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    REVERSE-BIASED IN PN JUNCTION DIODE Search Results

    REVERSE-BIASED IN PN JUNCTION DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    REVERSE-BIASED IN PN JUNCTION DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vertical PNP

    Abstract: GHz PNP transistor AN1107 NPN Two monolithic transistors pnp transistor 2000v
    Text: Dielectric Isolation Application Note In an integrated circuit, the individual transistors must be isolated from each other for correct circuit operation. In most IC processes, this is done by using reverse biased PN junctions and the technology is referred to as junction


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    Rf detector HSMS 8202

    Abstract: Waveform Clipping With Schottky schottky diode hsms8202 HSMP-2810 A7 diode schottky HSMP 2800 hsms2827 SCHOTTKY CROSS REFERENCE very high current schottky diode HSMP-281B
    Text: Applications Information Schottky Diode Fundamentals The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped or p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the


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    PDF thisT-143 HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMP-2810 HSMS-2812 HSMS-2813 HSMS-2814 HSMS-2820 Rf detector HSMS 8202 Waveform Clipping With Schottky schottky diode hsms8202 A7 diode schottky HSMP 2800 hsms2827 SCHOTTKY CROSS REFERENCE very high current schottky diode HSMP-281B

    current limiting diodes

    Abstract: constant current diode CCL1000 CCL0035 CCL5750 "Constant Current diode"
    Text: What is a Current Limiting Diode? Outline below are typical CLD Characteristics, Symbols, Parameters and Definitions. A Current Limiting Diode, also known as a “Current Regulating Diode” or a “Constant Current Diode”, performs quite a unique function. Similar to a zener diode,


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    PDF 90-second current limiting diodes constant current diode CCL1000 CCL0035 CCL5750 "Constant Current diode"

    pn junction diode structure

    Abstract: schottky Diode PV application pn junction diode application pn junction diode p-n silicon diode
    Text: Chip Diode Application Note Introduction The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Today, designers of compact electronic systems


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    PDF e/IPA0307 pn junction diode structure schottky Diode PV application pn junction diode application pn junction diode p-n silicon diode

    pin diode limiter

    Abstract: DIODE 4005 HPND-4005 PIN DIODE hp pin diode HSMP-3814 5082-0012 HPND-4005 spice model Microwave PIN diode A001
    Text: PIN Diodes Characteristics The most important feature of the PIN diode is its basic property of being an almost pure resistor at RF frequencies, whose resistance value can be varied from approximately 10,000 Ω to less than 1 Ω by the control current flowing


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    SI96-06

    Abstract: pn junction diode structure "punchthrough voltage" AND ESD design ideas 3.3V TVS diode
    Text: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations


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    PDF SI96-06 18cm-3) SI96-06 pn junction diode structure "punchthrough voltage" AND ESD design ideas 3.3V TVS diode

    pn junction diode structure

    Abstract: "punchthrough voltage" AND ESD design ideas TVS diode Application Note
    Text: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations


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    PDF SI96-06 18cm-3) pn junction diode structure "punchthrough voltage" AND ESD design ideas TVS diode Application Note

    pn junction diode structure

    Abstract: TVS 30V TVS diode Application Note
    Text: Surging Ideas TVS Diode Application Note Revised - February 21, 1999 SI96-06 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com EPD Transient Voltage Suppressors for Low Voltage Electronics At voltages below 5V, conventional avalanche technology


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    PDF SI96-06 pn junction diode structure TVS 30V TVS diode Application Note

    HSMS-2822

    Abstract: HSMS-2802 HSMS-2852 hsms HSMS2800 HSMS-280X HSMS-2812 HSMS-2820 HSMS282X HSMS-282X
    Text: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky Diode Fundamentals Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter


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    PDF HSMS-2802 HSMS-2822 5962-9465E HSMS-2822 HSMS-2852 hsms HSMS2800 HSMS-280X HSMS-2812 HSMS-2820 HSMS282X HSMS-282X

    Waveform Clipping With Schottky

    Abstract: HSMS-2802 schottky diode cross reference HSMS-28X2 HSMS-2820 HSMS-2822 HSMS2800 HSMS-280X HSMS-2812 HSMS-2852
    Text: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to


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    PDF HSMS-2802 HSMS-2822 Waveform Clipping With Schottky schottky diode cross reference HSMS-28X2 HSMS-2820 HSMS-2822 HSMS2800 HSMS-280X HSMS-2812 HSMS-2852

    Waveform Clipping With Schottky

    Abstract: hsms-2802 hp d sOT23 diode for clippers schottky diode cross reference HSMS-2802 HSMS-28X2 HSMS2822
    Text: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to


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    PDF HSMS-2802 HSMS-2822 5962-9465E Waveform Clipping With Schottky hsms-2802 hp d sOT23 diode for clippers schottky diode cross reference HSMS-28X2 HSMS2822

    solar cell

    Abstract: SB15H45 photovoltaic panels solar panel monocrystalline schottky diode application current bypass diodes "solar CELL" PHOTOVOLTAIC PANEL SOLAR Schottky diode TO220
    Text: VISHAY GENERAL SEMICONDUCTOR www.vishay.com Rectifiers Application Note Solar Cell Bypass Diodes in Silicon Crystalline Photovoltaic Panels IMPORTANT CHARACTERISTICS OF BYPASS DIODES FOR PHOTOVOLTAIC SOLAR CELLS 1. Forward Voltage Drop VF at Bypass The basic function of bypass diodes in solar cells is to


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    PDF O-263 18-Aug-11 solar cell SB15H45 photovoltaic panels solar panel monocrystalline schottky diode application current bypass diodes "solar CELL" PHOTOVOLTAIC PANEL SOLAR Schottky diode TO220

    TIRM01

    Abstract: vishay transistor databook
    Text: Vishay Telefunken Physical Explanation Differential resistance See forward resistance, differential General Terminology Semiconductor diodes are used as rectifiers, switchers, varactors and voltage stabilizers see Zener Databook . Semiconductor diodes are two-terminal solid-state


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    Untitled

    Abstract: No abstract text available
    Text: Vishay Semiconductors Physical Explanation Differential resistance See forward resistance, differential General Terminology Semiconductor diodes are used as rectifiers, switchers, varactors and voltage stabilizers see Zener Databook . Semiconductor diodes are two-terminal solid-state


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    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES ・EPD Enhanced Punch-Through Diode Structure. ・400 Watts peak pulse power (tp=8/20 s)


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    PDF 8CUS23 5/50ns)

    vishay transistor databook

    Abstract: No abstract text available
    Text: VISHAY GENERAL SEMICONDUCTOR Rectifiers Application Note Physical Explanation GENERAL TERMINOLOGY Semiconductor diodes are used as rectifiers, switches, varactors and voltage stabilizers see Zener databook . Semiconductor diodes are two-terminal solid-state devices


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    constant current diode

    Abstract: current limiting diode
    Text: What is a Current Limiting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu­ lating D iode” or a "Constant Current Diode," performs quite a unique function. Similar to a zener diode, which


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    PDF 90-second constant current diode current limiting diode

    Untitled

    Abstract: No abstract text available
    Text: What is a Current Lim iting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu­ lating Diode” or a "Constant Current Diode," performs quite a unique function. Sim ilar to a zener diode, which


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    PDF 90-second

    varactor diode bb 205

    Abstract: BB205 a/varactor diode bb 205
    Text: Te m ic TELEFUNKEN Semiconductors Physical Explanation of the Diodes General Terminology Sem iconductor diodes are used as rectifiers, sw itchers, varactors and voltage stabilizers see chapter 'Voltage R egulator and Z -diodes' . Sem iconductor diodes are two term inal solidstate devices


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    PDF BA282, BA682 BA479G BA679. varactor diode bb 205 BB205 a/varactor diode bb 205

    Untitled

    Abstract: No abstract text available
    Text: Solid State Control Components ! | j j j i The introduction of the PIN diode more than 35 years ago has led to the development of a large family of rf and microwave control components, including switches, attenuators, modulators, and phase shifters that have become essential elements of most modern


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    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


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    Untitled

    Abstract: No abstract text available
    Text: T h a l H EW LETT m llti» P A C K A R D PIN Diodes Characteristics The m ost im portant feature of the PIN diode is its basic property of being an alm ost pu re resistor at RF frequencies, w hose resistance value can be varied from approxi­ mately 10,000 Q to less than 1 £2


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    diode in rectifier circuit

    Abstract: design of rectifier circuit LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
    Text: GENFET Power Transistor Integral Reverse Rectifier By Robert Fried Integral Reverse Rectifier Characteristics Introduction The reverse rectifier incorporated in the GENFET Power Transistor is essentially a conventional p-n junction with the M ost Po w er M O SF E T s, in c lu d in g G EN FET, have a


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    diode 698

    Abstract: DIODE REDRESSEMENT diodes redressement thomson Diodes de redressement
    Text: BYV 10-20 —►B YV 10-4 THOMSON SEMICONDUCTORS SCHOTTKY RECTIFIER .DIODES, DIODES DE REDRESSEMENT'! SCHOTTKY . *»? : -. 'o - 1 A*/Tamb - 80°C Metal to atficon rectifier diodes in glees case featuring very low forward voltage drop and fast recovery time, intented for low voltage switching


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