UF 5807
Abstract: 06035J0R8ABTTR AH315 AH315-PCB LL1608-FSL18NJ QAM-64 "738 819" 2W High Amplifier qfn
Text: AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Applications • 802.16 WiMAX infrastructure 24-pin 5x5mm leadless QFN SMT package General Description GND / NC Vcc1 GND / NC Vbias2 Iref2 20 19 18 17 16 RF Out RF In 4 12 RF Out RF In 5 11 RF Out 10 13 GND / NC
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AH315
24-pin
UF 5807
06035J0R8ABTTR
AH315
AH315-PCB
LL1608-FSL18NJ
QAM-64
"738 819"
2W High Amplifier qfn
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transistor NEC B 617
Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357
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2SC5336
2SC3357
2SC5336-T1
transistor NEC B 617
nec k 3115
NEC k 3115 transistor
2SC3357
2SC5336
2SC5336-T1
4435 power ic
NEC 718
P1093
NEC B 617
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Untitled
Abstract: No abstract text available
Text: FP31QF The Communications Edge TM Advanced Product Information 23 22 21 GND 20 GND GATE / 3 RF IN 19 DRAIN / RF OUT 16 GND GND 7 15 GND 8 9 10 11 12 13 14 GND 17 GND GND 6 GND 18 GND GND 5 GND GND 4 Function Gate / RF Input Drain / RF Output Pin No. 3 19 All other pins &
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FP31QF
28-pin
FP31QF
FP31QF"
1-800-WJ1-4401
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2SC5180
Abstract: 2SC5180-T1 t84 marking PU10517EJ01V0DS
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low current consumption and high gain 2 S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
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2SC5180
S21e2
2SC5180-T1
2SC5180
2SC5180-T1
t84 marking
PU10517EJ01V0DS
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2SC5015
Abstract: 2SC5015-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation
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2SC5015
2SC5015-T1
PU10403EJ01V0DS
2SC5015
2SC5015-T1
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2SC5509
Abstract: 2SC5509-T2 2V330
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
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2SC5509
2SC5509-T2
2SC5509
2SC5509-T2
2V330
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NEC 1357
Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
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2SC5509
2SC5509-T2
NEC 1357
2SC5509
2SC5509-T2
C10535E
487 4PIN
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2SC5786
Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz
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2SC5786
S21e2
2SC5786-T1
2SC5786
2SC5786-T1
marking UE
marking 654 3pin
nec 1299 662
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Germanium Transistor
Abstract: Germanium power ON5088,115
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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ON5088
OT343F
JESD625-A
Germanium Transistor
Germanium power
ON5088,115
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aa191
Abstract: 897 1747 SWITCHPLEXER LMSP54CA-141 sp-AA191 GSM1800 GSM900 LMSP43AA-191 LMSP54AA-097 LMSP54CA-142
Text: Microwave Modules 04.10.20 RF Diode Switches SP AA191 0.4±0.1 0.7±0.2 0.4±0.1 1 (2) (3) (4) (5) (12) (6) 1.2±0.1 1.8 max. 0.80±0.15 3.2±0.2 0.45±0.2 0.4±0.1 Pin 1 Marking 4.7±0.2 0.4±0.1 SWITCHPLEXERr 0.8±0.1(11)(10)(9) (8) (7) 0.6±0.2 (1) : GSM1800 Rx
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AA191
GSM1800
GSM900
LMSP43AA-191
aa191
897 1747
SWITCHPLEXER
LMSP54CA-141
sp-AA191
LMSP43AA-191
LMSP54AA-097
LMSP54CA-142
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Untitled
Abstract: No abstract text available
Text: VG111 The Communications Edge TM • MTTF > 100 years GND GND GND GND VA CTRL 2 1 28 GND 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator 23 GND GND 14 22 GND 15 16 17 18 19 20 21 N/C • 6x6 mm 28-pin QFN package 3 GND 9 GND 13
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VG111
28-pin
VG111
dyn800-WJ1-4401
VG111"
1-800-WJ1-4401
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variable inductor 17 18
Abstract: No abstract text available
Text: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier • MTTF > 100 years GND GND GND VA CTRL GND GND 2 1 28 GND 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator 23 GND GND 14 22 GND 15 16 17 18 19 20 21 GND • 6x6 mm 28-pin QFN package
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VG101
28-pin
VG101
1-800-WJ1-4401
VG101"
variable inductor 17 18
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SP AA097
Abstract: AA097
Text: Microwave Modules 04.07.01 RF Diode Switches 12 0.1±0.1 (6) (11)(10) (9) (8) (7) 0.4±0.2 2.2±0.1 A 0.4±0.1 (1) (2) (3) (4) (5) 0.1±0.1 4.0±0.2 SP AA097 0.4±0.1 0.1±0.1 1.8 max. 5.4±0.2 0.4±0.2 SWITCHPLEXERr 0.6±0.1 1.0±0.1 0.35±0.20 A : 1 Pin Marking
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AA097
GSM1800
GSM900
LMSP54AA-097
LMSP54CA-141
LMSP54CA-142
SP AA097
AA097
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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905 motorola
Abstract: QFN-20 GSM900 MRFIC0970
Text: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900
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MRFIC0970/D
MRFIC0970
QFN-20)
QFN-20
MRFIC0970
GSM900
QFN-20
905 motorola
GSM900
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Untitled
Abstract: No abstract text available
Text: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking
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TQM879026
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Untitled
Abstract: No abstract text available
Text: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking
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TQM879026
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking
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MRFIC0970/D
MRFIC0970
QFN-20)
QFN-20
MRFIC0970
GSM900
QFN-20
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ovenaire 10 mhz oscillator
Abstract: ovenaire OSC ovenaire ovenaire 10 mhz ovenaire oscillator ovenaire osc 64 Oak Frequency Control APEC 25to ovenaire oak frequency control OSC
Text: OAK/nC COY ELEK-. OVENAIRE 5bE D b?Efi51D DGDGSbö ?Tfl IOKM DIMENSIONS IN MILLIMETERS PIN 1. 2. 3. CONN. RF OUTPUT +12 VDC 0 VDC ovenoire NAME f M ILLIM ETER S 1 0 . 5 0 OTHERWISE < ANSLES UNLESS £ a p e c iriE P O cn 2250 OUTLINE DRAWING CATALOG TCXO to leran ces
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b7EB51D
77-1-X
ovenaire 10 mhz oscillator
ovenaire OSC
ovenaire
ovenaire 10 mhz
ovenaire oscillator
ovenaire osc 64
Oak Frequency Control
APEC
25to
ovenaire oak frequency control OSC
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TRANSISTOR 1443
Abstract: marking f2 sot363 f2 sot-363 marking VU SOT363
Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation ijy io? vu» 6 54 Matting en SOT-363 pockog* {fo r «am pi« W ti c o rm p o ró t to pin 1 of tHric« 12 3 Olrtcttow of Unrnllng
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OT-363
Q62702-F1645
OT-363
TRANSISTOR 1443
marking f2 sot363
f2 sot-363
marking VU SOT363
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ovenaire OSC
Abstract: ovenaire 10 mhz ovenaire ovenaire 10 mhz oscillator ovenaire oak frequency control OSC TCXO 1050 ovenaire oscillator
Text: OAK/nC COY ELEK-. OVENAIRE SbE D • b?Efi51D DGDOSbñ ?Tfi « O K M DIMENSIONS IN MILLIMETERS PIN 1. 2. 3. MM .64 5.00 5.60 6.60 7.10 8.90 11.70 16.00 20.30 30.70 46.00 CONN. RF OUTPUT +12 VDC 0 VDC CO w H PS w Ui o v e f M u r e NAME £ OrH ucn O NEW DECAL ADDED.
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Efi51D
ovenaire OSC
ovenaire 10 mhz
ovenaire
ovenaire 10 mhz oscillator
ovenaire oak frequency control OSC
TCXO 1050
ovenaire oscillator
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ovenaire
Abstract: Ovenaire-Audio-Carpenter TCXO 1050
Text: OVEN AI RE-AU DIO- T? DE JbflBSSS^ DOODfln 1 T~ - S O 'C I DIMENSIONS IN MILLIMETERS PIN 1. 2. 3. CONN. RF OUTPUT +12 VDC 0 VDC co w - w Ci NAME V O W W iH 1 r~» OUTLINE DRAWING CATALOG TCXO SHT TOLERANCES ±.020 :i l Mate HT NEW DECAL ADDED. . D p y r i g h t e d M a n u f a
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Untitled
Abstract: No abstract text available
Text: Miscellaneous ÿ r r- ;ÿ - Snap-on Foot Snap-on Foot Omnimate Range j Omnimate Range Snap-on Foot I Crimpmate Range j limate for RSV 1.6 plug-in connector elements marking with dekafix possible Snap-on foot for TS 35 Poles type RSV 1.6 RF 4 Part No. 4 1582910000
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BL180°
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