mixer and LO Buffer


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    PDF TRF1222 SLWS171A 16-dB TRF1222 LPCC-32 9 x 9 mm TRF1222IRTMR TRF1222IRTMRG3 TRF1222IRTMT TRF1222IRTMTG3 irf 3405

    QFN-8 RF

    Abstract: ABA3130
    Text: ABA3130 Low Noise Amplifier with Gain Control ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • 75 Ω Single-Ended Input • 75 Ω Differential Output • 37 dB of Gain Control Range • Wideband Operation: to Above 1.1 GHz • 4.5 dB Typical Noise Figure at 5 dB Gain


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    PDF ABA3130 ABA3130 QFN-8 RF

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


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    PDF MMG2401 MMG2401NR2 MMG2401 12065A104JAT2A

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


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    PDF MMG2401 MMG2401NR2 12065A104JAT2A

    P1031-QK

    Abstract: XB1014-QT XP1031-QK XP1031-QK-EV1 XU1006-QB pin diodes 10 GHz
    Text: 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm P1031-QK August 2009 - Rev 26-Aug-09 Features Linear Power Amplifier Output Power Adjust 25.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point +35.5 dBm OIP3 General Description Mimix Broadband’s four stage 37.0-40.0 GHz SMD


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    PDF P1031-QK 26-Aug-09 XP1031-QK P1031-QK XB1014-QT XP1031-QK-EV1 XU1006-QB pin diodes 10 GHz