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Text: MUN5233T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.200
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MUN5233T1
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Text: 2SC3653 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3653
Freq250MÃ
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Text: MUN5214T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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MUN5214T1
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Text: IMH10A Transistors Pre-Biased "Digital" Transistor No. of Units Per Package2 V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m
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IMH10A
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Text: 2SA1345 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SA1345
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Text: 2SC4049 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.70 h(FE) Max. Current gain.
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2SC4049
Freq250M
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Text: MMUN2214LT1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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Text: MMUN2134LT1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.130
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Text: 2SC3395 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3395
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Text: MUN5134T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.130
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Text: MUN5234T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.150
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Text: 2SA1565 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.70 h(FE) Max. Current gain.
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2SA1565
Freq200M
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Text: MUN5213T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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Text: MUN5113T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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Text: 2SC3399 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3399
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Text: 2SC4146 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.70 h(FE) Max. Current gain.
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2SC4146
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Text: MUN5133T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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Text: MMUN2113LT1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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Text: MUN5114T1 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.80 h(FE) Max. Current gain.140
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