Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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UNITRODE
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles
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bq4014/bq4014Y
32-pin
10-year
256Kx8
bq4014
152-bit
UNITRODE
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4010/bq4010Y
28-pin
10-year
bq4010
536-bit
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Untitled
Abstract: No abstract text available
Text: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455C − MARCH 2005 − REVISED AUGUST 2005 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA
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MSP430F42x0
SLAS455C
16-Bit
125-ns
12-Bit
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Untitled
Abstract: No abstract text available
Text: Advance Information CAT25C256 256K-Bit SPI Serial CMOS E2PROM FEATURES • 100,000 Program/Erase Cycles ■ 5 MHz SPI Compatible ■ 100 Year Data Retention ■ 1.8 to 6.0 Volt Operation ■ Self-Timed Write Cycle ■ Hardware and Software Protection ■ 8-Pin DIP/SOIC and 20-Pin TSSOP
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CAT25C256
256K-Bit
20-Pin
64-Byte
CAT25C256
32Kx8
25C256
25C256:
2000/Reel
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CTJ-6-06-1306-BK-PX
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 8 9 A A B B C C SPECIFICATIONS Voltage Rating: Current Rating: Contact Res.: Insulation Res.: Housing: Contacts: Mating/Unmating : Retention: Durability: Operating Temp.: D E Series CTJ Modular phone jack Recommended PCB Layout F Positions X
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1000Meg
500VAC
CTJ-6-06-1306-BK-PX
CTJ-6-06-1306-BK-PX
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KTH-1000
Abstract: KTH-5017 KTH-2325 KTH-2025 KTH-5003 VDM230 KTH-2276 KTH-2258 KTH-5001 VPM2000TS
Text: 2065 Series Product Benefits BNC Connectors Full crimp design Designed for analog & digital cables Field Installable Meets or exceeds HDTV standards Mechanical Durability: Center Contact Retention: Coupling Mechanism: Force to Engage/Disengage: Interface Dimension:
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MIL-C-39012
5400Phone
5500Fax
KTH-1000
KTH-5017
KTH-2325
KTH-2025
KTH-5003
VDM230
KTH-2276
KTH-2258
KTH-5001
VPM2000TS
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fm25v05-g
Abstract: FM25V05 fm25v05g
Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM25V05
512Kb
FM25VN05)
FM25V05-G
FM25VN05-G
FM25V05-GTR
FM25VN05-GTR
FM25V05
fm25v05g
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rg5H20
Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
Text: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25H20
rg5H20
fm25h20-g
FM25H20-DG
FM25H20-GTR
FM25H20G
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NTE65101
Abstract: No abstract text available
Text: NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory SRAM Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention
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NTE65101
526-NTE65101
NTE65101
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c8051f902
Abstract: C8051F912 smbc 134DET mux88 C8051F32 C8051F912-GM cp1h 188SM C8051F90
Text: C8051F91x-C8051F90x Single/Dual Battery, 0.9–3.6 V, 16–8 kB, SmaRTClock, 12/10-Bit ADC MCU Ultra-Low Power - 160 uA/MHz in active mode 24.5 MHz clock - 2 us wake-up time (two-cell mode) - 10 nA sleep mode with memory retention; - 50 nA sleep mode with brownout detector
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C8051F91x-C8051F90x
12/10-Bit
F912/02
F911/01)
c8051f902
C8051F912
smbc
134DET
mux88
C8051F32
C8051F912-GM
cp1h
188SM
C8051F90
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MSP430
Abstract: cc cg1 100 278
Text: MSP430FG42x0 MIXED SIGNAL MICROCONTROLLER SLAS556A − JULY 2007 − REVISED AUGUST 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA
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MSP430FG42x0
SLAS556A
16-Bit
125-ns
12-Bit
MSP430
cc cg1 100 278
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MR25H10
Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range
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MR25H10
MR25H10
576-bit
M25H10
MR25H10C
M25H1
MR25H10CDC
MR25H10M
mr25h10mdc
MR25H10CDCR
MO-229
DFN 10 socket
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SPA02
Abstract: SPA04B SPA06 SPA08B SPA10
Text: SPA Series Single In-line Package Switches Features/Benefits • Thin Single In-line Packaging saves • • • PCB space Retention feature holds part to PCB prior to soldering Available in vertical or right angle models High pressure contact system does not require tape sealing
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SPA02AB
SPA04AB
SPA06AB
SPA08AB
SPA10AB
SPA02
SPA04B
SPA06
SPA08B
SPA10
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bq4010
Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
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bq4010/Y/LY
SLUS116A
28-Pin
536-bit
bq4010
bq4010LY
bq4010MA-150
bq4010MA-200
bq4010MA-70
bq4010MA-85
bq4010Y
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100-PIN
Abstract: ADC12 MSP430 MSP430F4618IPZ
Text: MSP430x461x1, MSP430x461x MIXED SIGNAL MICROCONTROLLER SLAS675 − OCTOBER 2009 D Low Supply Voltage Range: 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D − Active Mode: 400 µA at 1 MHz, 2.2 V − Standby Mode: 1.3 µA − Off Mode RAM Retention : 0.22 µA
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MSP430x461x1,
MSP430x461x
SLAS675
16-Bit
125-ns
12-Bit
MSP430x461x
100-PIN
ADC12
MSP430
MSP430F4618IPZ
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XM28C010P
Abstract: No abstract text available
Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times
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XM28C010P
--150ns,
120ns,
Size--64
XM28C010P
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ICS5311
Abstract: ICODE SLI-S
Text: NXP ICODE SLI-SY HF RFID smart label IC When long-term data integrity and tailored security counts National archives, university libraries and museums need an identification solution that will last for decades. Offering a guaranteed 40 years data retention, NXPs’ ICODE SLI-SY answers
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ICS5311
FCS5311
ICS5311
ICODE SLI-S
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ru 94v0
Abstract: ru 94v-0
Text: Catalog 130/767 Issued 11-99 Top Load Battery Connector Features: • Accepts all CR2032 lithium ion batteries ■ Self-ejecting design allow s battery to be removed with out tools IfHp ■ Superior retention to pc board or to battery ■ Cost effective
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CR2032
ru 94v0
ru 94v-0
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UM614256
Abstract: HC 3102
Text: UM614256 Seríes 2 5 6 K X 4 , 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply 3.3V I/O compatible All inputs and outputs directly TTL com patible Comm on I/O using three-state output Data retention voltage: 3V min. Available in 28-pin SOJ package
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UM614256
150mA
28-pin
576-bit
UM614256S-15
UM614256S-20
28LSOJ
HC 3102
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Untitled
Abstract: No abstract text available
Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
256Kx
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Untitled
Abstract: No abstract text available
Text: Electronics Standard Edge II Card Edge Connectors Solder Type Board-to-Board Connectors .100 [2.54] Centerline Vertical Solder Posts, Retention Feature, Without Mounting Ears M a te ria l and F in is h : .064 [1.63] Sq. X .130 [3.301 Dp. — Intercontact Key Slot
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Untitled
Abstract: No abstract text available
Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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bq4010/bq401
bq4010
536-bit
bq4010YMA-70N
bq4010-70
bq4010/bq4010Y
bq401Q
150ns
200ns
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